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    10E422 Search Results

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    10E422 Price and Stock

    Rochester Electronics LLC CY10E422L-7DC

    IC SRAM 1KBIT PARALLEL 24SBDIP
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    DigiKey CY10E422L-7DC Bulk 18
    • 1 -
    • 10 -
    • 100 $17.19
    • 1000 $17.19
    • 10000 $17.19
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    Rochester Electronics LLC CY10E422L-7KCQ

    IC SRAM 1KBIT PARALLEL 24CFLATPK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY10E422L-7KCQ Bulk 27
    • 1 -
    • 10 -
    • 100 $11.38
    • 1000 $11.38
    • 10000 $11.38
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    Rochester Electronics LLC CY10E422L-7JCQ

    IC SRAM 1KBIT PARALLEL 28PLCC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY10E422L-7JCQ Bulk 27
    • 1 -
    • 10 -
    • 100 $11.38
    • 1000 $11.38
    • 10000 $11.38
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    Vishay Intertechnologies PTN1010E4220BST1

    Res Thin Film 1010 422Ohm 0.1% 1/2W ?25ppm/?C Molded T/R - Tape and Reel (Alt: PTN1010E4220BST1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas PTN1010E4220BST1 Reel 22 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.6065
    • 10000 $1.1303
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    Vishay Intertechnologies PTN1010E4222BST1

    Res Thin Film 1010 42.2kOhm 0.1% 1/2W ?25ppm/?C Molded T/R - Tape and Reel (Alt: PTN1010E4222BST1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas PTN1010E4222BST1 Reel 22 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.6065
    • 10000 $1.1303
    Buy Now

    10E422 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: M^E D MATRA M H S „ Preview • 5ûbô4Sb = *^ = B ^ U 0005505 H S M=]5 ■ M M H S _ IIIÌM ÌIII January 1991 M 1 0 E 4 2 2 /M 1 0 0 E 4 2 2 DATA SHEET 256 x 4 ECL STATIC RAM FEATURES 256 X 4 BITS ORGANIZATION ULTRA HIGH SPEED/STANDARD POWER


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    PDF KH/10 M10E422 M100E422 M10E422/100E422 G002S10 M10E422/100E422 10E422 10E422 100E422 10EspectoSonssupporttoth10Kand10KHcom

    Untitled

    Abstract: No abstract text available
    Text: ^ 10E422 CY100E422 » ss f^YPPP’^c; • 256 x 4-bit organization • Ultra high speed/standard power — tAA = 3.5 ns — U : e = 220 niA • Low-power version — tAA = 5 ns — I e e " 150 inA • Both 10KH/10K- and 100K-compatible I/O versions • 10K/10KH military version


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    PDF CY10E422 CY100E422 10KH/10K- 100K-compatible 10K/10KH CY10E422L-7LC CY10E422Lâ CY100E422â CY100E422Lâ

    Untitled

    Abstract: No abstract text available
    Text: ^ ^' 3 w ' SEm!cONDUCTOR 256 x 4 ECL Static RAM The four independent active LOW block select B inputs control memory selection and allow for memory expansion and re­ configuration. Each block select (Bi through B 4 ), when active, turns off the cor­ responding output and memory block. The


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    PDF 10KH/10K- 100K-compatibie 10K/10KH CY10E422 CY100E422 CY10E422L-- 10E422L--

    TR10E

    Abstract: CY100E422L5DC C4221
    Text: 10E422 _CY100E422 SEMCONDtCTOR • Open emitter output for ease of memory expansion Features • 256 x 4-bit organization • Industry-standard pinout • Ultra high speed/standard power — tA A = 3 ns, tA B S = 2 ns — IEE = 220 mA


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    PDF CY10E422 CY100E422 10KH/10K 10K/10KH 100Kcompatible. CY100E422-31X' CYI00E422- CY100E422-3YC CY100E422-5YC TR10E CY100E422L5DC C4221

    Untitled

    Abstract: No abstract text available
    Text: 10E422 CY100E422 i s ^ Y p p p c ;< ^ • ■ ■ ^ s \ # f SEMICONDUCTOR Features • Open em itter output for ease of memory expansion • Ultra high speed/standard power — tAA = 3.5 ns • Industry-standard pinout — Iee = 220 mA Functional Description


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    PDF CY10E422 CY100E422 10KH/10K- 10K/10KH 10E422L--7LC 10E422L--7KM 100E422--3 100E422--5D

    DIC20

    Abstract: CY10E422L-5DMB
    Text: 10E422 S i - ~ CY1 = SL- SEMICONDUCTOR Features 256 x 4 ECL Static RAM • On-chip voltage compensation for improved noise margin • Open emitter output for ease of memory expansion • Industry-standard pinout • 256 x 4-bit organization • Ultra high speed/standard power


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    PDF CY10E422 CY10E422L-- 10E422L-- DIC20 CY10E422L-5DMB

    CY10E422L-5KMB

    Abstract: CY10E422L-5DMB CY100E422L5DC CY10E422L7DC CY10E422 CY100E422 CY10E422L5JC CY10E422L-5DC CY100E42235KC 10e422
    Text: _ 10E422 CY100E422 "-• 256 x 4 ECL Static RAM CYPRESS SEMICONDUCTOR Features — t^A ~ 3*5 ns • On-ehip voltage compensation for improved noise margin • Open emitter output for ease of memory expansion • Industry-standard pinout — I e e = 220 mA


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    PDF CY10E422 CY100E422 10KH/10K- 10K/10KH CY100E422â 24-Lead 400-Mil) CY10E422L-5KMB CY10E422L-5DMB CY100E422L5DC CY10E422L7DC CY10E422L5JC CY10E422L-5DC CY100E42235KC 10e422

    IR 10e

    Abstract: No abstract text available
    Text: Preview llllìììlll I v T M DATA SHEET September 1989 M M 1 0 E422/M M 10 0 E422 256 x 4 ECL STATIC RAM FEATURES . . . 256 X 4 BITS ORGANIZATION ULTRA HIGH SPEED/STANDARD POWER - tA A = 3 ns, tA B S = 2 ns - 1EE = 220 mA LOW POWER VERSION - tAA = 5 ns - 1EE = 150 mA


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    PDF KH/10 MM10E422 MM100E422 MM10E422/100E422 10E422 10E422 100E422 IR 10e

    Untitled

    Abstract: No abstract text available
    Text: 10E422 CY100E422 : J P ' CYPRESS — — SEMICONDUCTOR 256 x 4 ECL Static RAM • Open em itter output for ease of memory expansion Features • 256 x 4 -b it organization • • Ultra high speed/standard power Industry-standard pinout F unctional D escrip tion


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    PDF CY10E422 CY100E422 10E422L-7K 10E422L-7D 10E422L-7YM 100E422-3LC CY100E422-3Y CY100E422-3K 100E422-5LC