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Kyocera AVX Components 100B330JW500XT1K CAP CER 33PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B330JW500XT1K	Digi-Reel	4,575		1	1 $6.73 10 $4.607 100 $3.48 1000 $3.0216 10000 $3.0216	Buy Now
	100B330JW500XT1K	Cut Tape	4,575		1	1 $6.73 10 $4.607 100 $3.48 1000 $3.0216 10000 $3.0216	Buy Now
	100B330JW500XT1K	Reel	3,000		1,000	1 - 10 - 100 - 1000 $2.59834 10000 $2.59834	Buy Now
Avnet Americas	100B330JW500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B330JW500XT1K					1 - 10 - 100 - 1000 $2.95 10000 $2.95	Get Quote
Richardson RFPD	100B330JW500XT1K				1,000	1 - 10 - 100 - 1000 $3.25 10000 $2.75	Buy Now
Kyocera AVX Components 100B330JWN500XC100 MLC A/B/R - Waffle Pack (Alt: 100B330JWN500XC100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B330JWN500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B330JWN500XC100					1 $7.51 10 $6.51 100 $5 1000 $4.25 10000 $4.25	Get Quote
Richardson RFPD	100B330JWN500XC100				100	1 - 10 - 100 $4.16 1000 $3.74 10000 $3.16	Buy Now
Kyocera AVX Components 100B330JW500XC100 MLC A/B/R - Waffle Pack (Alt: 100B330JW500XC100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B330JW500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B330JW500XC100					1 $6.53 10 $5.66 100 $4.35 1000 $3.69 10000 $3.62	Get Quote
Richardson RFPD	100B330JW500XC100		835		100	1 - 10 - 100 $3.51 1000 $3.18 10000 $2.69	Buy Now
Kyocera AVX Components 100B330JW500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B330JW500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B330JW500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B330JW500XT		422			1 $5.99 10 $5.2 100 $4.05 1000 $3.29 10000 $3.29	Buy Now
TTI	100B330JW500XT	Reel			500	1 - 10 - 100 - 1000 $3.26 10000 $3.26	Buy Now
Richardson RFPD	100B330JW500XT				500	1 - 10 - 100 - 1000 $3.25 10000 $2.75	Buy Now
Kyocera AVX Components 100B330JWN500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B330JWN500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B330JWN500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B330JWN500XT					1 - 10 - 100 - 1000 $4.46 10000 $4.46	Get Quote

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100B330JW Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
100B330JW500XT		American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 33PF 500V P90 1111		Original	PDF
100B330JW500XT1K		American Technical Ceramics	Ceramic Capacitor 33PF 500V P90 1111		Original	PDF

100B330JW Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	MRF9100 MRF9100R3 MRF9100SR3 MRF9100R3	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1	PDF
Untitled Abstract: No abstract text available Text: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1	PDF
PTFB090901EA Abstract: No abstract text available Text: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced	Original	PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2	PDF
PTFB090901 Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801 Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PTFB090901EA PTFB090901FA PTFB090901FA 90-watt H-36265-2 H-37265-2 PTFB090901 TL127 569w 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801	PDF
ATC capacitor 100b Abstract: MRF9130LR3 MRF9130L MRF9130LSR3 irl130 Text: MOTOROLA Order this document by MRF9130L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	MRF9130L/D MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130L MRF9130LR3 ATC capacitor 100b MRF9130LSR3 irl130	PDF
marking Z4 Abstract: A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1 Text: Freescale Semiconductor Technical Data Document Number: MRF5S9101 Rev. 2, 7/2005 RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 marking Z4 A114 A115 AN1955 C101 JESD22 MRF5S9101 MRF5S9101MBR1	PDF
PTFB090901EA Abstract: No abstract text available Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9100 Rev. 4, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100LR3 MRF9100LSR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	MRF9100 MRF9100LR3 MRF9100LSR3 MRF9100	PDF
Transistor J182 Abstract: MRF9100 MRF9100R3 MRF9100SR3 08053G105ZATEA Text: MOTOROLA Order this document by MRF9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF9100 MRF9100R3 MRF9100SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies	Original	MRF9100/D MRF9100 MRF9100R3 MRF9100SR3 MRF9100 MRF9100R3 Transistor J182 MRF9100SR3 08053G105ZATEA	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9130L Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance	Original	MRF9130L MRF9130LR3 MRF9130LSR3	PDF
J182 transistor Abstract: J152 mosfet transistor MRF9100 MRF9100R3 MRF9100SR3 Transistor J182 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9100/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF9100R3 MRF9100SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies	Original	MRF9100/D MRF9100R3 MRF9100SR3 MRF9100R3 J182 transistor J152 mosfet transistor MRF9100 MRF9100SR3 Transistor J182	PDF
100B220GW Abstract: 100B100GW Text: Freescale Semiconductor Technical Data Rev. 3, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	MRF9100R3 MRF9100SR3 100B220GW 100B100GW	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF5S9101/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF5S9101NR1 RF Power Field Effect Transistors MRF5S9101NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101MR1 Designed for GSM and GSM EDGE base station applications with	Original	MRF5S9101/D MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MBR1	PDF

Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance	Original	MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130LR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9130L Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance	Original	MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130LR3	PDF
100B330JW Abstract: MRF910 marking Z3 6-pin Text: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	MRF9100 MRF9100R3 MRF9100SR3 100B330JW MRF910 marking Z3 6-pin	PDF
capacitor 2220 Abstract: 200B A113 AN1955 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1 MRF5S9101NR1 murata 897 Mhz Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S9101/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Freescale Semiconductor, Inc. MRF5S9101NR1 RF Power Field Effect Transistors MRF5S9101NBR1 N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101MR1	Original	MRF5S9101/D MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 capacitor 2220 200B A113 AN1955 MRF5S9101MBR1 murata 897 Mhz	PDF
MRF9100L Abstract: MRF9100LSR3 marking c14 MRF9100 MRF9100LR Text: Freescale Semiconductor Technical Data Document Number: MRF9100 Rev. 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100LR3 MRF9100LSR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	MRF9100 MRF9100LR3 MRF9100LSR3 MRF9100LR3 MRF9100L MRF9100LSR3 marking c14 MRF9100 MRF9100LR	PDF
"RF power MOSFETs" Abstract: marking Z4 MRF9130LR3 MRF9130L MRF9130LSR3 chip resistor 1206 Text: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance	Original	MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130LR3 "RF power MOSFETs" marking Z4 MRF9130L MRF9130LSR3 chip resistor 1206	PDF
200B103MW Abstract: 100B5R6CW Text: Freescale Semiconductor Technical Data Rev. 1, 1/2005 RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier	Original	MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 200B103MW 100B5R6CW	PDF
100B330JW Abstract: chip resistors 0805 philips MRF9100 esd z10 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF9100 MRF9100R3 MRF9100SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	MRF9100 MRF9100R3 MRF9100SR3 100B330JW chip resistors 0805 philips esd z10	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF5S9101N Rev. 4, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9101NR1 MRF5S9101NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier	Original	MRF5S9101N MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101NR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9100 Rev. 5, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9100LR3 MRF9100LSR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	MRF9100 MRF9100LR3 MRF9100LSR3 MRF9100LR3	PDF

100B330JW Search Results

100B330JW Price and Stock

Kyocera AVX Components 100B330JW500XT1K

Kyocera AVX Components 100B330JWN500XC100

Kyocera AVX Components 100B330JW500XC100

Kyocera AVX Components 100B330JW500XT

Kyocera AVX Components 100B330JWN500XT

100B330JW Datasheets (2)

100B330JW Datasheets Context Search

Untitled

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PTFB090901EA

PTFB090901

ATC capacitor 100b

marking Z4

PTFB090901EA

Untitled

Transistor J182

Untitled

J182 transistor

100B220GW

Untitled

Untitled

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100B330JW

capacitor 2220

MRF9100L

"RF power MOSFETs"

200B103MW

100B330JW

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