IRFP2410
Abstract: IRFPE30
Text: Preliminary Data Sheet PD - 9.1251 IRFP2410 HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling VDSS = 100V RDS on = 0.025 Ω
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IRFP2410
O-247
IRFPE30
IRFP2410
IRFPE30
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IRF530N
Abstract: IRF1010
Text: Previous Datasheet Index Next Data Sheet PD - 9.1351 IRF530N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.11Ω ID = 15A Description
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IRF530N
O-220
commercial-industrRF1010
IRF530N
IRF1010
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DV 47 25V
Abstract: mosfet 3710
Text: HEXFET Dynamic dv/dt Rating 175 ْC Operating Temperature Fast switching Ease of Paralleling Simple Drive Requirements E 3710 Power MOSFET VDSS = 100V ID25 = 60A RDS ON = 0.023 Description Third Generation HEXFETs from International Rectifier provide the designer
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O-220
50watts.
DV 47 25V
mosfet 3710
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IRF540N
Abstract: MOSFET IRF540n IRF1010 irf1010 applications
Text: PD - 9.1341 IRF540N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.052Ω ID = 27A Description Fifth Generation HEXFETs from International Rectifier
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IRF540N
O-220
IRF1010
IRF540N
MOSFET IRF540n
IRF1010
irf1010 applications
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IRF530N
Abstract: IRF530N applications IRF1010 irf1010 applications
Text: PD - 9.1351 IRF530N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.11Ω ID = 15A Description Fifth Generation HEXFETs from International Rectifier
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IRF530N
O-220
IRF1010
IRF530N
IRF530N applications
IRF1010
irf1010 applications
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Untitled
Abstract: No abstract text available
Text: DIGITRON SEMICONDUCTORS UFR7010-UFR7020 UFR7120-UFR7150 UFR7250-UFR7280 ULTRA FAST RECOVERY RECTIFIERS MAXIMUM RATINGS Rating UFR Symbol 7010 7015 7020 7120 7130 7140 7150 7250 7260 7270 7280 Working peak reverse voltage VRWM 100V 150V 200V 200V 300V 400V
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UFR7010-UFR7020
UFR7120-UFR7150
UFR7250-UFR7280
FR7150
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IRF540N
Abstract: IRF1010
Text: Previous Datasheet Index Next Data Sheet PD - 9.1341 IRF540N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.052Ω ID = 27A Description
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IRF540N
O-220
commercial-indust10
IRF540N
IRF1010
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irf1010
Abstract: IRfl23 IRL2310
Text: PD - 9.1275 IRL2310 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V GS= 4.5V & 10V 175°C Operating Temperature VDSS = 100V
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IRL2310
O-220
IRF1010
irf1010
IRfl23
IRL2310
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MSK4230
Abstract: 10 amp H-bridge Mosfet stepper
Text: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. 10 AMP, 70V, H-BRIDGE MOSFET STEPPER MOTOR DRIVE 4707 Dey Road Liverpool, N.Y. 13088 4230 315 701-6751 FEATURES: 70V Maximum Operating Motor Supply Voltage 100V Absolute Maximum Output Stage Rating
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MIL-PRF-38534
10Amp
MSK4230
10 amp H-bridge Mosfet stepper
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irf 210 mosfet
Abstract: IRf 48 MOSFET IRL530N
Text: Previous Datasheet Index Next Data Sheet PD - 9.1348A IRL530N PRELIMINARY HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V
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IRL530N
O-22Y
irf 210 mosfet
IRf 48 MOSFET
IRL530N
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MSK4231RH
Abstract: No abstract text available
Text: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY RAD HARD 10 AMP, 70V, H-BRIDGE MOSFET STEPPER MOTOR DRIVE 4231RH FEATURES: Total Dose Hardened to 100 Krads Si (Method 1019.7 Condition A) 70V Maximum Operating Motor Supply Voltage 100V Absolute Maximum Output Stage Rating
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MIL-PRF-38534
4231RH
10Amp
MSK4230)
MSK4231
MSK4231RH
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PDF
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Untitled
Abstract: No abstract text available
Text: File No. 3 9 2 SHEET 1 / 1 SPECIFICATION Electrical: Current Rating: 1A Voltage Rating: 100V RMS/150V DC C ontact Resistance: 20m Ohms Max. Insulation Resistance: 10.000M Ohms Min. Dielectric S trenght: 1000V RMS Min. Air And Creepage: 1 .4 /0 .4 Min. Capacitance: 1 pF.
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27xNo.
RMS/150V
10-2000Hz
68-2-20Tb)
30B/F
UI94V-0,
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IEC 68-2-20Tb
Abstract: C50S
Text: File No. 3 9 2 SHEET 1 / 1 SPECIFICATION E le c tric a l: Current Rating: 1A Voltage Rating: 100V RMS/150V DC C ontact Resistance: 20m Ohms Max. Insulation Resistance: 10,000M Ohms Min. Dielectric Strenght: 1000V RMS Min. Air And Creepage: 1 .4 /0 .4 Min.
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27xNo.
RMS/150V
10-2000Hz
68-2-20Tb)
30B/F
UI94V-0,
IEC 68-2-20Tb
C50S
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PDF
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Untitled
Abstract: No abstract text available
Text: 8 I F ile N o .|5 9 2 S H EET ±JL SPECIFICATION Electrical: Current Rating: 1A Voltage Rating: 100V RMS/150V DC C ontact Resistance: 20m Ohms Max. Insulation Resistance: 10.000M Ohms Min. Dielectric S trenght: 1000V RMS Min. Air And Creepage: 1 .4 /0 .4 Min.
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RMS/150V
10-2000H
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Comatel 313
Abstract: ny9t
Text: QUESTO DISEGNO E' 01 PROPRIETÀ' DELLA KONTEK COMATEL. S.p.o. E NON PUÒ1 ESSERE USATO, E /O CEDUTO A TERZI SENZA IL PERMESSO SCRITTO DELLA KONTEK COMATEL S.p.o. _ TECHNICAL DATA Electrical Operating Voltage: 100V max Current Rating: 0.5A maxi Dielectric withstanding: 500VAC RMS
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500VAC
30sec
UL94V-0
229XX440
50381229XX440
Comatel 313
ny9t
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PDF
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Untitled
Abstract: No abstract text available
Text: 8 F ile , 1 N o ,|5 9 2 IS H E E T 1 /1 SPECIFICATION E le c t r ic a l: Current Rating: 1A Voltage Rating: 100V RMS/150V DC C ontact Resistance: 20m Ohms Max. Insulation Resistance: 10.OOOM Ohms Min. Dielectric Strenght: 1000V RMS Min. Air And Creepage: 1 .4 /0 .4 Min.
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N0J592
RMS/150V
10-2000Hz
68-2-20Tb)
30B/F
UI94V-0,
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Battery holder
Abstract: No abstract text available
Text: HD aU A/D ELECTRONICS. INC. 21P SCART SOCKET: Rating: 3A 100V A.C. Contact Resistance; 20mQ MAX Insulation Resistance: 1000Mfi MIN at 500V D.C. Withstanding Voltage: 800V A.C. for one minute AEI-026 21P SCART PLUG: With 0 9mm, <p 11mm, <j> 13mm screw wire hold.
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AEI-026
1000Mfi
ASP-021
ABH-001
ABH-002
Battery holder
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PDF
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Untitled
Abstract: No abstract text available
Text: P D -9.1341 International Hk ]Rectifier IRF540N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100V ^DS on = 0.052Q Id = Description
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IRF540N
T0-220
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irfp3710
Abstract: RFPE30
Text: PD - 9.1490A International IOR Rectifier IRFP3710 PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = "100V ^ D S o n = 0.025Î2
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IRFP3710
O-247
irfp3710
RFPE30
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MD-50CV
Abstract: No abstract text available
Text: SCREW TYPE 3.5 [0.138] 1.5 [0.059] r'Q O Ö □O X T TS vV M vN o rr> CD O I3.5mm [0.531]- = ~ 13,7mm [0.539] 1 tD slAlAlAlA 3.5 [0.138] 9.5 [0.374], Thread Pitch=1.0m m SPECIFICATIONS: RATING: 100V AC 1A MAX OR 12V DC 2A MAX INSULATION RESISTANCE:
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MD-50CV
07OO5
MD-50CV
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Untitled
Abstract: No abstract text available
Text: QUESTO DISEGNO E' DI PROPRIETÀ' DELLA KONTEK COMATEL S.p.0. E NON PUÒ* ESSERE USATO, E /O CEDUTO A TERZI SENZA IL PERMESSO SCRITTO DELLA KONTEK COMATEL S.p.o. TECHNICAL DATA Electrical O perating Voltage: 100V max C urrent Rating: 0.5A maxi Dielectric withstanding: 500V A C RMS
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30sec
UL94V--
ul94v-
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IRF9530
Abstract: IRF9530 mosfet IRF953Q 25Q 328 320G k17c IRF9530 international
Text: PD-9.320G International S Rectifier IRF9530 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = -100V ^DS on = 0.30Q
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IRF9530
O-220
-100V
IRF9530
IRF9530 mosfet
IRF953Q
25Q 328
320G
k17c
IRF9530 international
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PDF
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1RL520
Abstract: 25CC 561C AN-994 IRL520 IRL520S SMD-220 smd diode marking U10
Text: International Rectifier PD-9.561C IRL520 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V 175°C Operating Temperature Fast Switching Ease of Paralleling VDSS= 100V R DS(on) = 0.27Q
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IRL520
O-220
IRL520S
1RL520
25CC
561C
AN-994
SMD-220
smd diode marking U10
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PDF
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MD-80CV
Abstract: No abstract text available
Text: SCREW TYPE 3.5 [0 .1 3 8 ] 1.5 [0.059] rO O O V M V tV fs □Q ö •<& o r-~> CO■ 13.5mm [0.531]-CD 13.7mm [0.539] CD slAlAlAlA 3.5 [0.138] 9.5 [0.374], Thread Pitch=1.0mm SPECIFICATIONS: RATING: 100V AC 1A MAX OR 12V DC 2A MAX INSULATION RESISTANCE:
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MD-80CV
07OO5
MD-80CV
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