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Allegro MicroSystems LLC ACS37220LEZATR-100B5 CURRENT SENSOR LOW-RESISTANCE
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DigiKey	ACS37220LEZATR-100B5	Cut Tape	6,000		1	1 $2.66 10 $2.66 100 $1.5636 1000 $1.5636 10000 $1.5636	Buy Now
	ACS37220LEZATR-100B5	Digi-Reel	6,000		1	1 $2.66 10 $2.66 100 $1.5636 1000 $1.5636 10000 $1.5636	Buy Now
	ACS37220LEZATR-100B5	Reel	6,000		1,000	1 - 10 - 100 - 1000 $1.4504 10000 $1.4504	Buy Now
Kyocera AVX Components 100B5R6CT500XT1K CAP CER 5.6PF 500V P90 1111
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DigiKey	100B5R6CT500XT1K	Reel	4,325		1,000	1 - 10 - 100 - 1000 $1.9349 10000 $1.9349	Buy Now
Avnet Americas	100B5R6CT500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B5R6CT500XT1K		868			1 $4.59 10 $3.52 100 $2.63 1000 $2.09 10000 $2.09	Buy Now
Richardson RFPD	100B5R6CT500XT1K				1,000	1 - 10 - 100 - 1000 $2.31 10000 $2.05	Buy Now
Cal-Chip Electronics GMC21CG100B50NT CAP0805 COG 10PF .1PF 50V
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DigiKey	GMC21CG100B50NT	Reel	4,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.07667	Buy Now
	GMC21CG100B50NT	Cut Tape	4,000		1	1 $0.38 10 $0.221 100 $0.1403 1000 $0.09771 10000 $0.09771	Buy Now
	GMC21CG100B50NT	Digi-Reel	4,000		1	1 $0.38 10 $0.221 100 $0.1403 1000 $0.09771 10000 $0.09771	Buy Now
Bristol Electronics	GMC21CG100B50NT		1,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Component Electronics, Inc	GMC21CG100B50NT		420			1 $0.42 10 $0.42 100 $0.32 1000 $0.28 10000 $0.28	Buy Now
Kyocera AVX Components 100B5R1BT500XT1K CAP CER 5.1PF 500V P90 1111
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DigiKey	100B5R1BT500XT1K	Cut Tape	3,666		1	1 $5.98 10 $4.067 100 $3.0503 1000 $2.637 10000 $2.637	Buy Now
	100B5R1BT500XT1K	Digi-Reel	3,666		1	1 $5.98 10 $4.067 100 $3.0503 1000 $2.637 10000 $2.637	Buy Now
	100B5R1BT500XT1K	Reel	3,000		1,000	1 - 10 - 100 - 1000 $2.50769 10000 $2.50769	Buy Now
Kyocera AVX Components 100B560JTN500XT CAP CER 56PF 500V P90 1111
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DigiKey	100B560JTN500XT	Digi-Reel	2,935		1	1 $7.53 10 $5.189 100 $3.9454 1000 $3.9454 10000 $3.9454	Buy Now
	100B560JTN500XT	Cut Tape	2,935		1	1 $7.53 10 $5.189 100 $3.9454 1000 $3.9454 10000 $3.9454	Buy Now
	100B560JTN500XT	Reel	2,500		500	1 - 10 - 100 - 1000 $3.28127 10000 $3.1129	Buy Now

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100B5 Datasheets (41)

Part	Manufacturer	Description	Datasheet Type	PDF
100B50	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
100B50F	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
100B510GTN500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 51PF 500V P90 1111	Original	PDF
100B510GTN500XT1K	American Technical Ceramics	Ceramic Capacitor 51PF 500V P90 1111	Original	PDF
100B510GW500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 51PF 500V P90 1111	Original	PDF
100B510GW500XT1K	American Technical Ceramics	Ceramic Capacitor 51PF 500V P90 1111	Original	PDF
100B510JMN500X	American Technical Ceramics	Ceramic Capacitor 51PF 500V 1111	Original	PDF
100B510JMN500XC20	American Technical Ceramics	Ceramic Capacitor 51PF 500V 1111	Original	PDF
100B510JT500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 51PF 500V P90 1111	Original	PDF
100B510JT500XT1K	American Technical Ceramics	Ceramic Capacitor 51PF 500V P90 1111	Original	PDF
100B510JW500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 51PF 500V P90 1111	Original	PDF
100B510JW500XT1K	American Technical Ceramics	Ceramic Capacitor 51PF 500V P90 1111	Original	PDF
100B560FT500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 56PF 500V P90 1111	Original	PDF
100B560FT500XT1K	American Technical Ceramics	Ceramic Capacitor 56PF 500V P90 1111	Original	PDF

100B560FW500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 56PF 500V P90 1111	Original	PDF
100B560FW500XT1K	American Technical Ceramics	Ceramic Capacitor 56PF 500V P90 1111	Original	PDF
100B560GT500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 56PF 500V P90 1111	Original	PDF
100B560GT500XT1K	American Technical Ceramics	Ceramic Capacitor 56PF 500V P90 1111	Original	PDF
100B560JT500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 56PF 500V P90 1111	Original	PDF
100B560JT500XT1K	American Technical Ceramics	Ceramic Capacitor 56PF 500V P90 1111	Original	PDF

100B5 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TH 2190 HOT Transistor Abstract: No abstract text available Text: Preliminary Data Sheet March 2004 AGR21180EF 180 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21180EF TH 2190 HOT Transistor
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−	Original	PDF	MRF9080 MRF9080LR3 MRF9080LSR3
100B0R1BW Abstract: 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 MW6IC2015NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 0, 2/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS	Original	PDF	MW6IC2015N MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 100B0R1BW 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1
C1206C104KRAC7800 Abstract: 100b6r8 AGR09045E AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW Text: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09045E Hz--895 AGR09045E DS04-295RFPP DS04-198RFPP) C1206C104KRAC7800 100b6r8 AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW
100B101JW Abstract: 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 0, 10/2006 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to	Original	PDF	MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170HR3 DataMRF7S18170H 100B101JW 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HSR3
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110	Original	PDF	MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3
Untitled Abstract: No abstract text available Text: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1
167D Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener Text: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100	Original	PDF	TB167D 30-512MHz 28Vdc LQ801 LB501A 28Vdc, 0R0J12AFX 167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener
MRF6S19120H Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF6S19120H Rev. 0, 2/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	PDF	MRF6S19120H MRF6S19120HR3 MRF6S19120HSR3
C-XM-99-001-01 Abstract: pep cxm MRF21010 Text: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF21010 MRF21010LR1 MRF21010LSR1 C-XM-99-001-01 pep cxm
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF284 Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier	Original	PDF	MRF284 MRF284LR1 MRF284LSR1
Untitled Abstract: No abstract text available Text: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	PDF	MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1
rf push pull mosfet power amplifier Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF9120 Rev. 9, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFET MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of	Original	PDF	MRF9120 MRF9120LR3 MRF9120 rf push pull mosfet power amplifier
C8450 Abstract: MRF5S4140H Text: Document Number: MRF5S4140H Rev. 1, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these	Original	PDF	MRF5S4140H 28-volt MRF5S4140HR3 MRF5S4140HSR3 MRF5S4140H C8450

MRF19085 Abstract: CDR33BX104AKWS GX-0300-55-22 MRF19085LSR3 MRF19085R3 MRF19085SR3 100B5R1 Text: MOTOROLA Order this document by MRF19085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19085 MRF19085R3 MRF19085SR3 MRF19085LSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from	Original	PDF	MRF19085/D MRF19085 MRF19085R3 MRF19085SR3 MRF19085LSR3 MRF19085 MRF19085R3 MRF19085SR3 CDR33BX104AKWS GX-0300-55-22 MRF19085LSR3 100B5R1
100B201JT500XT Abstract: CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282 Text: Freescale Semiconductor Technical Data Document Number: MRF282-2 Rev. 17, 10/2008 RF Power Field Effect Transistor MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	PDF	MRF282--2 MRF282ZR1 458C-03, NI-200Z MRF282--2 100B201JT500XT CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282
50A52P3TUBE Abstract: mds101 Text: General Purpose, High Stability and AC Line EMI Suppression MDS Series Dual In-Line Low Profile, 50 – 630 VDC, High Current Overview Applications Dual in-line DIL metallized polyester (PET) film capacitor. Encapsulation in self-extinguishing material meeting the	Original	PDF
nippon capacitors Abstract: MRF6S23140H j727 Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23140HR3 MRF6S23140HSR3 Designed for CDMA base station applications with frequencies from 2300 to	Original	PDF	MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140H nippon capacitors j727
465B Abstract: CDR33BX104AKWS MRF19125 MRF19125S MRF19125SR3 Text: MOTOROLA Order this document by MRF19125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF19125 MRF19125S MRF19125SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from	Original	PDF	MRF19125/D MRF19125 MRF19125S MRF19125SR3 MRF19125 MRF19125S 465B CDR33BX104AKWS MRF19125SR3
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110	Original	PDF	MRF21090/D MRF21090 MRF21090S
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA MRF19060 MRF19060R3 MRF19060S MRF19060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to	Original	PDF	MRF19060/D MRF19060 MRF19060R3 MRF19060S MRF19060SR3
j340 motorola make Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110	Original	PDF	MRF21090/D MRF21090 MRF21090S MRF21090/D j340 motorola make
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 16, 5/2005 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier	Original	PDF	MRF284 MRF284LR1 MRF284LSR1 MRF284
Untitled Abstract: No abstract text available Text: SD2900 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . . . . GOLD METALLIZATION 2 - 5 0 0 MHz 5 WATTS 28 VOLTS 13.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION The SD2900 is a gold metallized N-Channel MOS	OCR Scan	PDF	SD2900 SD2900 1021498C 1010936C

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100B5 Price and Stock

Allegro MicroSystems LLC ACS37220LEZATR-100B5

Kyocera AVX Components 100B5R6CT500XT1K

Cal-Chip Electronics GMC21CG100B50NT

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Kyocera AVX Components 100B560JTN500XT

100B5 Datasheets (41)

100B5 Datasheets Context Search

TH 2190 HOT Transistor

Untitled

100B0R1BW

C1206C104KRAC7800

100B101JW

Untitled

Untitled

167D

MRF6S19120H

C-XM-99-001-01

Untitled

Untitled

rf push pull mosfet power amplifier

C8450

MRF19085

100B201JT500XT

50A52P3TUBE

nippon capacitors

465B

Untitled

Untitled

j340 motorola make

Untitled

Untitled