CM100RX-24A
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100RX-24A HIGH POWER SWITCHING USE CM100RX-24A ¡IC . 100A ¡VCES . 1200V ¡7pack 3-phase Inverter + Brake
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CM100RX-24A
CM100RX-24A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100RX-24A HIGH POWER SWITCHING USE CM100RX-24A ¡IC . 100A ¡VCES . 1200V ¡7pack 3-phase Inverter + Brake
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CM100RX-24A
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panasonic 2m236
Abstract: 2M236
Text: EJ AEJ High capacity DC cutoff 100A at 100V DC RoHS compliant EJ RELAYS (AEJ) FEATURES TYPICAL APPLICATIONS 1. Compact and high capacity using double contacts in series and permanent magnet installed. 1) Nominal switching capacity (resistive load): 100A 100V DC, Min. 104
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756inch
150inch
339inch
ASCTB117E
201202-T
panasonic 2m236
2M236
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Vn36
Abstract: CM100RX-24A
Text: MITSUBISHI IGBT MODULES CM100RX-24A HIGH POWER SWITCHING USE CM100RX-24A ¡IC . 100A ¡VCES . 1200V ¡7pack 3-phase Inverter + Brake
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CM100RX-24A
48K/W
Vn36
CM100RX-24A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100RX-12A HIGH POWER SWITCHING USE CM100RX-12A ¡IC . 100A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake
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CM100RX-12A
85K/W
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DIODE EVP 28
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100RX-12A HIGH POWER SWITCHING USE CM100RX-12A ¡IC . 100A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake
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CM100RX-12A
DIODE EVP 28
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DIODE T25
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100RX-12A HIGH POWER SWITCHING USE CM100RX-12A ¡IC . 100A ¡VCES . 600V ¡7pack 3-phase Inverter + Brake
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CM100RX-12A
85K/W
DIODE T25
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CM100DU-24NFH
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100DU-24NFH HIGH POWER SWITCHING USE CM100DU-24NFH ¡IC . 100A ¡VCES . 1200V ¡Insulated Type ¡2-elements in a pack
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CM100DU-24NFH
30kHz
60kHz)
CM100DU-24NFH
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CM100DY-34A
Abstract: igbt 1000v 100a
Text: MITSUBISHI IGBT MODULES CM100DY-34A HIGH POWER SWITCHING USE CM100DY-34A ¡IC . 100A ¡VCES . 1700V ¡Insulated Type ¡2-elements in a pack
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CM100DY-34A
13K/W
CM100DY-34A
igbt 1000v 100a
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"MOSFET Module"
Abstract: E80276 FM200TU-2A
Text: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated
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FM200TU-2A
E80276
E80271
"MOSFET Module"
E80276
FM200TU-2A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100TU-24F HIGH POWER SWITCHING USE CM100TU-24F ¡IC . 100A ¡VCES . 1200V ¡Insulated Type ¡6-elements in a pack
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CM100TU-24F
measure101
25K/W
35K/W
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100DU-24F HIGH POWER SWITCHING USE CM100DU-24F ¡IC . 100A ¡VCES . 1200V ¡Insulated Type ¡2-elements in a pack
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CM100DU-24F
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <MOSFET MODULE> FM200TU-3A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-3A ● ID rms . 100A ● VDSS . 150V ● Insulated
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FM200TU-3A
E80276
E80271
30K/W
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CM100DU-12H
Abstract: C2E1
Text: MITSUBISHI IGBT MODULES CM100DU-12H HIGH POWER SWITCHING USE INSULATED TYPE CM100DU-12H ● IC . 100A ● VCES . 600V ● Insulated Type
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CM100DU-12H
CM100DU-12H
C2E1
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CM100TU-24F
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100TU-24F HIGH POWER SWITCHING USE CM100TU-24F ¡IC . 100A ¡VCES . 1200V ¡Insulated Type ¡6-elements in a pack
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CM100TU-24F
CM100TU-24F
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100DU-12F HIGH POWER SWITCHING USE CM100DU-12F ¡IC . 100A ¡VCES . 600V ¡Insulated Type ¡2-elements in a pack
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CM100DU-12F
35K/W
70K/W
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated
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FM200TU-2A
E323585
March-2013
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100TU-24H HIGH POWER SWITCHING USE INSULATED TYPE CM100TU-24H ● IC . 100A ● VCES . 1200V ● Insulated Type
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CM100TU-24H
E80276
E80271
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SIDC73D170E6
Abstract: No abstract text available
Text: SIDC73D170E6 Fast switching diode chip in Emitter Controlled -Technology Features: • 1700V technology, Emitter Controlled • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type SIDC73 D170E6 VR IF 1700V 100A
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SIDC73D170E6
SIDC73
D170E6
L4381N,
SIDC73D170E6
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CM100RL-24NF
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100RL-24NF HIGH POWER SWITCHING USE CM100RL-24NF ¡IC . 100A ¡VCES . 1200V ¡Insulated Type ¡7-elements in a pack
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CM100RL-24NF
CM100RL-24NF
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CM100DY-24A
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100DY-24A HIGH POWER SWITCHING USE CM100DY-24A ¡IC . 100A ¡VCES . 1200V ¡Insulated Type ¡2-elements in a pack
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CM100DY-24A
CM100DY-24A
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CM100TU-24F
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100TU-24F HIGH POWER SWITCHING USE CM100TU-24F ¡IC . 100A ¡VCES . 1200V ¡Insulated Type ¡6-elements in a pack
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CM100TU-24F
CM100TU-24F
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CM100E3U-12F
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100E3U-12F HIGH POWER SWITCHING USE CM100E3U-12F ¡IC . 100A ¡VCES . 600V ¡Insulated Type ¡1-element in a pack
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CM100E3U-12F
CM100E3U-12F
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CM100E3U-24F
Abstract: No abstract text available
Text: MITSUBISHI IGBT MODULES CM100E3U-24F HIGH POWER SWITCHING USE CM100E3U-24F ¡IC . 100A ¡VCES . 1200V ¡Insulated Type ¡1-element in a pack
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CM100E3U-24F
CM100E3U-24F
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