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    Kyocera AVX Components 100A8R2JT150XT

    CAP CER 8.2PF 150V P90 0505
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    DigiKey 100A8R2JT150XT Reel 24,500 500
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    100A8R2JT150XT Cut Tape 24,500 1
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    100A8R2JT150XT Digi-Reel 24,500 1
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    Mouser Electronics 100A8R2JT150XT 547
    • 1 $2.28
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    TTI 100A8R2JT150XT Reel 500
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    Kyocera AVX Components 100A8R2CT150XT1K

    CAP CER 8.2PF 150V P90 0505
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    DigiKey 100A8R2CT150XT1K Digi-Reel 18,617 1
    • 1 $2.77
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    100A8R2CT150XT1K Cut Tape 18,617 1
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    100A8R2CT150XT1K Reel 15,000 1,000
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    Mouser Electronics 100A8R2CT150XT1K 1,996
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    Panduit Corp C400X100A8T

    LABEL PANEL RAISED
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    DigiKey C400X100A8T Bulk 874 1
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    Master Electronics C400X100A8T 400
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    Kyocera AVX Components 100A8R2BT150XT1K

    CAP CER 8.2PF 150V P90 0505
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    DigiKey 100A8R2BT150XT1K Digi-Reel 499 1
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    100A8R2BT150XT1K Cut Tape 499 1
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    Mouser Electronics 100A8R2BT150XT1K
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    KEMET Corporation C4DENPQ6100A8TK

    CAP FILM 100UF 10% 1KVDC RADIAL
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    DigiKey C4DENPQ6100A8TK Bulk 487 1
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    Newark C4DENPQ6100A8TK Bulk 50 1
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    TME C4DENPQ6100A8TK 60
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    Avnet Abacus C4DENPQ6100A8TK 12 30 Weeks 12
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    100A8 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    100A820JW150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 82PF 150V P90 0505 Original PDF
    100A8R2BT150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 8.2PF 150V P90 0505 Original PDF
    100A8R2BT150XT1K American Technical Ceramics Ceramic Capacitor 8.2PF 150V P90 0505 Original PDF
    100A8R2BW150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 8.2PF 150V P90 0505 Original PDF
    100A8R2BW150XT1K American Technical Ceramics Ceramic Capacitor 8.2PF 150V P90 0505 Original PDF
    100A8R2CT150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 8.2PF 150V P90 0505 Original PDF
    100A8R2CT150XT1K American Technical Ceramics Ceramic Capacitor 8.2PF 150V P90 0505 Original PDF
    100A8R2CW150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 8.2PF 150V P90 0505 Original PDF
    100A8R2CW150XT1K American Technical Ceramics Ceramic Capacitor 8.2PF 150V P90 0505 Original PDF
    100A8R2JT150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 8.2PF 150V P90 0505 Original PDF
    100A8R2JT150XT1K American Technical Ceramics Ceramic Capacitor 8.2PF 150V P90 0505 Original PDF
    100A8R2JW150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 8.2PF 150V P90 0505 Original PDF
    100A8R2JW150XT1K American Technical Ceramics Ceramic Capacitor 8.2PF 150V P90 0505 Original PDF

    100A8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AGR09030GUM

    Abstract: JESD22-C101A RF35
    Text: Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09030GUM Hz--895 AGR09030GUM DS04-246RFPP PB04-094RFPP) JESD22-C101A RF35

    C1206C104KRAC7800

    Abstract: 100b6r8 AGR09045E AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW
    Text: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09045E Hz--895 AGR09045E DS04-295RFPP DS04-198RFPP) C1206C104KRAC7800 100b6r8 AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW

    J293

    Abstract: 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125E AGR18125EF AGR18125EU JESD22-C101A
    Text: Product Brief AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor


    Original     		PDF AGR18125E AGR18125E AGR18125EF AGR18125XF M-AGR21125F 12-digit J293 100A470JW RM73B2B100J Transistor Z17 100B100JW AGR18125EF AGR18125EU JESD22-C101A

    MSP 34100

    Abstract: MSP 34100 C5 LC1 DB25 B7 inverter ABB ACS 150 pcb connector 4 pin push button dp 20 Wiring Diagram cpu 315-2 dp siemens MARKING DIAGRAMS sob 214 motorola bts hm1 MSP 34106 BT 342 project
    Text: MSC8103 Reference Manual 16-Bit Digital Signal Processor MSC8103RM/D Revision 0, June 2003 HOW TO REACH US: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution P.O. Box 5405 Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.


    Original     		PDF MSC8103 16-Bit MSC8103RM/D Index-36 SC140/CPM Index-37 Index-38 MSP 34100 MSP 34100 C5 LC1 DB25 B7 inverter ABB ACS 150 pcb connector 4 pin push button dp 20 Wiring Diagram cpu 315-2 dp siemens MARKING DIAGRAMS sob 214 motorola bts hm1 MSP 34106 BT 342 project

    motorola bts hm1

    Abstract: CD 2025 HCP power generation POWER COMMAND HM 1211 GSM jamming scheme generator RBS 3518 ABB inverter motor fault code ACS 401 stp420 diagram LG LCD TV circuits dna 1002c DSP56300
    Text: MSC8101 Reference Manual 16-Bit Digital Signal Processor MSC8101RM/D Revision 2, May 2002 HOW TO REACH US: Information in this document is provided solely to enable system and software implementers to use USA/EUROPE/LOCATIONS NOT LISTED: Motorola products. There are no express or implied copyright licenses granted hereunder to design


    Original     		PDF MSC8101 16-Bit MSC8101RM/D SC140/CPM Index-36 motorola bts hm1 CD 2025 HCP power generation POWER COMMAND HM 1211 GSM jamming scheme generator RBS 3518 ABB inverter motor fault code ACS 401 stp420 diagram LG LCD TV circuits dna 1002c DSP56300

    PM7520

    Abstract: RESISTOR CR25 RESISTOR pr37 RESISTOR CR25 philips CR25 resistor PM3260 HP8620 PR37 RESISTOR blw32 s parameter philips resistor CR25
    Text: APPLICATION NOTE Wide-band linear power amplifiers 470 − 860 MHz with the transistors BLW32 and BLW33 ECO7806 Philips Semiconductors Wide-band linear power amplifiers (470 − 860 MHz) with the transistors BLW32 and BLW33 CONTENTS 1 ABSTRACT 2 INTRODUCTION


    Original     		PDF BLW32 BLW33 ECO7806 PM7520 RESISTOR CR25 RESISTOR pr37 RESISTOR CR25 philips CR25 resistor PM3260 HP8620 PR37 RESISTOR blw32 s parameter philips resistor CR25

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		PDF AGR09090EF Hz--960 DS04-134RFPP DS04-068RFPP)

    bcm 4330

    Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
    Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?


    Original     		PDF

    AGR09045E

    Abstract: AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J
    Text: Preliminary Data Sheet October 2004 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09045E Hz--895 AGR09045E package9-9138 DS04-295RFPP DS04-198RFPP) AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J

    linear amplifier 470-860

    Abstract: PM3260 BLW34 HP8620C HP86222A an blw32 33 RESISTOR pr37 PR37 RESISTOR HP8558B enamelled copper wire tables
    Text: APPLICATION NOTE A wide-band linear power amplifier 470 − 860 MHz with two transistors BLW34 ECO7901 Philips Semiconductors A wide-band linear power amplifier (470 − 860 MHz) with two transistors BLW34 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 THEORETICAL CONSIDERATIONS


    Original     		PDF BLW34 ECO7901 SCA57 linear amplifier 470-860 PM3260 BLW34 HP8620C HP86222A an blw32 33 RESISTOR pr37 PR37 RESISTOR HP8558B enamelled copper wire tables

    J107-2

    Abstract: 100A0R5BW 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM A113 A114 A115 AN1955 AN1987 C101 JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MHV5IC1810N Rev. 0, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHV5IC1810N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage


    Original     		PDF MHV5IC1810N MHV5IC1810N MHV5IC1810NR2 J107-2 100A0R5BW 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM A113 A114 A115 AN1955 AN1987 C101 JESD22

    transistor j210

    Abstract: 100B1R0BW J283 AGR09030E AGR09030EF AGR09030EU JESD22-C101A RM73B2B C1206C104KRAC7800 c.d.m. technology acp
    Text: AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09030E Hz--895 AGR09030E AGR09030EU AGR09030EF transistor j210 100B1R0BW J283 AGR09030EF AGR09030EU JESD22-C101A RM73B2B C1206C104KRAC7800 c.d.m. technology acp

    AGR09090EF

    Abstract: JESD22-C101A ZX18 grm40x7r103k100al
    Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		PDF AGR09090EF Hz--960 AGR09090EF DS04-153RFPP DS04-134RFPP) JESD22-C101A ZX18 grm40x7r103k100al

    100B100JW500X

    Abstract: No abstract text available
    Text: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		PDF AGR09090EF Hz--960 Hz--895 DS04-134RFPP DS04-068RFPP) 100B100JW500X

    j0947

    Abstract: AGR09090EF JESD22-C101A ZX18 ZO 109 wa 100B100JW500X
    Text: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution


    Original     		PDF AGR09090EF Hz--960 AGR09090EF Typic14 Hz--895 j0947 JESD22-C101A ZX18 ZO 109 wa 100B100JW500X

    powerful listening bug abstract

    Abstract: powerful listening bug XAPP1137 ML507 PPC440 powerpc 464 GPR16 buggy 5156k 871265
    Text: Application Note: Embedded Processing R XAPP1137 v1.0 June 9, 2009 Linux Operating System Software Debugging Techniques with Xilinx Embedded Development Platforms Author: Brian Hill Abstract This application note discusses Linux Operating System debugging techniques. Debugging


    Original     		PDF XAPP1137 ML507 powerful listening bug abstract powerful listening bug XAPP1137 PPC440 powerpc 464 GPR16 buggy 5156k 871265

    RK73H2A10R0F

    Abstract: AGR09060GUM JESD22-C101A RF35 RM73B2B103J
    Text: Preliminary Data Sheet July 2004 AGR09060GUM 60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09060GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09060GUM Hz--895 AGR09060GUM m8109-9138 DS04-219RFPP PB04-073RFPP) RK73H2A10R0F JESD22-C101A RF35 RM73B2B103J

    transistor j210

    Abstract: AGR09030E JESD22-C101A AGR09030EF AGR09030EU agere c8 c1 TOWA
    Text: Preliminary Data Sheet November 2004 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09030E Hz--895 AGR09030E packag-9138 DS04-294RFPP DS04-197RFPP) transistor j210 JESD22-C101A AGR09030EF AGR09030EU agere c8 c1 TOWA

    AGR09045E

    Abstract: AGR09045EF AGR09045EU JESD22-C101A cdm 316 j0101 J0316 grm40x7r103k100al RM73B2B103J
    Text: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09045E Hz--895 AGR09045E AGR09045EU AGR09045EF AGR09045EF AGR09045EU JESD22-C101A cdm 316 j0101 J0316 grm40x7r103k100al RM73B2B103J