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Kyocera AVX Components 100B6R8JW500XC100 MLC A/B/R - Waffle Pack (Alt: 100B6R8JW500XC100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B6R8JW500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B6R8JW500XC100					1 $5.13 10 $4.42 100 $3.3 1000 $2.67 10000 $2.61	Get Quote
Richardson RFPD	100B6R8JW500XC100		150		200	1 - 10 - 100 - 1000 $2.31 10000 $2.05	Buy Now
Kyocera AVX Components 100B6R8JW500XT1K MLC A/B/R - Custom Tape W/Leader (Alt: 100B6R8JW500XT1K)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B6R8JW500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B6R8JW500XT1K					1 - 10 - 100 - 1000 $2.18 10000 $2.18	Get Quote
Richardson RFPD	100B6R8JW500XT1K				1,000	1 - 10 - 100 - 1000 $2.31 10000 $2.05	Buy Now
Kyocera AVX Components 100B6R8JW500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B6R8JW500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B6R8JW500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B6R8JW500XT					1 $4.7 10 $4.05 100 $3.15 1000 $2.67 10000 $2.67	Get Quote
Richardson RFPD	100B6R8JW500XT				500	1 - 10 - 100 - 1000 $2.31 10000 $2.05	Buy Now
Kyocera AVX Components 100B6R8JWN500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B6R8JWN500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B6R8JWN500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B6R8JWN500XT					1 - 10 - 100 - 1000 $3.26 10000 $3.26	Get Quote
Kyocera AVX Components 100B6R8JWN500XC100 Silicon RF Capacitors / Thin Film MLC A/B/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	100B6R8JWN500XC100					1 $5.91 10 $5.09 100 $3.8 1000 $3.07 10000 $3.01	Get Quote
Richardson RFPD	100B6R8JWN500XC100				200	1 - 10 - 100 - 1000 $2.64 10000 $2.35	Buy Now

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100B6R8JW Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
J593 Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157 Text: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21030E AGR21030E AGR21030EU AGR21030EF DS04-163RFPP DS04-065RFPP) J593 AGR21030EF AGR21030EU JESD22-C101A J157
J161 mosfet transistor Abstract: MOSFET J161 100B6R8JW Text: Preliminary Data Sheet July 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21090E AGR21090EU AGR21090EF DS03-070RFPP DS02-276RFPP) J161 mosfet transistor MOSFET J161 100B6R8JW
agere c8 c1 Abstract: 100b8r2jw 100B6R8JW Text: Preliminary Data Sheet January 2003 AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09045E Hz--895 DS02-219RFPP agere c8 c1 100b8r2jw 100B6R8JW
AGR21045EF Abstract: AGR21045XF JESD22-C101A Text: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and	Original	PDF	AGR21045EF AGR21045EF DS04-241RFPP DS04-178RFPP) AGR21045XF JESD22-C101A
AGR21030EF Abstract: 2.4 ghz mosfet AGR21030XF JESD22-C101A Text: AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and	Original	PDF	AGR21030EF AGR21030EF 1030EF AGR21030XF 21045F 12-digit 2.4 ghz mosfet AGR21030XF JESD22-C101A
"RF Power Transistor" Abstract: AGR18030EF JESD22-C101A transistor equivalent table 557 Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	PDF	AGR18030EF AGR18030EF 21045F "RF Power Transistor" JESD22-C101A transistor equivalent table 557
J964 Abstract: AGR21045EF AGR21045XF JESD22-C101A Text: Data Sheet AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and	Original	PDF	AGR21045EF AGR21045EF CGR21045EF AGR21045XF 21045F 12-digit J964 AGR21045XF JESD22-C101A
sm 4500 Abstract: No abstract text available Text: Preliminary Data Sheet February 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access	Original	PDF	AGR21125E AGR21125EU AGR21125EF AGR21125End sm 4500
sm 4500 Abstract: No abstract text available Text: Preliminary Data Sheet January 2003 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (WCDMA), single and multicarrier class AB wireless	Original	PDF	AGR21125E AGR21125EU AGR21125EF DS03-037RFPP DS03-012RFPP) sm 4500
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet August 2003 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21045E AGR21045EU AGR21045EF DS02-380RFPP DS02-276RFPP)
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21090E AGR21090EU AGR21090EF DS04-018RFPP DS03-070RFPP)
J299 Abstract: No abstract text available Text: Preliminary Data Sheet December 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21090E AGR21090EU AGR21090EF DS04-059RFPP DS04-018RFPP) J299
RF POWER MOSFET Abstract: No abstract text available Text: Preliminary Data Sheet February 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access	Original	PDF	AGR21125E AGR21125EU AGR21125EF AG210-12, DS04-108RFPP DS04-038RFPP) RF POWER MOSFET
AGR21090E Abstract: AGR21090EF JESD22-C101A mosfet 6 ghz Text: AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21090E AGR21090E AGR21090EU AGR21090EF 1090EF AGR21090XF M-AGR21090F 12-digit AGR21090EF JESD22-C101A mosfet 6 ghz

equivalent transistor PT 3500 Abstract: 100B100JW500X AGR19125E AGR19125EF AGR19125EU JESD22-C101A Text: Preliminary Data Sheet April 2004 AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19125E Hz--1990 AGR19125E AGR19125EU AGR19125EF IS-95 DS04-161RFPP DS04-035RFPP) equivalent transistor PT 3500 100B100JW500X AGR19125EF AGR19125EU JESD22-C101A
C15B material sheet Abstract: C14A AGR21125E AGR21125EF AGR21125EU C10A C11A C12A C12D JESD22-C101A Text: Preliminary Data Sheet April 2004 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access	Original	PDF	AGR21125E AGR21125E AGR21125EU AGR21125EF DS04-166RFPP DS04-108RFPP) C15B material sheet C14A AGR21125EF AGR21125EU C10A C11A C12A C12D JESD22-C101A
AGR21045E Abstract: AGR21045EF AGR21045EU JESD22-C101A 178rf Text: Data Sheet May 2004 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21045E AGR21045E AGR21045EU AGR21045EF car18109-9138 DS04-178RFPP DS04-164RFPP) AGR21045EF AGR21045EU JESD22-C101A 178rf
100B100JW500X Abstract: AGR21125E AGR21125EF AGR21125EU JESD22-C101A Text: Preliminary Data Sheet November 2003 AGR21125E 125 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21125E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (WCDMA), single and multicarrier class AB wireless	Original	PDF	AGR21125E AGR21125E AGR21125EU AGR21125EF DS04-038RFPP DS03-037RFPP) 100B100JW500X AGR21125EF AGR21125EU JESD22-C101A
transistor equivalent table 557 Abstract: 21045F Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	PDF	AGR18030EF DS04-204RFPP PB04-101RFPP) transistor equivalent table 557 21045F
AGR21090 Abstract: mosfet j460 AGR21090E AGR21090EF JESD22-C101A mosfet J442 100b6r8 100B8 100B6R8JW Text: Preliminary Data Sheet April 2004 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused, metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21090E AGR21090E AGR21090EU AGR21090EF DS04-165RFPP DS04-059RFPP) AGR21090 mosfet j460 AGR21090EF JESD22-C101A mosfet J442 100b6r8 100B8 100B6R8JW
AGR21045E Abstract: AGR21045EF AGR21045EU JESD22-C101A 100B8 Agere Systems Text: Preliminary Data Sheet April 2004 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21045E AGR21045E AGR21045EU AGR21045EF DS04-164RFPP DS04-037RFPP) AGR21045EF AGR21045EU JESD22-C101A 100B8 Agere Systems
AGR21030EF Abstract: AGR21030XF JESD22-C101A J622 Text: Preliminary Data Sheet June 2004 AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21030EF AGR21030EF DS04-225RFPP DS04-200RFPP) AGR21030XF JESD22-C101A J622
AGR18030EF Abstract: JESD22-C101A Text: Preliminary Data Sheet November 2004 AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	PDF	AGR18030EF AGR18030EF DS04-204RFPP PB04-101RFPP) JESD22-C101A
J605 Abstract: No abstract text available Text: Preliminary Data Sheet December 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21030E AGR21030EU AGR21030EF Powe10-12, DS04-065RFPP J605

100B6R8JW Search Results

100B6R8JW Price and Stock

Kyocera AVX Components 100B6R8JW500XC100

Kyocera AVX Components 100B6R8JW500XT1K

Kyocera AVX Components 100B6R8JW500XT

Kyocera AVX Components 100B6R8JWN500XT

Kyocera AVX Components 100B6R8JWN500XC100

100B6R8JW Datasheets Context Search

J593

J161 mosfet transistor

agere c8 c1

AGR21045EF

AGR21030EF

"RF Power Transistor"

J964

sm 4500

sm 4500

Untitled

Untitled

J299

RF POWER MOSFET

AGR21090E

equivalent transistor PT 3500

C15B material sheet

AGR21045E

100B100JW500X

transistor equivalent table 557

AGR21090

AGR21045E

AGR21030EF

AGR18030EF

J605