Ultra fast diode
Abstract: No abstract text available
Text: Advance Technical Information IXYH20N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 17A 4.0V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXYH20N120C3D1
IC110
108ns
O-247
IF110
062in.
Ultra fast diode
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IXYP20N120C3
Abstract: No abstract text available
Text: Advance Technical Information IXYP20N120C3 IXYH20N120C3 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 20A 4.0V 108ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYP20N120C3
IXYH20N120C3
IC110
O-220
108ns
O-247
20N120C3
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Untitled
Abstract: No abstract text available
Text: IXYA20N120C3HV IXYP20N120C3 IXYH20N120C3 1200V XPTTM GenX3TM IGBTs High-Speed IGBT for 20-50 kHz Switching VCES = IC110 = VCE sat tfi(typ) = 1200V 20A 3.4V 108ns TO-263HV (IXYA) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYA20N120C3HV
IXYP20N120C3
IXYH20N120C3
IC110
108ns
O-263HV
20N120C3
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYH20N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 17A 4.0V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IC110
IXYH20N120C3D1
108ns
O-247
IF110
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) IXYP20N120C3 IXYH20N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 20A 4.0V 108ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IC110
IXYP20N120C3
IXYH20N120C3
108ns
O-220
20N120C3
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Untitled
Abstract: No abstract text available
Text: 1200V XPTTM IGBT GenX3TM w/ Diode IXYT20N120C3D1HV High-Speed IGBT for 20-50 kHz Switching VCES = IC110 = VCE sat tfi(typ) = 1200V 17A 3.4V 108ns TO-268HV Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M
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IXYT20N120C3D1HV
IC110
108ns
O-268HV
IF110
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYJ20N120C3D1 (Electrically Isolated Tab) = = ≤ = 1200V 7A 4.0V 108ns High-Speed IGBT for 20-50 kHz Switching ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings
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IC110
IXYJ20N120C3D1
108ns
O-247TM
E153432
IF110
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PDF
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IXYH20N120C3D1
Abstract: No abstract text available
Text: IXYH20N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat tfi(typ) = High-Speed IGBT for 20-50 kHz Switching 1200V 17A 3.4V 108ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M
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IXYH20N120C3D1
IC110
108ns
O-247
IF110
IXYH20N120C3D1
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g20n60
Abstract: HGT1S20N60C3S9A G20N60C3 HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 RHRP3060 TA49178 TB334 ic2545a
Text: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of
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HGTG20N60C3,
HGTP20N60C3,
HGT1S20N60C3S
150oC.
108ns
150oC
g20n60
HGT1S20N60C3S9A
G20N60C3
HGT1S20N60C3S
HGTG20N60C3
HGTP20N60C3
RHRP3060
TA49178
TB334
ic2545a
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20N120C3
Abstract: No abstract text available
Text: IXYJ20N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat tfi(typ) = (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M VGES VGEM
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IXYJ20N120C3D1
IC110
IF110
O-247TM
E153432
20N120C3
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EM635327Q-10
Abstract: EtronTech EM635327Q EM635327Q-12 EM635327R-10 EM635327R-12 EM635327TQ-10 EM635327TQ-12 EM635327TR-10 EM636327TR-12 EM635327
Text: EtronTech EM635327 256K x 32 High Speed Synchronous Graphics DRAM SGRAM Preliminary (10/'97) Features • • • • • • • • • • • Fast access time from clock: 6.5/7.0/7.5/8.5ns Fast clock rate: 125/110/100/83MHz Fully synchronous operation
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EM635327
125/110/100/83MHz
32-bit
cycles/16ms
EM635327Q-10
EtronTech EM635327Q
EM635327Q-12
EM635327R-10
EM635327R-12
EM635327TQ-10
EM635327TQ-12
EM635327TR-10
EM636327TR-12
EM635327
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toshiba toggle mode nand
Abstract: Toshiba MLC flash hynix nand flash nand flash HYNIX MLC hynix MLC nand flash toggle mode nand samsung hynix nand PROGRAMMING reset nand flash HYNIX PL-2520 flash to mp3
Text: PL-2520 Chip Rev A Advanced Hi-Speed USB Flash Disk Controller Product Datasheet Document Revision: 1.1 Document Release: December 25, 2008 Prolific Technology Inc. 7F, No. 48, Sec. 3, Nan Kang Rd. Nan Kang, Taipei 115, Taiwan, R.O.C. Tel: 886-2-2654-6363
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PL-2520
pl2520
LQFP48pin
PL-2520
LQFP48
TQFP48pin
TQFP48
toshiba toggle mode nand
Toshiba MLC flash
hynix nand flash
nand flash HYNIX MLC
hynix MLC nand flash
toggle mode nand samsung
hynix nand PROGRAMMING
reset nand flash HYNIX
flash to mp3
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYJ20N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) High-Speed IGBT for 20-50 kHz Switching Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IF110
IXYJ20N120C3D1
108ns
O-247TM
E153432
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g20n60c3d
Abstract: g20n60c3d equivalent HGTG20N60C3D LD26 RHRP3060 TA49063 TA49178 g20n60 HGTG20N60C3
Text: HGTG20N60C3D Data Sheet January 2000 45A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input
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HGTG20N60C3D
HGTG20N60C3D
150oC.
TA49178.
RHRP3060
TA49063)
g20n60c3d
g20n60c3d equivalent
LD26
RHRP3060
TA49063
TA49178
g20n60
HGTG20N60C3
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2901c
Abstract: amd 2901 alu D-40 i5 instruction CD004110 am2902
Text: 3L06ZUJV/aL06ZUJV A m 2 9 0 1 B /A m 2 9 0 lC Four-Bit Bipolar Microprocessor Slice DISTINCTIVE CHARACTERISTICS L e ft/rig h t shift independent of ALU Add and shift operations take only one cycle. Four status flags Carry, overflow, zero, and negative. Flexible data source selection ALU data is selected from five source ports fo r a total of
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Am2901B/Am290
Am2901s
Am2901
Am2900
01G56B
2901c
amd 2901 alu
D-40
i5 instruction
CD004110
am2902
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PDF
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VG46VS8325
Abstract: ic 3645 sh xaxs
Text: VG46VS8325 131,072 x 32 x 2-Bit CM O S Synchronous Graphic RA M Preliminary Pin Assignment Top View Features • Fast access time from clock: 8/1Ons • Fast clock rate: 100/83MHz • Fully synchronous operation • Internal pipelined architecture • Dual internal banks(128K x 32-bit x 2-bank)
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VG46VS8325
100/83MHz
32-bit
cycles/16ms
100-pin
1G5-0057
IG5-0057
ic 3645 sh
xaxs
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PDF
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relay 12v 1c/o
Abstract: 12V 1C/O relay G20N60C3 Transistor No C110 transistor C110 HGT1S20N60C3S9A G20N60 N-CHANNEL 45A TO-247 POWER MOSFET TA49178 HGTG20N60C3
Text: HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S in t e r r ii J a n u a ry . m Data Sheet 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of
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TA49178.
HGTG20N60C3
O-247
G20N60C3
relay 12v 1c/o
12V 1C/O relay
G20N60C3
Transistor No C110
transistor C110
HGT1S20N60C3S9A
G20N60
N-CHANNEL 45A TO-247 POWER MOSFET
TA49178
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Untitled
Abstract: No abstract text available
Text: KM4132G271 CMOS SGRAM 128K X 32Bit X 2Bank Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION • • • • The KM4132G271 is 8,388,608 bits synchronous high data rate Dynamic RAM organized as 2 x 131,072 words by 32 bits, fabricated with SAMSUNG'S high performance CMOS
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KM4132G271
32Bit
KM4132G271
D21L11
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PDF
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samsung CL21
Abstract: 2G271
Text: KM4132G271 ELECTRONICS Graphic Memory 128K x 32Bit x 2Bank Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION • • • • The KM4132G271 is 8,388,608 bits synchronous high data rate Dynamic RAM organized as 2 x 131,072 words by 32 bits, fabricated with SAMSUNG'S high performance
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KM4132G271
32Bit
KM4132G271
samsung CL21
2G271
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PDF
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concurrent RDRAM 72
Abstract: Direct RDRAM clock generator RDRAM Reference Manual pin diagram ic 7424 concurrent rdram
Text: 4-Megabit RDRAM 512K x 9 Description System Benefits The 4-M egabit Rambus DRAM (RDRAM™) is an extremely-high-speed CM OS DRAM organized as 512K words by 9 bits and capable of bursting up to 256 bytes of data at 2 nanoseconds per byte. The use of Rambus Signaling Logic (RSL) technology makes this
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ED-7424)
concurrent RDRAM 72
Direct RDRAM clock generator
RDRAM Reference Manual
pin diagram ic 7424
concurrent rdram
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PDF
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FRL-264 D048
Abstract: D058
Text: TO SH IBA THLY648031FG-10.-12 TENTATIVE TO SH IBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608 W O R D S X 6 4 BIT SYNCHRONOUS D RA M MODULE DESCRIPTION The THLY648031FG is a 8,388,608 words by 64 bits Synchronous DRAM module which assembled 8 pcs of TC59S6408FT on the printed circuit board.
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THLY648031FG-10
THLY648031FG
TC59S6408FT
108ns
484mW
208mW
08t79AlHl
FRL-264 D048
D058
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PDF
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l0830
Abstract: LC83010 PGA100 sick acc 18.432MHZ oscillator
Text: a frJ -K No. EN3606 / No. 3608 LC83010 SA iYO CMOS LSI' AU D IO D IG IT A L SIGNAL PROCESSOR < 1, Overview The LC83010 Is a single-chlp digital signal processor DSP , It is designed for use in the application fields such as a digital processing of audio signals.
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EN3606
LC83010
LC83010
L083010
l0830
PGA100
sick
acc 18.432MHZ oscillator
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary KM4132G271 CMOS SGRAM 128K x 32 x 2Bit Synchronous Graphic RAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply The KM4132G271 is 8,388,608 bits synchronous high data • LVTTL com patible with multiplexed address rate Dynamic RAM organized as 2 x 131,072 words by 32
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KM4132G271
100pin
20x14
2113c
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PDF
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A9 npn
Abstract: No abstract text available
Text: NN5216165 series CMOS 16Mbit 524,288 words x 16 bits x 2 banks Synchronous Dynamic RAM Preliminary Specification DESCRIPTION This product is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) organized as 524,288 words x16bits x 2banks. This product features a fully synchronous operation referenced to a positive edge of dock input. The read/write
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NN5216165
16Mbit
x16bits
256words)
50-pin
NNS216165
NN5216165XX
50pin
16Mbits
A9 npn
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PDF
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