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    100V 1A TRANSISTOR Search Results

    100V 1A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    100V 1A TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ZXTP25100CFH 100V, SOT23, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC cont = -1A VCE(sat) < -220mV @ 1A RCE(sat) = 150m⍀ PD = 1.25W Complementary part number ZXTN25100CFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25100CFH -100V -220mV ZXTN25100CFH D-81541

    ZXTN25100CFH

    Abstract: design ideas TS16949 ZXTP25100CFH ZETEX GATE DRIVER
    Text: ZXTP25100CFH 100V, SOT23, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC cont = -1A VCE(sat) < -220mV @ 1A RCE(sat) = 150m⍀ PD = 1.25W Complementary part number ZXTN25100CFH Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25100CFH -100V -220mV ZXTN25100CFH D-81541 ZXTN25100CFH design ideas TS16949 ZXTP25100CFH ZETEX GATE DRIVER

    IRFD110

    Abstract: IRFD110 91 TA17441 TB334
    Text: IRFD110 Data Sheet January 2002 1A, 100V, 0.600 Ohm, N-Channel Power MOSFET Features • 1A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFD110 IRFD110 IRFD110 91 TA17441 TB334

    an7254

    Abstract: RFL1P10 RFL1P08
    Text: RFL1P08, RFL1P10 Semiconductor 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs July 1998 Features Description • 1A, -80V and -100V • Linear Transfer Characteristics These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    Original     		PDF RFL1P08, RFL1P10 -100V, -100V TA9400. AN7254 AN7260. RFL1P10 RFL1P08

    TS16949

    Abstract: ZXTN25100DZ ZXTP25100CZ ZXTP25100CZTA
    Text: ZXTP25100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 1A VCE(sat) < -225mV @ 1A RCE(sat) = 155m⍀ PD = 2.4W Complementary part number ZXTN25100DZ Description C Advanced process capability and package design have been used to


    Original     		PDF ZXTP25100CZ -100V -225mV ZXTN25100DZ D-81541 TS16949 ZXTN25100DZ ZXTP25100CZ ZXTP25100CZTA

    RFL1N10

    Abstract: AN7254 AN7260 RFL1N08
    Text: [ /Title RFL1N 08, RFL1N1 0 /Subject (1A, 80V and 100V, 1.200 Ohm, NChannel, Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel, Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdf- RFL1N08, RFL1N10 Semiconductor 1A, 80V and 100V, 1.200 Ohm,


    Original     		PDF O204AA) RFL1N08, RFL1N10 AN7254 AN7260. RFL1N10 AN7260 RFL1N08

    ZXTN25100CFH

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTP25100CFH 100V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -100V Maximum Continuous Collector Current IC = -1A VCE sat < -220mV @ -1A


    Original     		PDF ZXTP25100CFH -100V -220mV ZXTN25100CFH AEC-Q101 J-STD-020 MIL-STD-202, DS33758

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT593 100V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • BVCEO > -100V Maximum Continuous Collector Current IC = -1A Excellent hFE Characteristics up to IC = -1A


    Original     		PDF FMMT593 -100V FMMT493 AEC-Q101 J-STD-020 MIL-STD-202, DS33106

    IRFD110

    Abstract: IRFD113 HARRIS IRFD110 IRFD111 IRFD112 TA17441 TB334 IRFD110 91
    Text: IRFD110, IRFD111, IRFD112, IRFD113 Semiconductor 1A and 0.8A, 80V and 100V, 0.6 and 0.8 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1A and 0.8A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFD110, IRFD111, IRFD112, IRFD113 IRFD110 IRFD113 HARRIS IRFD110 IRFD111 IRFD112 TA17441 TB334 IRFD110 91

    Q1NE10L

    Abstract: JESD97 STQ1NE10L STQ1NE10L-AP d400S Q1NE10
    Text: STQ1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID STQ1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology ■ Low threshold drive


    Original     		PDF STQ1NE10L Q1NE10L JESD97 STQ1NE10L STQ1NE10L-AP d400S Q1NE10

    STQ1NE10L-AP

    Abstract: q1ne10l Q1NE10
    Text: STQ1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID STQ1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged technology ■ Low threshold drive


    Original     		PDF STQ1NE10L STQ1NE10L STQ1NE10L-AP q1ne10l Q1NE10

    stq1ne10l

    Abstract: Q1NE10L stq1ne10l-ap
    Text: STQ1NE10L N-channel 100V - 0.3Ω - 1A - TO-92 STripFET Power MOSFET General features Type VDSS RDS on ID STQ1NE10L 100V <0.4Ω 1A • Exceptional high dv/dt capability ■ 100% avalanche tested ■ Avalanche rugged tecnology ■ Low threshold drive TO-92


    Original     		PDF STQ1NE10L STQ1NE10L STQ1NE10L-AP Q1NE10L

    IRFD110

    Abstract: IRFD110 91 2314 mosfet TA17441 TB334
    Text: IRFD110 Data Sheet July 1999 1A, 100V, 0.600 Ohm, N-Channel Power MOSFET • 1A, 100V • rDS ON = 0.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance


    Original     		PDF IRFD110 TB334 TA17441. IRFD110 IRFD110 91 2314 mosfet TA17441 TB334

    SNVS369

    Abstract: LM5109
    Text: LM5109 LM5109 100V / 1A Peak Half Bridge Gate Driver Literature Number: SNVS369 LM5109 100V / 1A Peak Half Bridge Gate Driver General Description The LM5109 is a low cost high voltage gate driver, designed to drive both the high side and the low side N-Channel


    Original     		PDF LM5109 LM5109 SNVS369 SNVS369

    ZXTN19100CFF

    Abstract: TS16949 ZXTP19100CFF ZXTP19100CFFTA
    Text: ZXTP19100CFF 100V, SOT23F, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC cont = -2A VCE(sat) < 120mV @ 1A RCE(sat) = 95m⍀ PD = 1.5W Complementary part number: ZXTN19100CFF Description C Packaged in the SOT23 outline this new low saturation 100V PNP


    Original     		PDF ZXTP19100CFF OT23F, -100V 120mV ZXTN19100CFF D-81541 ZXTN19100CFF TS16949 ZXTP19100CFF ZXTP19100CFFTA

    Untitled

    Abstract: No abstract text available
    Text: ZXTP19100CFF 100V, SOT23F, PNP medium power transistor Summary BVCEO > -100V BVECO > -7V IC cont = -2A VCE(sat) < 120mV @ 1A RCE(sat) = 95m⍀ PD = 1.5W Complementary part number: ZXTN19100CFF Description C Packaged in the SOT23 outline this new low saturation 100V PNP


    Original     		PDF ZXTP19100CFF OT23F, -100V 120mV ZXTN19100CFF D-81541

    Untitled

    Abstract: No abstract text available
    Text: ZXTP19100CZ 100V PNP medium power transistor in SOT89 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 2.4W Complementary part number ZXTN19100CZ Description C Packaged in the SOT89 outline this new low saturation 100V PNP


    Original     		PDF ZXTP19100CZ -100V -130mV ZXTN19100CZ ZXTP19100CZTA D-81541

    RFL1N10L

    Abstract: AN7254 AN7260
    Text: RFL1N10L 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET August 1999 Features Description • 1A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level 5V driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special


    Original     		PDF RFL1N10L O-205AF RFL1N10L AN7254 AN7260

    RFL1N10L

    Abstract: AN7254 AN7260
    Text: RFL1N10L 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET September 1998 Features Description • 1A, 100V This is an N-Channel enhancement mode silicon gate power field effect transistor specifically designed for use with logic level 5V driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished through a special


    Original     		PDF RFL1N10L O-205AF RFL1N10L AN7254 AN7260

    n1nf10

    Abstract: JESD97 STN1NF10
    Text: STN1NF10 N-channel 100V - 0.7Ω -1A SOT-223 STripFET II Power MOSFET General features • Type VDSS RDS on ID STN1NF10 100V <0.8Ω 1A 2 Exceptional dv/dt capability 1 Description 2 3 SOT-223 This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature


    Original     		PDF STN1NF10 OT-223 N1NF10 n1nf10 JESD97 STN1NF10

    Untitled

    Abstract: No abstract text available
    Text: FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions.


    Original     		PDF FCX493 FCX593 FCX493TA FCX493TC

    AN7254

    Abstract: 1N08 AN7260 RFL1N08 RFL1N10
    Text: S RFL1N08, RFL1N10 S e m ico n d ucto r 7 1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs September 1998 Features Description • 1A, 80V and 100V These are N-channel enhancement mode silicon-gate power field-effect transistors designed for applications such as


    OCR Scan     		PDF RFL1N08, RFL1N10 RFL1N08 O-205AF RFL1N08 RFL1N10 TA09282. AN7254 AN7260. 1N08 AN7260

    RFL1N10

    Abstract: No abstract text available
    Text: Hormis S RFL1N08L, RFL1N10L S e m ico n d ucto r 7 1A, 80V and 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFETs September 1998 Features Description • 1A, 80V and 100V RFL1N08L TO -205AF RFL1N08L These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use


    OCR Scan     		PDF RFL1N08L, RFL1N10L TA09524. AN7254 AN7260. RFL1N10

    Untitled

    Abstract: No abstract text available
    Text: RFL1P08, RFL1P10 HARRIS S E M I C O N D U C T O R 1A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs July 1998 Features Description • 1A, -80V and -100V • Linear Transfer Characteristics These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such


    OCR Scan     		PDF RFL1P08, RFL1P10 -100V, -100V TA9400. AN7254 AN7260.