10N70
Abstract: MOSFET 700V 10A 10N70L mosfet 350v 10A 700v 10A mosfet 10N70L-TF1-T 700V mosfet driver
Text: UNISONIC TECHNOLOGIES CO., LTD 10N70 Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a
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10N70
10N70
O-220F
O-220F1
QW-R502-572
MOSFET 700V 10A
10N70L
mosfet 350v 10A
700v 10A mosfet
10N70L-TF1-T
700V mosfet driver
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 10N70Z-Q Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N70Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a
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10N70Z-Q
10N70Z-Q
10N70ZL-TF1-T
10N70ZG-TF1-T
QW-R502-B20
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N70Z Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N70Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a
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10N70Z
10N70Z
QW-R502-935
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Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N70-C Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N70-C is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a
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10N70-C
10N70-C
10N70L-TF3-Tat
QW-R502-A80
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N70 Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a
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10N70
10N70
O-220F
O-220F1
QW-R502-572
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Untitled
Abstract: No abstract text available
Text: 10N70 UNISONIC TECHNOLOGIES CO., LTD Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220F The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a
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10N70
O-220F
10N70
O-220F1
QW-R502-572
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N70K Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N70K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.
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10N70K
10N70K
10N70KL-TF1-T
10N70KG-TF1-T
O-220F1
QW-R502-A69
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N70-Q Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220F The UTC 10N70-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a
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10N70-Q
O-220F
10N70-Q
O-220F1
QW-R502-967.
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Untitled
Abstract: No abstract text available
Text: 10N70R/P RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description 10N70 series are specially designed as main switching devices for
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AP10N70R/P
AP10N70
265VAC
O-220
O-262
O-220
10N70R
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10N70P
Abstract: No abstract text available
Text: 10N70R/P-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 650V RDS ON 0.6Ω ID G 10A S Description 10N70 series are specially designed as main switching devices for
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AP10N70R/P-A
AP10N70
265VAC
O-220
O-262
O-220
10N70P
10N70P
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Untitled
Abstract: No abstract text available
Text: 10N70W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description 10N70 series are specially designed as main switching devices for
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AP10N70W
AP10N70
265VAC
10N70W
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Untitled
Abstract: No abstract text available
Text: 10N70W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 600V RDS ON 0.6 ID G 10A S Description 10N70 series are specially designed as main switching devices for
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AP10N70W
AP10N70
265VAC
10N70W
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10N70
Abstract: No abstract text available
Text: 10N70I-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D BVDSS RDS ON Fast Switching Characteristic Simple Drive Requirement ID G 650V 0.62 10A S Description Advanced Power MOSFETs from APEC provide the designer with
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AP10N70I-A
O-220CFM
O-220CFM
10N70I
10N70
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g10a
Abstract: marking codes transistors SSs
Text: 10N70S RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 600V RDS ON 0.6Ω ID G 10A S Description 10N70S is specially designed as main switching devices for universal
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AP10N70S
AP10N70S
265VAC
O-263
O-263
10N70S
g10a
marking codes transistors SSs
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. 10N70W-HF-3 N-channel Enhancement-mode Power MOSFET 100% Avalanche-Tested D Simple Drive Requirement Fast Switching Performance G RoHS-compliant, halogen-free BV DSS 600V R DS ON 0.6Ω ID 10A S Description Advanced Power MOSFETs from APEC provide the designer with the best
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AP10N70W-HF-3
AP10N70W-HF-3
AP10N70
10N70W
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10N70
Abstract: 68A40
Text: 10N70I-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 650V RDS ON 0.62Ω ID G 10A S Description Advanced Power MOSFETs from APEC provide the designer with
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AP10N70I-A
O-220CFM
O-220CFM
10N70I
10N70
68A40
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Untitled
Abstract: No abstract text available
Text: 10N70S RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 600V RDS ON 0.6 ID G 10A S Description 10N70S is specially designed as main switching devices for universal
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AP10N70S
AP10N70S
265VAC
O-263
O-263
10N70S
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Untitled
Abstract: No abstract text available
Text: 10N70R/P-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET 100% Avalanche Test D Fast Switching Characteristic Simple Drive Requirement BVDSS 650V RDS ON 0.6 ID G 10A S Description 10N70 series are specially designed as main switching devices for
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AP10N70R/P-A
AP10N70
265VAC
O-220
O-262
O-220
10N70P
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ssh10n70
Abstract: 10N70
Text: N-CHANNEL POWER MOSFETS 10N70 FEATURES • • • • • • • T O -3 P Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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SSH10N70
10N70
ssh10n70
10N70
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