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Kyocera AVX Components 100B470JW500XT1K CAP CER 47PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B470JW500XT1K	Cut Tape	1,313		1	1 $7.09 10 $4.873 100 $3.6943 1000 $3.6943 10000 $3.6943	Buy Now
	100B470JW500XT1K	Digi-Reel	1,313		1	1 $7.09 10 $4.873 100 $3.6943 1000 $3.6943 10000 $3.6943	Buy Now
	100B470JW500XT1K	Reel	500		500	1 - 10 - 100 - 1000 $3.06923 10000 $2.90871	Buy Now
Avnet Americas	100B470JW500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B470JW500XT1K					1 - 10 - 100 - 1000 $2.82 10000 $2.75	Get Quote
Richardson RFPD	100B470JW500XT1K				1,000	1 - 10 - 100 - 1000 $2.42 10000 $2.14	Buy Now
Kyocera AVX Components 100B470JW500XC100 MLC A/B/R - Waffle Pack (Alt: 100B470JW500XC100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B470JW500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B470JW500XC100					1 $5.38 10 $4.64 100 $3.05 1000 $3.05 10000 $3.05	Get Quote
TTI	100B470JW500XC100	WAFL			100	1 - 10 - 100 $3.02 1000 $3.02 10000 $3.02	Buy Now
Richardson RFPD	100B470JW500XC100		500		200	1 - 10 - 100 - 1000 $2.42 10000 $2.14	Buy Now
Kyocera AVX Components 100B470JW500XTV MLC A/B/R - Bulk (Alt: 100B470JW500XTV)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B470JW500XTV	Bulk		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B470JW500XTV					1 - 10 - 100 - 1000 $2.81 10000 $2.81	Get Quote
Kyocera AVX Components 100B470JW500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B470JW500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B470JW500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B470JW500XT		60			1 $4.94 10 $4.25 100 $3.19 1000 $2.57 10000 $2.52	Buy Now
TTI	100B470JW500XT	Reel			500	1 - 10 - 100 - 1000 $2.54 10000 $2.49	Buy Now
Richardson RFPD	100B470JW500XT				500	1 - 10 - 100 - 1000 $2.42 10000 $2.14	Buy Now
Kyocera AVX Components 100B470JW500XTV1K Silicon RF Capacitors / Thin Film MLC A/B/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	100B470JW500XTV1K					1 - 10 - 100 - 1000 $2.3 10000 $2.3	Get Quote

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100B470JW500X Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
100B470JW500XT		American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 47PF 500V P90 1111		Original	PDF
100B470JW500XT1K		American Technical Ceramics	Ceramic Capacitor 47PF 500V P90 1111		Original	PDF

100B470JW500X Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
mosfet 1412 Abstract: No abstract text available Text: Draft Copy Only Preliminary Data Sheet September 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	PDF	AGR09090EF Hz--960 DS03-202RFPP mosfet 1412
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet October 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	PDF	AGR09070EF Hz--960 AGR09070EF DS04-007RFPP DS03-059RFPP)
100B100JW500X Abstract: AGR09090EF JESD22-C101A Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	PDF	AGR09090EF Hz--960 AGR09090EF DS04-058RFPP DS04-029RFPP) 100B100JW500X JESD22-C101A
C20 CT Abstract: 100B220 sprague CT series Text: AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	PDF	AGR09070EF Hz--960 AGR09070EF DS04-057RFPP DS04-027RFPP) C20 CT 100B220 sprague CT series
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	PDF	AGR09090EF Hz--960 DS04-134RFPP DS04-068RFPP)
Johanson Technology Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	PDF	AGR09090EF Hz--960 DS04-029RFPP DS04-005RFPP) Johanson Technology
926 sprague Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	PDF	AGR09070EF Hz--960 AGR09070EF DS04-057RFPP DS04-027RFPP) 926 sprague
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	PDF	AGR09070EF Hz--960 AGR09070EF DS04-027RFPP DS04-007RFPP)
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet July 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	PDF	AGR09070EF Hz--960 AGR09070EF DS03-059RFPP DS03-011RFPP)
J083 Abstract: No abstract text available Text: Preliminary Data Sheet January 2003 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	PDF	AGR09070EF Hz--960 AGR09070EF DS03-011RFPP DS02-221RFPP) J083
TB185 Abstract: No abstract text available Text: February 1, 2012 TB185 Frequency=290-320MHz Pout=200W Gain=16dB Vds=28Vdc Idq=1.2A LR301 PH : 805 484-4210 FAX :( 805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com February 1, 2012 TB185 Gain/Efficiency vs Frequency: Vds=28Vdc, Idq=1.2A, Pout=250W	Original	PDF	TB185 290-320MHz 28Vdc LR301 TB185 28Vdc, 300Mhz 100B130JW500X
100B100JW500X Abstract: AGR09070EF JESD22-C101A 100B100JW500 Text: Preliminary Data Sheet April 2004 AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	PDF	AGR09070EF Hz--960 AGR09070EF DS04-151RFPP DS04-057RFPP) 100B100JW500X JESD22-C101A 100B100JW500
AGR09090EF Abstract: JESD22-C101A ZX18 grm40x7r103k100al Text: Preliminary Data Sheet April 2004 AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	PDF	AGR09090EF Hz--960 AGR09090EF DS04-153RFPP DS04-134RFPP) JESD22-C101A ZX18 grm40x7r103k100al
100B100JW500X Abstract: No abstract text available Text: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	PDF	AGR09090EF Hz--960 Hz--895 DS04-134RFPP DS04-068RFPP) 100B100JW500X

Untitled Abstract: No abstract text available Text: Preliminary Data Sheet December 2003 AGR09090EF 90 W, 921 MHz—960 MHz, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	PDF	AGR09090EF Hz--960 Hz--895 Therma10-12, DS04-064RFPP DS04-058RFPP)
j0947 Abstract: AGR09090EF JESD22-C101A ZX18 ZO 109 wa 100B100JW500X Text: AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced data for global evolution	Original	PDF	AGR09090EF Hz--960 AGR09090EF Typic14 Hz--895 j0947 JESD22-C101A ZX18 ZO 109 wa 100B100JW500X
100B100JW500X Abstract: AGR09070EF JESD22-C101A grm40x7r103k100al Text: AGR09070EF 70 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09070EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	PDF	AGR09070EF Hz--960 AGR09070EF perform26 100B100JW500X JESD22-C101A grm40x7r103k100al
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet October 2003 AGR09090EF 90 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	PDF	AGR09090EF Hz--960 T210-12, DS04-005RFPP DS03-202RFPP)

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100B470JW500X Price and Stock

Kyocera AVX Components 100B470JW500XT1K

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100B470JW500X Datasheets (2)

100B470JW500X Datasheets Context Search

mosfet 1412

Untitled

100B100JW500X

C20 CT

Untitled

Johanson Technology

926 sprague

Untitled

Untitled

J083

TB185

100B100JW500X

AGR09090EF

100B100JW500X

Untitled

j0947

100B100JW500X

Untitled