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    Kyocera AVX Components 100B8R2CP500XTV

    MLC A/B/R - Custom Tape W/Leader (Alt: 100B8R2CP500XTV)
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    Kyocera AVX Components 100B8R2CP500XT

    1111 | SMD Chip | 500 VDC | P90 | 8.2pF | 0.25pF | SnPb (Heavy) | T&R 7 - Custom Tape W/Leader (Alt: 100B8R2CP500XT)
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    Richardson RFPD 100B8R2CP500XT 500
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    Kyocera AVX Components 100B8R2CP500XC100

    Silicon RF Capacitors / Thin Film MLC A/B/R
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    Richardson RFPD 100B8R2CP500XC100 200
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    Kyocera AVX Components 100B8R2CP500XTV1K

    Silicon RF Capacitors / Thin Film MLC A/B/R
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    Kyocera AVX Components 100B8R2CP500XT1K

    Silicon RF Capacitors / Thin Film MLC A/B/R
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    100B8R2CP500X Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3

    100B471JP200X

    Abstract: 100B110JP500X T495X106K035AS4394 400S CDR33BX104AKWS MRF19045R3 MRF19045SR3 100B8R2CP500X
    Text: MOTOROLA Order this document by MRF19045/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19045R3 MRF19045SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF19045/D MRF19045R3 MRF19045SR3 MRF19045R3 100B471JP200X 100B110JP500X T495X106K035AS4394 400S CDR33BX104AKWS MRF19045SR3 100B8R2CP500X

    100B2R7CP500X

    Abstract: AN1955 MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21100LR3 and MRF5S21100LSR3 replaced by MRF5S21100HR3 and MRF5S21100HSR3. “H” suffix indicates lower thermal resistance package. The RF MOSFET Line


    Original     		PDF MRF5S21100L/D MRF5S21100LR3 MRF5S21100LSR3 MRF5S21100HR3 MRF5S21100HSR3. MRF5S21100LR3 MRF5S21100LSR3 100B2R7CP500X AN1955 MRF5S21100HSR3 MRF5S21100L

    AN1955

    Abstract: CDR33BX104AKWS MRF5S21100HR3 MRF5S21100HSR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HSR3


    Original     		PDF MRF5S21100H/D MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3 AN1955 CDR33BX104AKWS MRF5S21100HSR3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100HR3 N-Channel Enhancement-Mode Lateral MOSFETs MRF5S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100H/D MRF5S21100HR3 MRF5S21100HR3 MRF5S21100HSR3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19045R3 MRF19045SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier


    Original     		PDF MRF19045R3 MRF19045SR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF19045 Rev. 7, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF19045LR3 MRF19045LSR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF19045 MRF19045LR3 MRF19045LSR3

    Untitled

    Abstract: No abstract text available
    Text: MRF5S21100H Rev. 2, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3

    2a258 transistor

    Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
    Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original     		PDF DL110/D 2a258 transistor Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index

    400S

    Abstract: AN1955 CDR33BX104AKWS MRF19045LR3 MRF19045LSR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF19045/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19045LR3 MRF19045LSR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs


    Original     		PDF MRF19045/D MRF19045LR3 MRF19045LSR3 MRF19045LR3 400S AN1955 CDR33BX104AKWS MRF19045LSR3

    6 pin mosfet Z2

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF19045 MRF19045R3 MRF19045S MRF19045SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2. 0 G Hz . S u i ta b l e fo r T D M A, C D M A a n d mul ti c arri er ampl i fi er


    Original     		PDF MRF19045 MRF19045R3 MRF19045S MRF19045SR3 6 pin mosfet Z2

    XRF286

    Abstract: XRF286S MRF286 MOTOROLA XRF286 47nj capacitor MRF286S MOTOROLA 934 100B910JP500X 95F769 CDR33BX104AKWS
    Text: MOTOROLA Order this document from WISD RF Marketing SEMICONDUCTOR TECHNICAL DATA MRF286 MRF286S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Order sample parts by XRF286,S PILOT PRODUCTION PROTOTYPE


    Original     		PDF MRF286 MRF286S XRF286 MRF286 MRF286, MRF286S XRF286S MOTOROLA XRF286 47nj capacitor MOTOROLA 934 100B910JP500X 95F769 CDR33BX104AKWS

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA MRF5S21100LR3 and MRF5S21100LSR3 replaced by MRF5S21100HR3 and MRF5S21100HSR3. “H” suffix indicates lower thermal resistance package. MRF5S21100LR3 RF Power Field Effect Transistors MRF5S21100LSR3


    Original     		PDF MRF5S21100L/D MRF5S21100LR3 MRF5S21100LSR3 MRF5S21100HR3 MRF5S21100HSR3. MRF5S21100LR3 MRF5S21100LSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF19045 Rev. 7, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF19045LR3 MRF19045LSR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF19045 MRF19045LR3 MRF19045LSR3

    motorola 5118

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF 84RF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3 motorola 5118

    SKF NUT

    Abstract: CDR33BX104AKWS MRF19045 MRF19045S 405 motorola
    Text: MOTOROLA Order this document by MRF19045/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19045 MRF19045S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


    Original     		PDF MRF19045/D MRF19045 MRF19045S MRF19045 SKF NUT CDR33BX104AKWS MRF19045S 405 motorola

    AN1955

    Abstract: CDR33BX104AKWS MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100LR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100LSR3


    Original     		PDF MRF5S21100L/D MRF5S21100LR3 MRF5S21100LSR3 MRF5S21100LR3 AN1955 CDR33BX104AKWS MRF5S21100L MRF5S21100LSR3

    IM3910

    Abstract: 400S AN1955 CDR33BX104AKWS MRF19045 MRF19045LR3 MRF19045LSR3 100B471JP200X RM73B2 Arlon
    Text: Freescale Semiconductor Technical Data Document Number: MRF19045 Rev. 8, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF19045LR3 MRF19045LSR3 Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF19045 MRF19045LR3 MRF19045LSR3 MRF19045LR3 IM3910 400S AN1955 CDR33BX104AKWS MRF19045 MRF19045LSR3 100B471JP200X RM73B2 Arlon

    100B2R7CP500X

    Abstract: MRF5S21100H AN1955 C1210C104J5RAC MRF5S21100HR3 MRF5S21100HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3 100B2R7CP500X MRF5S21100H AN1955 C1210C104J5RAC MRF5S21100HSR3

    ansi-y14.5m-1994

    Abstract: 100B2R7CP500X CDR33BX104AKWS MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3 motorola 5118
    Text: MOTOROLA Order this document by MRF5S21100L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF5S21100L N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100L/D MRF5S21100L MRF5S21100L MRF5S21100LR3 MRF5S21100LSR3 ansi-y14.5m-1994 100B2R7CP500X CDR33BX104AKWS MRF5S21100LSR3 motorola 5118

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF19045 Rev. 9, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF19045LR3 MRF19045LSR3 Designed for PCN and PCS base station applications with frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF19045 MRF19045LR3 MRF19045LSR3 MRF19045LR3

    Untitled

    Abstract: No abstract text available
    Text: MRF5S21100H Rev. 2, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF19045/D SEMICONDUCTOR TECHNICAL DATA MRF19045 MRF19045R3 MRF19045S MRF19045SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF19045/D MRF19045 MRF19045R3 MRF19045S MRF19045SR3 MRF19045/D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF19045/D SEMICONDUCTOR TECHNICAL DATA MRF19045 MRF19045R3 MRF19045S MRF19045SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to


    Original     		PDF MRF19045/D MRF19045 MRF19045R3 MRF19045S MRF19045SR3