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    1010N Search Results

    1010N Result Highlights (1)

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    10145226-1010N13LF Amphenol Communications Solutions DDR4 Memory Module Sockets, Storage and Server System, Through Hole, 288 Positions, 0.85mm (0.033in) Pitch. Visit Amphenol Communications Solutions
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    1010N Price and Stock

    Littelfuse Inc CPC1010N

    SSR RELAY SPST-NO 170MA 0-250V
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    DigiKey CPC1010N Tube 18,682 1
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    Newark CPC1010N Bulk 450 1
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    C&K RTE1010N14

    SWITCH ROTARY DIP BCD 0.1A 30V
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    DigiKey RTE1010N14 Tube 2,615 1
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    TME RTE1010N14 7,800
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    New Advantage Corporation RTE1010N14 1,950 1
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    Sager RTE1010N14 1,950
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    Littelfuse Inc CPC1010NTR

    SSR RELAY SPST-NO 170MA 0-250V
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    DigiKey CPC1010NTR Digi-Reel 2,590 1
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    CPC1010NTR Cut Tape 2,590 1
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    Infineon Technologies AG IRF1010NSTRLPBF

    MOSFET N-CH 55V 85A D2PAK
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    DigiKey IRF1010NSTRLPBF Digi-Reel 1,660 1
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    IRF1010NSTRLPBF Cut Tape 1,660 1
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    IRF1010NSTRLPBF Reel 800 800
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    Mouser Electronics IRF1010NSTRLPBF 8,420
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    Newark IRF1010NSTRLPBF Cut Tape 469 1
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    NexGen Digital IRF1010NSTRLPBF 895
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    Chip 1 Exchange IRF1010NSTRLPBF 24,349
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    EBV Elektronik IRF1010NSTRLPBF 25,600 9 Weeks 800
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    New Advantage Corporation IRF1010NSTRLPBF 11,200 1
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    Win Source Electronics IRF1010NSTRLPBF 25,728
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    Nexperia PHPT61010NYX

    TRANS NPN 100V 10A LFPAK56
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    DigiKey PHPT61010NYX Cut Tape 621 1
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    PHPT61010NYX Digi-Reel 621 1
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    Mouser Electronics PHPT61010NYX 4,025
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    Newark PHPT61010NYX Cut Tape 1,440 1
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    TME PHPT61010NYX 1
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    Avnet Asia PHPT61010NYX 16 Weeks 3,000
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    Avnet Silica PHPT61010NYX 18 Weeks 1,500
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    EBV Elektronik PHPT61010NYX 18 Weeks 1,500
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    1010N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor C3866

    Abstract: C3866 C3866* transistor c3866 transistor C3866 FE M7824 FE P C3866 FE P C3866 17 R5509-42 pmt divider circuit
    Text: LOW-LIGHT-LEVEL NIR NEAR INFRARED:1.4µm/1.7µm MEASUREMENT PHOTOMULTIPLIER TUBES R5509-42/R5509-72 IN THE NIR with EXCLUSIVE COOLERS APPLICATION EXAMPLE: Photoluminescence measurement Sample 1 SAMPLE TEMPERATURE Sample structure: InAlAs/InGaAs (SQWs)/InP(sub)


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    PDF R5509-42/R5509-72 SE-171-41 TPMH1267E02 transistor C3866 C3866 C3866* transistor c3866 transistor C3866 FE M7824 FE P C3866 FE P C3866 17 R5509-42 pmt divider circuit

    mvb bus schematics

    Abstract: mc88000 DSP56001 users manual IC 7492 real time application and product for fir 32 bit carry select adder code 74 hc 589 DSP96002 fft D1 PGA 478 DSP96002
    Text: DSP96002 32-BIT DIGITAL SIGNAL PROCESSOR USER’S MANUAL Motorola, Inc. Semiconductor Products Sector DSP Division 6501 William Cannon Drive, West Austin, Texas 78735-8598 SECTION 1 DSP96002 INTRODUCTION This manual describes the first member of a family of dual-port IEEE floating point programmable CMOS


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    PDF DSP96002 32-BIT DSP96002 DSP96002. mvb bus schematics mc88000 DSP56001 users manual IC 7492 real time application and product for fir 32 bit carry select adder code 74 hc 589 DSP96002 fft D1 PGA 478

    MDT2010

    Abstract: No abstract text available
    Text: MDT2010 IB 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology combines higher speeds and smaller size with the low power and high noise immunity of CMOS. On chip memory system includes 1.0 K(for MDT2010) bytes of ROM, and 32 bytes of


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    PDF MDT2010 MDT2010) MDT2010

    MDT10P432

    Abstract: S31-S38 mdt*10P432
    Text: MDT10P432 1. 概述 上电复位 内部 RC 432K, 440K, 455K, 480KHz 在 OPTION 这个 8 位基本内存控制器是一个集高速体积小、低功 里选择 耗和抗高噪声一体的静态 CMOS 芯片。它包括 512 个字 系统时钟: 455KHz 晶振 OSC1 电容 50P; OSC2


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    PDF MDT10P432 480KHz 455KHz PA0-78 Fosc/12 MDT10P432P11 MDT10P432S11 MDT10P432 S31-S38 mdt*10P432

    MDT2010

    Abstract: 3.0 N1
    Text: MDT2010 JE 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology combines higher speeds and smaller size with the low power and high noise immunity of CMOS. On chip memory system includes 1.0 K(for MDT2010) bytes of ROM, and 32 bytes of


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    PDF MDT2010 MDT2010) MDT2010 3.0 N1

    MDT10P41A1P

    Abstract: 200H MDT10P41A1
    Text: MDT10P41A1 1. 概述 这个基于 EPROM 的 8 位控制器是一个集高 速体积小、低功耗和抗高噪声一体的静态 CMOS 芯片。内部 RC 振荡器。 它包括 1K EPROM 和 31 字节静态 RAM。 2. 特点 集成 CMOS 静态设计方案


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    PDF MDT10P41A1 MDT10P41A1P MDT10P41A1S 200H MDT10P41A1

    MDT10P05

    Abstract: IC TTL 4700
    Text: MDT10P05 BG 1.概述 这个 8 位基本内存控制器是一个集高速体 积小、低功耗和抗高噪声一体的静态 CMOS 芯片。它包括 0.5K ROM 和 32 字节静态 RAM。 四种可选振荡器起始定时器定时时间:150 s,20ms,40ms,80ms


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    PDF MDT10P05 s20ms40ms80ms MDT10P05 20MHz 200ns IC TTL 4700

    Untitled

    Abstract: No abstract text available
    Text: MDT2030 u 1. General Description 4 oscillator start-up time can be selected by programming option: 150 µs, 20 ms, 40 ms, 80 ms This ROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve high u speed, small size, the low power and high noise


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    PDF MDT2030 MDT2030

    MDT10P432

    Abstract: No abstract text available
    Text: MDT10P432 1. General Description relative addressing modes Power-on Reset This 8-bit Micro-controller with built-in carrier Internal RC 432K, 440K, 455K, 480KHz generator uses a fully static CMOS technology to select in option. achieve high speed, small size, low power and


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    PDF MDT10P432 480KHz 455KHz MDT10P432

    MDT2010

    Abstract: 200H 20MHZ S20MS MDT2010JG K870 6AR5
    Text: MDT2010 JG ㆒概述 这个 8 位基本内存控制器是一个集高速、 体积小、低功耗和抗高噪声一体的静态 CMOS 芯片。它包括 1.0K 字节 EPROM 和 32 字节静态 RAM。 ㆓、特点 12 个 I/O 口引脚 ㆔、用途 MDT2010 的应用范围从发动机控制,高速自


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    PDF MDT2010 MDT2010 20MHz 200ns s20ms40ms80ms 10MHz 200H 20MHZ S20MS MDT2010JG K870 6AR5

    K155A

    Abstract: MDT10P20 21PC3 200H 20MHZ 400H M230A k120a 6AR5
    Text: MDT10P20 BF 一 概述 这个 8 位基于 EPROM 微控制器是由完全静态 CMOS 技术设计,集高速、体积小、低功耗和 抗高噪声一体的芯片。 内存包括 2.0K 字节 ROM 和 80 字节静态 RAM。 二、 特点 如下是关于软硬件的一些特点:


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    PDF MDT10P20 MDT10P20 20MHz 200ns 150us 10MHz K155A 21PC3 200H 20MHZ 400H M230A k120a 6AR5

    RT 8284 N

    Abstract: MDT10C65 432Ax v376
    Text: MDT10C65 1. 概述 这个 8 位基于 ROM 微控制器是由完全静态 CMOS 技术设计,集高速体积小、低功耗和抗 高噪声一体的芯片。 内存包括 4.0K 字节 ROM 和 192 字节静态 RAM。 MDT10C65 的应用范围从发动机控制,高速自


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    PDF MDT10C65 RT 8284 N MDT10C65 432Ax v376

    100S

    Abstract: DSP96002
    Text: APPENDIX A INSTRUCTION SET DETAILS A.1 INTRODUCTION This appendix contains detailed information about each instruction defined in the DSP96002 instruction set. They are arranged in alphabetical order. A.2 ADDRESSING MODES Addressing modes are categorized by the ways in which they may be used. The following classifications


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    PDF DSP96002 100S

    LA-1911

    Abstract: foxconn RTL8101L prescott 800 schematic Socket AM2 Compal Electronics isl6247 compal
    Text: A B C D E 1 1 SAPPORO 150 DAL00 2 2 LA-1911 REV1.0 Schematic Desktop Prescott/Northwood uFCPGA-478 CPU 3 3 Springdale(865PE)+ICH5+nVIDIA NV34M(64MB VRAM) 2003-08-06 4 4 Title THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


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    PDF DAL00) LA-1911 uFCPGA-478 865PE) NV34M LA-1911 NumbeC812 SI9182DH foxconn RTL8101L prescott 800 schematic Socket AM2 Compal Electronics isl6247 compal

    000-3FF

    Abstract: MDT10C55B
    Text: MDT10C55B 1. General Description Power-on Reset Power edge-detector Reset This ROM-Based 8-bit micro-controller uses a fully Sleep Mode for power saving static CMOS technology process to achieve higher 5 types of oscillator can be selected by speed programming option:


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    PDF MDT10C55B 000-3FF MDT10C55B

    MDT10P05

    Abstract: No abstract text available
    Text: MDT10P05 BG 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS design technology combines higher speeds and smaller size with the low power and high noise immunity. On chip memory system includes 0.5 K words of ROM, and 32 bytes of static


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    PDF MDT10P05 14-bit

    MDT10P55B1S

    Abstract: MDT10P55B1P mdt10p55b3p MDT10P55B 000-3FF
    Text: MDT10P55B u Power-on Reset u Power edge-detector Reset This EPROM-Based 8-bit micro-controller uses a fully u Sleep Mode for power saving static CMOS technology process to achieve higher u 5 types of oscillator can be selected by 1. General Description speed


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    PDF MDT10P55B 600uA 1000ns MDT10P55B1S MDT10P55B1P mdt10p55b3p MDT10P55B 000-3FF

    electronic power generator using transistor projects

    Abstract: fzh 125 1014N
    Text: ANAL9<SVE_ _ INTEGRATED C IRCUTTR SEMI—CUSTOM 20 V U N SEMI-CUSTOM I C I P DESIGN COMPONENTS ARRAY l O O O UNICIP 1000 is a standard array dedicated to custom original or model based projects. IC’s like; TCA 520N, FZH 100 series, 0U 1010N, 0U 1011, 0 340D or 0U 1014N are processed on UNICIP 1000 chip.


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    PDF 1010N, 1014N 200mA) electronic power generator using transistor projects fzh 125

    Untitled

    Abstract: No abstract text available
    Text: D-Sub HARTING DIN 41 652 • MIL-C-24 308 • IEC 807 Number of contacts 9-50 Solder buckets No. of contacts Identification Performance Levels | Part No. Performance Level Performance Level 3 2 Explanations page 6 | Other performance levels on request Male connector


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    PDF MIL-C-24 000042b

    Lumberg 3623 03

    Abstract: Lumberg 3623 06
    Text: A lumberg Macromodul RAST 5 -Steckverbinder, 5,0 mm Macromodul (RAST 5) connectors, 5.0 mm • Connecteurs Macromodul, Standard RAST 5,0 mm 3623 Indirekter Steckverbinder, RAST 5-Standard, in Schneid-Klemmtechnik (SKT), AnschluRquerschnitte 0,50 - 0,75 mm2,


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    PDF 5bl5235 Lumberg 3623 03 Lumberg 3623 06

    Untitled

    Abstract: No abstract text available
    Text: D-Sub DIN 41 652 • MIL-C-24 308 • IEC 807 HART1NG Number of contacts 9-50 Solder pins, straight No. of contacts Identification Performance Levels Explanations page 6 Other performance levels on request Part No. ► Performance Level Performance Level 3


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    PDF MIL-C-24 000042b

    Untitled

    Abstract: No abstract text available
    Text: D-Sub DIN 41 652 • MIL-C-24 308 • IEC 807 No. of contacts Identification Performance Levels Explanations page 6 Other performance levels on request Male connector - angled solder pins tinned metal shell with dimples HART1NG Part No. ► Performance Level


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    PDF MIL-C-24 000042b

    wiring diagram relay

    Abstract: KAQW210TSB CMA RELAY 001 24 TI-112 AGT relay relay 20v, 100ohm
    Text: PRODUCT SPECIFICATION cosmo PHOTO 5MOS RELAYS: KAQW210TSB ELECTRONICS CO.,LTD. SHEET 1 OF 10 OUTSIDE DIMENSION : Unit:mm Tolerance:! 0.2 mm • Turn on/Turn off time Input 1 FORM A NORMALLY OPEN - 9 0 % 10« Output - I •- — *7


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    PDF KAQW210TSB 130mA 500mW wiring diagram relay KAQW210TSB CMA RELAY 001 24 TI-112 AGT relay relay 20v, 100ohm

    V212S

    Abstract: v212 KAQV212S
    Text: cosmo High Voltage, Solid State Relay-MOSFET Output KAQV212S UL 1577/ UL 508 File NO.E108430 , Fl EN60950 (File NO.FI13698) Features KAQV212S 1. Normally Open, Single Pole Single Throw o 2. Control 60VAC or DC Voltage 3. Switch 400mA Loads cosmo V212S Date Code


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    PDF KAQV212S E108430) EN60950 FI13698) 60VAC 400mA 00V/ms 1500VACrms 400mA 500mW V212S v212 KAQV212S