Emitter
Abstract: APG2C1-1030
Text: APG2C1-1030 IR High Power single chip LED APG2C1-1030 is a GaAlAs based, high power 1030 nm single chip LED in standard emitter package for general application. Specifications • • • • • Structure: GaAlAs Peak Wavelength: 1030 nm Optical Output Power: typ. 60 mW
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APG2C1-1030
APG2C1-1030
Emitter
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J264
Abstract: No abstract text available
Text: ITC1100 1000 WATT, 50V, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55SW, Style 1 Common Base The ITC1100 is a common base bipolar transistor. It is designed for pulsed interrogator systems in the frequency band of 1030 MHz. The device has gold
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ITC1100
ITC1100
1030MHz,
J264
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Untitled
Abstract: No abstract text available
Text: 1011LD110 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QZ-1 Common Source The 1011LD110 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110 Wpk of RF power from 1030 to 1090
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1011LD110
55QZ-1
1011LD110
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1030MHz-1090MHz
Abstract: No abstract text available
Text: 10502 500 Watts, 50 Volts, Pulsed Avionics 1030 / 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55SM Common Base The 10502 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030/1090 MHz, with the pulse width
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25oC1
1030MHz
1090MHz
1030MHz-1090MHz
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transistor DF 50
Abstract: transistor 1000W 1030mhz 1000W TRANSISTOR ITC1100 1000W TRANSISTOR POWER
Text: R.1.120799 ITC1100 1000 WATT, 50V, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55SW, Style 1 Common Base The ITC1100 is a common base bipolar transistor. It is designed for pulsed interrogator systems in the frequency band of 1030 MHz. The device has gold
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ITC1100
ITC1100
1030MHz,
transistor DF 50
transistor 1000W
1030mhz
1000W TRANSISTOR
1000W TRANSISTOR POWER
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1030MHz-1090MHz
Abstract: 1030mhz
Text: 10502 500 Watts, 50 Volts, Pulsed Avionics 1030 / 1090 MHz GENERAL DESCRIPTION CASE OUTLINE 55SM Common Base The 10502 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030/1090 MHz, with the pulse width
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25oC1
1030MHz
1090MHz
1030MHz-1090MHz
1030mhz
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TCS1200
Abstract: 55TU-1
Text: TCS1200 1200 Watts, 53 Volts Pulsed Avionics at 1030 MHz PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55TU-1 The TCS1200 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty
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TCS1200
55TU-1
TCS1200
55TU-1
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1030
Abstract: MDS170L 1030 PULSED
Text: MDS170L 170 Watts, 36 Volts, Pulsed Avionics 1030/1090 MHz GENERAL DESCRIPTION The MDS170L is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030 - 1090 MHz. The transistor includes input and output prematch for broadband performance. The
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MDS170L
MDS170L
25oC2
1030
1030 PULSED
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1011LD300
Abstract: "RF MOSFET" 300W
Text: 1011LD300 300 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QM Common Source The 1011LD300 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 300 Wpk of RF power from 1030 to 1090
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1011LD300
1011LD300
"RF MOSFET" 300W
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f-1030-1090
Abstract: No abstract text available
Text: 1011LD110 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QZ-1 Common Source The 1011LD110 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110 Wpk of RF power from 1030 to 1090
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1011LD110
1011LD110
55QZ-1
f-1030-1090
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Untitled
Abstract: No abstract text available
Text: 1011LD200 200 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QX-1 Common Source The 1011LD200 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 200 Wpk of RF power from 1030 to 1090
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1011LD200
1011LD200
55QX-1
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Untitled
Abstract: No abstract text available
Text: 1011LD300 300 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QM Common Source The 1011LD300 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 300 Wpk of RF power from 1030 to 1090
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1011LD300
1011LD300
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Untitled
Abstract: No abstract text available
Text: 1011LD200 200 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QX-1 Common Source The 1011LD200 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 200 Wpk of RF power from 1030 to 1090
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1011LD200
55QX-1
1011LD200
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df transistor
Abstract: 55KT
Text: TPR 500A 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 500A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven
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25oC2
1750ower
df transistor
55KT
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"RF MOSFET" 300W
Abstract: No abstract text available
Text: 1011LD300 300 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QM Common Source The 1011LD300 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 300 Wpk of RF power from 1030 to 1090
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1011LD300
1011LD300
1011L300
"RF MOSFET" 300W
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1011LD200
Abstract: 1090MHZ
Text: 1011LD200 200 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QX-1 Common Source The 1011LD200 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 200 Wpk of RF power from 1030 to 1090
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1011LD200
55QX-1
1011LD200
1090MHZ
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1011LD110
Abstract: No abstract text available
Text: 1011LD110 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION CASE OUTLINE 55QZ-1 Common Source The 1011LD110 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110 Wpk of RF power from 1030 to 1090
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1011LD110
55QZ-1
1011LD110
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TPR500
Abstract: No abstract text available
Text: TPR 500 500 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 500 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The
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25oC2
TPR500
TPR500
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TPR400
Abstract: max7540
Text: TPR 400 400 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz GENERAL DESCRIPTION The TPR 400 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. The
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25oC2
TPR400
TPR400
max7540
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df transistor
Abstract: 1000W TRANSISTOR 1030mhz ITC1000 DF 1 transistor 1000W
Text: R.A.P.990305-BEHRE ITC1000 1000 WATT, 50V, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55SW, Style 1 Common Base The ITC1000 is a common base bipolar transistor. It is designed for pulsed interrogator systems in the frequency band of 1030 MHz. The device has gold
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990305-BEHRE
ITC1000
ITC1000
1030MHz,
df transistor
1000W TRANSISTOR
1030mhz
DF 1
transistor 1000W
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transistor A 1030
Abstract: 1030 PULSED
Text: MDS550L 550 Watts, 45 Volts Pulsed Avionics at 1030/1090 MHz PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST-1 Common Base The MDS550L is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 and 1090 MHz, with the pulse width and
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MDS550L
MDS550L
55ST-1
transistor A 1030
1030 PULSED
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1458
Abstract: TCS600
Text: R.1.A.992005-HERICK TCS600 600 Watts, 50 Volts, Pulsed Avionics 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The TCS600 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030/1090 MHz, with the
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992005-HERICK
TCS600
TCS600
Volta25
1458
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j329
Abstract: J3-29 duroid 5880 20AWG TPR400A J251
Text: TPR400A 400 Watts, 50 Volts, Pulsed Avionics 1030-1090 MHz GENERAL DESCRIPTION The TPR400A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization for proven highest MTTF. Low
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TPR400A
TPR400A
25oC2
150oC
200oC
20AWG,
10mils
j329
J3-29
duroid 5880
20AWG
J251
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Untitled
Abstract: No abstract text available
Text: Preliminary PTVA101K02EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz Description The PTVA101K02EV LDMOS FET is designed for use in power ampliier applications in the 1030 MHz / 1090 MHz frequency band.
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PTVA101K02EV
PTVA101K02EV
H-36275-4
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