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    1005 NPN Search Results

    1005 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    1005 NPN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    power switching with IRFP450 schematic

    Abstract: POWER MOSFET CIRCUIT BJT, General electric Linear Application Note FET IRFP450 Avalanche
    Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN-1005 Power MOSFET Avalanche Design Guidelines TABLE OF CONTENTS Page Table of Figures. 2


    Original     		AN-1005 06-Dec-11 power switching with IRFP450 schematic POWER MOSFET CIRCUIT BJT, General electric Linear Application Note FET IRFP450 Avalanche PDF

    POWER MOSFET CIRCUIT

    Abstract: fuel injector mosfet automotive injector fuel injector test fuel injector driver FET injector MOSFET driver irfp*32n50k FET IRFP450 AN-1005 IRF7484
    Text: Application Note AN-1005 Power MOSFET Avalanche Design Guidelines By Tim McDonald, Marco Soldano, Anthony Murray, Teodor Avram Table of Contents Page Table of Figures .3 Introduction .4


    Original     		AN-1005 POWER MOSFET CIRCUIT fuel injector mosfet automotive injector fuel injector test fuel injector driver FET injector MOSFET driver irfp*32n50k FET IRFP450 AN-1005 IRF7484 PDF

    2SC5601

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5601 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin lead-less minimold package 1005 PKG


    Original     		2SC5601 2SC5601-T3 2SC5601 PDF

    09 06 248 6834

    Abstract: 2SC5616-T3 2SC5616
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5616 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE AMPLIFIER 3-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation, low phase distortion • Ideal for OSC applications • 3-pin lead-less minimold package 1005 PKG


    Original     		2SC5616 2SC5616-T3 09 06 248 6834 2SC5616-T3 2SC5616 PDF

    fuel injector mosfet

    Abstract: automotive injector fuel injector driver FET switching with IRFP450 schematic injector MOSFET driver INJECTOR POWER MOSFET CIRCUIT AN-1005 fuel injector test solenoid injector
    Text: AN-1005 Rev. 1.0 POWER MOSFET AVALANCHE DESIGN GUIDELINES Application Note Tim McDonald Marco Soldano Anthony Murray Teodor Avram Page 1 of 17 TABLE OF CONTENTS Table of Figures Introduction Overview Avalanche Mode Defined Avalanche Occurrences In Industry Applications


    Original     		AN-1005 fuel injector mosfet automotive injector fuel injector driver FET switching with IRFP450 schematic injector MOSFET driver INJECTOR POWER MOSFET CIRCUIT AN-1005 fuel injector test solenoid injector PDF

    5252 F 0911

    Abstract: 5252 F 1108 2SC5615-T3 2SC5615 5252 F 0906
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5615 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • 1005 package employed 1.0 x 0.5 × 0.5 mm • NF = 1.4 dB TYP., S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz


    Original     		2SC5615 S21e2 2SC5615-T3 5252 F 0911 5252 F 1108 2SC5615-T3 2SC5615 5252 F 0906 PDF

    5252 F 1108

    Abstract: 5252 F 1104 5252 F 1120 5252 F 1103 5252 F 1114 2SC5615 5252 F 1105 5252 F 0911 5252 1101 5252 F 1105 transistor
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5615 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • 1005 package employed 1.0 x 0.5 × 0.5 mm • NF = 1.4 dB TYP., S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz


    Original     		2SC5615 S21e2 2SC5615-T3 5252 F 1108 5252 F 1104 5252 F 1120 5252 F 1103 5252 F 1114 2SC5615 5252 F 1105 5252 F 0911 5252 1101 5252 F 1105 transistor PDF

    724G

    Abstract: No abstract text available
    Text: MLN1005-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN 1005-28S is a Common Emitter Device Designed for General Purpose Class A and AB Amplifier Applcations up to 1200 MHz. PACKAGE STYLE .280" 4L STUD A 45° C E B FEATURES INCLUDE: E B • Gold Metalization


    Original     		MLN1005-28S 1005-28S 724G PDF

    ASI1005

    Abstract: ASI10524
    Text: 1005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1005 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min at 5 W/ 1,000 MHz


    Original     		ASI1005 ASI1005 ASI10524 PDF

    5252 F 1108

    Abstract: 5252 F 1008 5252 F 1004
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5615 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • 1005 package employed 1.0 x 0.5 × 0.5 mm • NF = 1.4 dB TYP., S21e2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz


    Original     		2SC5615 S21e2 2SC5615 2SC5615-T3 5252 F 1108 5252 F 1008 5252 F 1004 PDF

    1005 NPN

    Abstract: ASI1005 ASI10524
    Text: 1005 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1005 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min at 5 W/ 1,000 MHz


    Original     		ASI1005 1005 NPN ASI1005 ASI10524 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1713-1005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)110 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)115 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Untitled

    Abstract: No abstract text available
    Text: 1718-1005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)100 I(C) Max. (A)10 Absolute Max. Power Diss. (W)33 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Untitled

    Abstract: No abstract text available
    Text: 1441-1005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)110 I(C) Max. (A)150 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		Freq500k PDF

    Untitled

    Abstract: No abstract text available
    Text: 1726-1005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)110 I(C) Max. (A)10 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		Freq40M PDF

    Untitled

    Abstract: No abstract text available
    Text: 1711-1005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)110 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		Freq60M PDF

    Untitled

    Abstract: No abstract text available
    Text: 1401-1005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)110 I(C) Max. (A)250 Absolute Max. Power Diss. (W)625 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		Freq500k eq500k PDF

    Untitled

    Abstract: No abstract text available
    Text: 1716-1005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)100 I(C) Max. (A)10 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		Freq40M req40M PDF

    Untitled

    Abstract: No abstract text available
    Text: 1714-1005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)110 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		Freq40M PDF

    Untitled

    Abstract: No abstract text available
    Text: 1717-1005 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)110 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)4.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		Freq60M PDF

    sd1005

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SD 1005 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 1005 is designed fo r audio frequency pow er a m p lifie r app lica tion, especially in H y b rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • W orld Standard M inia tu re Package


    OCR Scan     		2SD1005 2SB804 sd1005 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / SILICON TRANSISTOR / 1005 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 1005 is designed fo r audio frequency pow er am p lifie r app lication, especially in H y b rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS


    OCR Scan     		2SD1005 2SD1005 2SB804 PDF

    2SD1005

    Abstract: EL1202 2SB804 IEI-1213 DF RV transistor marking lp nec
    Text: DATA SHEET SILICON TRANSISTOR 2SD 1005 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 10 05 is designed for audio frequency power am plifier application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard M iniature Package


    OCR Scan     		2SD1005 2SB804 2SD1005 EL1202 2SB804 IEI-1213 DF RV transistor marking lp nec PDF

    NPN Transistor VCEO 1000V

    Abstract: CT7053 CT70 transistor VCEO 1000V Ct705 NPN VCEo 1000V transistor 1000V 1005 NPN 1000v, NPN c0210
    Text: WESTCODE SEMICONDUCTORS r - 33-/5" T T D n S S QQOaiSb T ITE D ADVANCE W ESTCODE SEMICONDUCTORS PUBLICATION CT 7053 Ib s iib I August 1005 NPN POWER TRA N SISTO R CT7BD3 notlnijs POWERSWITCH 1400 V O L T S 150 AMPHRES Past Switching Low Saturation Voltages


    OCR Scan     		GDD51Sb CT7053 545kflf 100kgf nT7053 SM16IJL NPN Transistor VCEO 1000V CT7053 CT70 transistor VCEO 1000V Ct705 NPN VCEo 1000V transistor 1000V 1005 NPN 1000v, NPN c0210 PDF