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    Kyocera AVX Components 100B220JT500XT1K

    CAP CER 22PF 500V P90 1111
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    DigiKey 100B220JT500XT1K Digi-Reel 2,662 1
    • 1 $7.99
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    100B220JT500XT1K Cut Tape 2,662 1
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    Richardson RFPD 100B220JT500XT1K 1,000 1,000
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    Kyocera AVX Components 100B220GT500XT1K

    CAP CER 22PF 500V P90 1111
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    DigiKey 100B220GT500XT1K Digi-Reel 2,050 1
    • 1 $6.46
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    Kyocera AVX Components 100B220GTN500XT1K

    CAP CER 22PF 500V P90 1111
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    DigiKey 100B220GTN500XT1K Digi-Reel 208 1
    • 1 $7.82
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    100B220GTN500XT1K Cut Tape 208 1
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    Kyocera AVX Components 100B220JTN500XT1K

    CAP CER 22PF 500V P90 1111
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    DigiKey 100B220JTN500XT1K Cut Tape 87 1
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    100B220JTN500XT1K Digi-Reel 87 1
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    TE Connectivity TE100B220RJ

    RES CHAS MNT 220 OHM 5% 100W
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    DigiKey TE100B220RJ Box 10
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    100B220 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    100B220FW500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 22PF 500V P90 1111 Original PDF
    100B220FW500XT1K American Technical Ceramics Ceramic Capacitor 22PF 500V P90 1111 Original PDF
    100B220GT500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 22PF 500V P90 1111 Original PDF
    100B220GT500XT1K American Technical Ceramics Ceramic Capacitor 22PF 500V P90 1111 Original PDF
    100B220GTN500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 22PF 500V P90 1111 Original PDF
    100B220GTN500XT1K American Technical Ceramics Ceramic Capacitor 22PF 500V P90 1111 Original PDF
    100B220JP500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 22PF 500V P90 1111 Original PDF
    100B220JP500XT1K American Technical Ceramics Ceramic Capacitor 22PF 500V P90 1111 Original PDF
    100B220JT500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 22PF 500V P90 1111 Original PDF
    100B220JT500XT1K American Technical Ceramics Ceramic Capacitor 22PF 500V P90 1111 Original PDF
    100B220JTN500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 22PF 500V P90 1111 Original PDF
    100B220JTN500XT1K American Technical Ceramics Ceramic Capacitor 22PF 500V P90 1111 Original PDF
    100B220JW500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 22PF 500V P90 1111 Original PDF
    100B220JW500XT1K American Technical Ceramics Ceramic Capacitor 22PF 500V P90 1111 Original PDF

    100B220 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−


    Original     		PDF MRF9080 MRF9080LR3 MRF9080LSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these


    Original     		PDF MRF9100 MRF9100R3 MRF9100SR3 MRF9100R3

    Untitled

    Abstract: No abstract text available
    Text: MW4IC915 Freescale Semiconductor Rev. 6, 5/2006 Replaced by MW4IC915NBR1 GNBR1 . There are no form, fit or function changes with this part Technical Data replacement. N suffix added to part number to indicate transition to lead - free terminations. ARCHIVE INFORMATION


    Original     		PDF MW4IC915 MW4IC915NBR1 MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1

    Untitled

    Abstract: No abstract text available
    Text: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1

    C8450

    Abstract: MRF5S4140H
    Text: Document Number: MRF5S4140H Rev. 1, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these


    Original     		PDF MRF5S4140H 28-volt MRF5S4140HR3 MRF5S4140HSR3 MRF5S4140H C8450

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S19100LR3 and MRF5S19100LSR3 replaced by MRF5S19100HR3 and MRF5S19100HSR3. “H” suffix indicates lower thermal resistance package. The RF MOSFET Line


    Original     		PDF MRF5S19100L/D MRF5S19100LR3 MRF5S19100LSR3 MRF5S19100HR3 MRF5S19100HSR3. MRF5S19100LR3 MRF5S19100LSR3

    Untitled

    Abstract: No abstract text available
    Text: MRF5S19090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF5S19090H MRF5S19090HR3 MRF5S19090HSR3

    marking WB1 sot-23

    Abstract: marking WB2 sot-23 transistor WB1
    Text: Document Number: MRF9080 Rev. 7, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common-source


    Original     		PDF MRF9080 MRF9080LSR3 marking WB1 sot-23 marking WB2 sot-23 transistor WB1

    NIPPON CAPACITORS

    Abstract: 224 J
    Text: LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS Inverter-use screw terminal, 85C RWY @High ripple capability @Endurance with ripple current : 85C 5000 hours @Wide variety case sizes from F50 to F100 low price version RWF RWE longer life ?SPECIFICATIONS


    Original     		PDF 450Vdc 120Hz) E1001A NIPPON CAPACITORS 224 J

    mosfet 1412

    Abstract: No abstract text available
    Text: Draft Copy Only Preliminary Data Sheet September 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09090EF Hz--960 DS03-202RFPP mosfet 1412

    0805 capacitor 10 pf

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.


    Original     		PDF MRF9080LR3 MRF9080LSR3 0805 capacitor 10 pf

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 3, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF5S19100HR3 MRF5S19100HSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 4, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts LDMOS IC technology and integrates a multi - stage


    Original     		PDF MW4IC915MB/GMB MW4IC915MBR1 MW4IC915GMBR1

    UHF TRANSISTOR

    Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet
    Text: The innovative Semiconductor Company! HVV0405-175 HIGH VOLTAGE, HIGH RUGGEDNESS UHF Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV0405-175 429-HVVi EG-01-DS10B 05/XX/09 UHF TRANSISTOR J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet October 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09070EF Hz--960 AGR09070EF DS04-007RFPP DS03-059RFPP)

    MRF9080LSR3

    Abstract: 293D106X9035D2T MRF9080LR3 100B0R8BW Micron Semiconductor C1522
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9080/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9080LR3 MRF9080LSR3 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs


    Original     		PDF MRF9080/D MRF9080LR3 MRF9080LSR3 MRF9080LR3 MRF9080LSR3 293D106X9035D2T 100B0R8BW Micron Semiconductor C1522

    ATC capacitor 100b

    Abstract: MRF9130LR3 MRF9130L MRF9130LSR3 irl130
    Text: MOTOROLA Order this document by MRF9130L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF9130L/D MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130L MRF9130LR3 ATC capacitor 100b MRF9130LSR3 irl130

    AN1955

    Abstract: MRF5S19100HR3 MRF5S19100HSR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S19100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19100HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S19100HSR3


    Original     		PDF MRF5S19100H/D MRF5S19100HR3 MRF5S19100HSR3 MRF5S19100HR3 AN1955 MRF5S19100HSR3

    NIPPON CAPACITORS

    Abstract: 25B16 8B10 F100
    Text: LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS Inverter-use screw terminal, 85C RWY @High ripple capability @Endurance with ripple current : 85C 5000 hours @Cost-down design for three-phase input inverters low price version RWF ?SPECIFICATIONS Items Category


    Original     		PDF 450Vdc 120Hz) 100b220 100b270 E1001B NIPPON CAPACITORS 25B16 8B10 F100

    100B100JW500X

    Abstract: AGR09090EF JESD22-C101A
    Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced


    Original     		PDF AGR09090EF Hz--960 AGR09090EF DS04-058RFPP DS04-029RFPP) 100B100JW500X JESD22-C101A

    CDR33BX104AKWS

    Abstract: MRF5S19100LR3 MRF5S19100LSR3
    Text: MOTOROLA Order this document by MRF5S19100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S19100LR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies up to


    Original     		PDF MRF5S19100L/D MRF5S19100LR3 MRF5S19100LR3 MRF5S19100LSR3 CDR33BX104AKWS MRF5S19100LSR3

    J0743

    Abstract: MRF5S4140H j0810 100B121JP500X A114 A115 AN1955 C101 JESD22 MRF5S4140HR3
    Text: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these


    Original     		PDF MRF5S4140H MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 J0743 MRF5S4140H j0810 100B121JP500X A114 A115 AN1955 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: LARGE CAPACITANCE ALUMINUM ELECTROLYTIC CAPACITORS Inverter-use screw terminal, 85C RWY @High ripple capability @Endurance with ripple current : 85C 5000 hours @Cost-down design for three-phase input inverters low price version RWF ?SPECIFICATIONS Items Category


    Original     		PDF 450Vdc 120Hz) 100b220 100b270 E1001D