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Kyocera AVX Components 100B3R3BW500XT1K CAP CER 3.3PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B3R3BW500XT1K	Digi-Reel	1,500		1	1 $9.17 10 $6.399 100 $4.922 1000 $4.32094 10000 $4.32094	Buy Now
	100B3R3BW500XT1K	Cut Tape	1,500		1	1 $9.17 10 $6.399 100 $4.922 1000 $4.32094 10000 $4.32094	Buy Now
	100B3R3BW500XT1K	Reel	1,000		1,000	1 - 10 - 100 - 1000 $4.13281 10000 $3.97695	Buy Now
Avnet Americas	100B3R3BW500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B3R3BW500XT1K					1 - 10 - 100 - 1000 $3.97 10000 $3.97	Get Quote
Richardson RFPD	100B3R3BW500XT1K		1,000		1,000	1 - 10 - 100 - 1000 $2.54 10000 $2.38	Buy Now
Kyocera AVX Components 100B3R3BW500XC100 MLC A/B/R - Waffle Pack (Alt: 100B3R3BW500XC100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B3R3BW500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B3R3BW500XC100					1 $6.85 10 $5.94 100 $4.76 1000 $4.31 10000 $4.31	Get Quote
TTI	100B3R3BW500XC100	WAFL			100	1 - 10 - 100 $4.53 1000 $4.22 10000 $4.22	Buy Now
Richardson RFPD	100B3R3BW500XC100		8		100	1 - 10 - 100 $3.68 1000 $2.48 10000 $2.32	Buy Now
Kyocera AVX Components 100B3R3BWN500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B3R3BWN500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B3R3BWN500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B3R3BWN500XT					1 - 10 - 100 - 1000 $4.28 10000 $4.28	Get Quote
Kyocera AVX Components 100B3R3BWN1500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B3R3BWN1500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B3R3BWN1500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B3R3BWN1500XT					1 - 10 - 100 - 1000 $4.28 10000 $4.28	Get Quote
Kyocera AVX Components 100B3R3BW500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B3R3BW500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B3R3BW500XT	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B3R3BW500XT		60			1 $5.28 10 $4.55 100 $4.52 1000 $3.83 10000 $3.83	Buy Now
TTI	100B3R3BW500XT	Reel			500	1 - 10 - 100 - 1000 $3.61 10000 $3.61	Buy Now
Richardson RFPD	100B3R3BW500XT				500	1 - 10 - 100 - 1000 $2.54 10000 $2.38	Buy Now

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100B3R3BW Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
100B3R3BW500XT		American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 3.3PF 500V P90 1111		Original	PDF
100B3R3BW500XT1K		American Technical Ceramics	Ceramic Capacitor 3.3PF 500V P90 1111		Original	PDF

100B3R3BW Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
C1206C104KRAC7800 Abstract: 100b6r8 AGR09045E AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW Text: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09045E Hz--895 AGR09045E DS04-295RFPP DS04-198RFPP) C1206C104KRAC7800 100b6r8 AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW	PDF
ATC capacitor 100b Abstract: MRF9130LR3 MRF9130L MRF9130LSR3 irl130 Text: MOTOROLA Order this document by MRF9130L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	MRF9130L/D MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130L MRF9130LR3 ATC capacitor 100b MRF9130LSR3 irl130	PDF
PHILIPS capacitors 0.1 mf Abstract: Transistor t 2 smd motorola Text: Freescale Semiconductor Technical Data MRF18090A Rev. 6, 12/2004 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18090A MRF18090AR3 PHILIPS capacitors 0.1 mf Transistor t 2 smd motorola	PDF
TB200 Abstract: amidon BN-61-202 c12 ph zener diode Text: February 1, 2012 TB200 Frequency=20-1000MHz Pout=60W Gain=10dB Vds=28.0Vdc Idq=1.0A LB401 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com February 1, 2012 20 100 18 90 15 80 13 70 10 60 8 50 5 40 3 30 20 1000 100 200	Original	TB200 20-1000MHz LB401 TB200 28Vdc, 20Mhz 200B104KW50X 100B100GW500X amidon BN-61-202 c12 ph zener diode	PDF
TLX8-0300 Abstract: "capacitor philips" transistor motorola 114-8 motorola s 114-8 smd mosfet z8 smd z5 transistor transistor motorola 351 465B GSM1800 MRF18090A Text: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies	Original	MRF18090A/D MRF18090A MRF18090AS MRF18090A TLX8-0300 "capacitor philips" transistor motorola 114-8 motorola s 114-8 smd mosfet z8 smd z5 transistor transistor motorola 351 465B GSM1800	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9130L Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance	Original	MRF9130L MRF9130LR3 MRF9130LSR3	PDF
AGR09045E Abstract: AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J Text: Preliminary Data Sheet October 2004 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09045E Hz--895 AGR09045E package9-9138 DS04-295RFPP DS04-198RFPP) AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J	PDF
MRF9130L Abstract: MRF9130LR3 MRF9130LSR3 Text: MOTOROLA Order this document by MRF9130L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies	Original	MRF9130L/D MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130L MRF9130LR3 MRF9130LSR3	PDF
AGR09045XUM Abstract: JESD22-C101A RF35 z24 mosfet RK73H2A10R0F Text: Preliminary Data Sheet April 2004 AGR09045XUM 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045XUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09045XUM Hz--895 AGR09045XUM DS04-138RFPP PB04-071RFPP) JESD22-C101A RF35 z24 mosfet RK73H2A10R0F	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance	Original	MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130LR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9130L Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance	Original	MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130LR3	PDF
"RF power MOSFETs" Abstract: marking Z4 MRF9130LR3 MRF9130L MRF9130LSR3 chip resistor 1206 Text: Freescale Semiconductor Technical Data Document Number: MRF9130L Rev. 4, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance	Original	MRF9130L MRF9130LR3 MRF9130LSR3 MRF9130LR3 "RF power MOSFETs" marking Z4 MRF9130L MRF9130LSR3 chip resistor 1206	PDF
RM73B2B103J Abstract: C1206C104KRAC7800 100B100JW DS02-219RFPP Text: Preliminary Data Sheet July 2003 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09045E Hz--895 DS03-058RFPP DS02-219RFPP) RM73B2B103J C1206C104KRAC7800 100B100JW DS02-219RFPP	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09045E Hz--895 DS04-026RFPP DS03-058RFPP)	PDF

smd transistor marking j2 Abstract: Transistor z1 Text: Freescale Semiconductor Technical Data MRF18090A Rev. 6, 12/2004 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18090A MRF18090AR3 smd transistor marking j2 Transistor z1	PDF
transistor motorola 114-8 Abstract: Transistor z1 transistor motorola 351 motorola s 114-8 465B GSM1800 MRF18090A MRF18090AR3 motorola 1815 motorola 114-8 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF18090AR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFET Designed for GSM and GSM EDGE base station applications with frequencies	Original	MRF18090A/D MRF18090AR3 transistor motorola 114-8 Transistor z1 transistor motorola 351 motorola s 114-8 465B GSM1800 MRF18090A MRF18090AR3 motorola 1815 motorola 114-8	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9130L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	MRF9130L/D MRF9130LR3 MRF9130LSR3 DEVICEMRF9130L/D	PDF
irl120 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9130L MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these	Original	MRF9130L MRF9130LR3 MRF9130LSR3 irl120	PDF
AGR09045E Abstract: AGR09045EF AGR09045EU JESD22-C101A Sprague Electric Capacitor VJ1206Y222 Text: Preliminary Data Sheet April 2004 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09045E Hz--895 AGR09045E DS04-150RFPP DS04-026RFPP) AGR09045EF AGR09045EU JESD22-C101A Sprague Electric Capacitor VJ1206Y222	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9130L Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance	Original	MRF9130L MRF9130LR3 MRF9130LSR3	PDF
smd transistor marking z3 Abstract: smd transistor marking j6 J585 mosfet smd transistor marking z8 smd transistor z4 smd transistor marking mf capacitor philips Z9 TRANSISTOR SMD J216 transistor 6 pin SMD Z2 Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF18090AR3 smd transistor marking z3 smd transistor marking j6 J585 mosfet smd transistor marking z8 smd transistor z4 smd transistor marking mf capacitor philips Z9 TRANSISTOR SMD J216 transistor 6 pin SMD Z2	PDF
irl120 Abstract: 100B1R0BW 100B3R9BW AVX 100B ON Semiconductor marking c21 Text: Freescale Semiconductor Technical Data Rev. 3, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9130LR3 MRF9130LSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance	Original	MRF9130LR3 MRF9130LSR3 irl120 100B1R0BW 100B3R9BW AVX 100B ON Semiconductor marking c21	PDF
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet May 2004 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	AGR09045E Hz--895 DS04-198RFPP DS04-150RFPP)	PDF
MRF9130LR3 Abstract: MRF9130LSR3 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9130L/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF9130LR3 MRF9130LSR3 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs	Original	MRF9130L/D MRF9130LR3 MRF9130LSR3 MRF9130LR3 DEVICEMRF9130L/D MRF9130LSR3	PDF

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100B3R3BW Price and Stock

Kyocera AVX Components 100B3R3BW500XT1K

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Kyocera AVX Components 100B3R3BWN1500XT

Kyocera AVX Components 100B3R3BW500XT

100B3R3BW Datasheets (2)

100B3R3BW Datasheets Context Search

C1206C104KRAC7800

ATC capacitor 100b

PHILIPS capacitors 0.1 mf

TB200

TLX8-0300

Untitled

AGR09045E

MRF9130L

AGR09045XUM

Untitled

Untitled

"RF power MOSFETs"

RM73B2B103J

Untitled

smd transistor marking j2

transistor motorola 114-8

Untitled

irl120

AGR09045E

Untitled

smd transistor marking z3

irl120

Untitled

MRF9130LR3