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    10H150C Search Results

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    10H150C Price and Stock

    WeEn Semiconductor Co Ltd WN3S10H150CXQ

    DIODE ARR SCHOTT 150V 5A TO220F
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    DigiKey WN3S10H150CXQ Tube 5,996 1
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    Avnet Americas WN3S10H150CXQ Tube 8 Weeks 6,000
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    Mouser Electronics WN3S10H150CXQ
    • 1 $0.45
    • 10 $0.375
    • 100 $0.272
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    Newark WN3S10H150CXQ Bulk 1
    • 1 $0.754
    • 10 $0.61
    • 100 $0.427
    • 1000 $0.333
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    WeEn Semiconductor Co Ltd WN3S10H150CQ

    DIODE ARR SCHOTT 150V 5A TO220AB
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    DigiKey WN3S10H150CQ Tube 5,939 1
    • 1 $0.77
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    Avnet Americas WN3S10H150CQ Tube 8 Weeks 6,000
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    Mouser Electronics WN3S10H150CQ
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    Newark WN3S10H150CQ Bulk 1
    • 1 $0.704
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    • 1000 $0.311
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    EBV Elektronik WN3S10H150CQ 9 Weeks 1,000
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    PanJit Group MBR10H150CT_T0_00001

    ULTRA LOW IR SCHOTTKY BARRIER RE
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    DigiKey MBR10H150CT_T0_00001 Tube 1,998 1
    • 1 $1.27
    • 10 $0.796
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    • 1000 $0.37143
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    Ozdisan Elektronik MBR10H150CT_T0_00001
    • 1 $0.53348
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    • 100 $0.4639
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    onsemi MBRF10H150CTG

    DIODE ARR SCHOTT 150V 5A TO220FP
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    DigiKey MBRF10H150CTG Tube 76 1
    • 1 $1.31
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    Avnet Americas MBRF10H150CTG Tube 10 Weeks 1,500
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    Mouser Electronics MBRF10H150CTG 502
    • 1 $1.17
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    Newark MBRF10H150CTG Bulk 118 1
    • 1 $0.749
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    RS MBRF10H150CTG Bulk 200
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    Rochester Electronics MBRF10H150CTG 103,859 1
    • 1 $0.5961
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    • 100 $0.5603
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    Richardson RFPD MBRF10H150CTG 1,400
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    Avnet Silica MBRF10H150CTG 11 Weeks 50
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    EBV Elektronik MBRF10H150CTG 12 Weeks 50
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    Flip Electronics MBRF10H150CTG 42
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    Wuhan P&S MBRF10H150CTG 50 1
    • 1 $1.5
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    • 100 $0.96
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    Taiwan Semiconductor MBR10H150CT

    DIODE ARR SCHOT 150V 10A TO220AB
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    DigiKey MBR10H150CT Tube 3 1
    • 1 $1.12
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    Avnet Americas MBR10H150CT Tube 1,000
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    • 1000 $0.37436
    • 10000 $0.3025
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    Mouser Electronics MBR10H150CT 985
    • 1 $0.87
    • 10 $0.711
    • 100 $0.553
    • 1000 $0.382
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    10H150C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MBRS10H45CTC . MBRS10H200CTC 10.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Current 10.0 A Voltage 45 to 200 V FEATURES • Low leakage current • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency


    Original
    PDF MBRS10H45CTC MBRS10H200CTC 2011/65/EU 2002/96/EC J-STD-020, O-263AB mbrs10hctc Jul-12

    Untitled

    Abstract: No abstract text available
    Text: MBRS10H100CT thru MBRS10H200CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Ideal for automated placement - Guardring for overvoltage protection - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020


    Original
    PDF MBRS10H100CT MBRS10H200CT J-STD-020 2011/65/EU 2002/96/EC O-263AB AEC-Q101 D1309058

    Schottky

    Abstract: No abstract text available
    Text: MBRF10H100CT thru MBRF10H200CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and


    Original
    PDF MBRF10H100CT MBRF10H200CT E-326243 2011/65/EU 2002/96/EC ITO-220AB AEC-Q101 JESD22-B102 D1309015 Schottky

    Schottky

    Abstract: MBR10H200CT C0
    Text: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and


    Original
    PDF MBR10H100CT MBR10H200CT 2011/65/EU 2002/96/EC O-220AB AEC-Q101 JESD22-B102 D1308059 Schottky MBR10H200CT C0

    Untitled

    Abstract: No abstract text available
    Text: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and


    Original
    PDF MBR10H100CT MBR10H200CT 2011/65/EU 2002/96/EC O-220AB AEC-Q101 22-B102 D1308059

    GMR10H150C

    Abstract: GMR10H150CTA3R GMR10H150CTA3T GMR10H150CTB3T TO-263-2
    Text: 10H150C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER Power Discrete Description Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. Major Ratings and Characteristics HIGH JUNCTION TEMPERATURE CAPABILITY Values Units 2X5


    Original
    PDF GMR10H150C O-220AB O-263-2 O-220FPAB O-263-2 GMR10H150C GMR10H150CTA3R GMR10H150CTA3T GMR10H150CTB3T TO-263-2

    10A schottky

    Abstract: GMR10H150C GMR10H150CTA3R GMR10H150CTA3T GMR10H150CTB3T 10h150c TO-3P Jedec package outline
    Text: 10H150C 10A SCHOTTKY RECTIFIER Description Features Dual center tap Schottky rectifier designed for high frequency Switched Mode Power Supplies. „ High junction temperature capability „ Good trade off between leakage current and forward voltage drop „


    Original
    PDF GMR10H150C 220FPAB 220AB 10H150C 10max) GMR10H150C O220AB O220FPAB 10A schottky GMR10H150CTA3R GMR10H150CTA3T GMR10H150CTB3T 10h150c TO-3P Jedec package outline

    MBR10H200CT

    Abstract: 10H150CT MBR10H100CT
    Text: MBR10H100CT - MBR10H200CT Pb RoHS 10.0 AMPS. Schottky Barrier Rectifiers COMPLIANCE TO-220AB Features — — — — — — — — Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency


    Original
    PDF MBR10H100CT MBR10H200CT O-220AB O-220AB MIL-STD-750, 50mVp-p MBR10H200CT 10H150CT

    10h100c

    Abstract: MBRS10H100CT MBRS10H200CT 10H150CT
    Text: MBRS10H100CT - MBRS10H200CT Pb RoHS 10.0 AMPS. Surface Mount Schottky Barrier Rectifiers Switchmode Power Rectifiers COMPLIANCE D2PAK Features — — — — — — — — Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction


    Original
    PDF MBRS10H100CT MBRS10H200CT MIL-STD-750, 20alf WIDTH-300 50mVp-p 10h100c MBRS10H200CT 10H150CT

    Untitled

    Abstract: No abstract text available
    Text: MBRF10H100CT thru MBRF10H200CT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - UL Recognized File # E-326243 - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and


    Original
    PDF MBRF10H100CT MBRF10H200CT E-326243 2011/65/EU 2002/96/EC ITO-220AB AEC-Q101 JESD22-B102 D1309015

    10H150CT

    Abstract: No abstract text available
    Text: MBRS10H100CT - MBRS10H200CT Pb RoHS 10.0 AMPS. Surface Mount Schottky Barrier Rectifiers Switchmode Power Rectifiers COMPLIANCE D2PAK Features — — — — — — — — Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction


    Original
    PDF MBRS10H100CT MBRS10H200CT 300us 10H150CT

    Untitled

    Abstract: No abstract text available
    Text: MBRF10H100CT - MBRF10H200CT Isolated 10.0 AMPS. Schottky Barrier Rectifiers Pb RoHS Switchmode Power Rectifiers COMPLIANCE ITO-220AB Features — — — — — — — — Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction


    Original
    PDF MBRF10H100CT MBRF10H200CT ITO-220AB ITO-220AB WIDTH-300 50mVp-p

    Untitled

    Abstract: No abstract text available
    Text: MBRF10H100CT - MBRF10H200CT 10.0AMPS Isolated Schottky Barrier Rectifiers ITO-220AB Features ­ UL Recognized File # E-326243 ­ Plastic material used carriers Underwriters Laboratory Classification 94V-0 ­ Metal silicon junction, majority carrier conduction


    Original
    PDF MBRF10H100CT MBRF10H200CT ITO-220AB E-326243

    Untitled

    Abstract: No abstract text available
    Text: MBRS10H45CTC . MBRS10H200CTC 10.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Current 10.0 A Voltage 45 to 200 V FEATURES • Low leakage current • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency


    Original
    PDF MBRS10H45CTC MBRS10H200CTC O-263AB AEC-Q101 2011/65/EU 2002/96/EC J-STD-020, mbrs10hctc Jul-12

    D2PAK marking code 300

    Abstract: mbrs 10h100ct
    Text: MBRS10H100CT - MBRS10H200CT CREAT BY ART 10.0AMPS Surface Mount Schottky Barrier Rectifiers D2PAK Features — UL Recognized File # E-326854 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction


    Original
    PDF MBRS10H100CT MBRS10H200CT E-326854 D2PAK marking code 300 mbrs 10h100ct

    GMR10H150CTB3T

    Abstract: 10H150C GMR10H125C GMR10H150C GMR10H150CTA3R GMR10H150CTA3T
    Text: A Power Discrete 10H150C A MICROELECTRONICS HIGH VOLTAGE POWER SCHOTTKY RECTIFIER DESCRIPTION Dual center tap schottky rectifier designed for high frequency Switched Mode Power Supplies. Major Ratings and Characteristics High junction temperature capability


    Original
    PDF GMR10H150C O-220AB O-263-2 O-220FPAB O-263-2 GMR10H125C GMR10H150CTB3T 10H150C GMR10H125C GMR10H150C GMR10H150CTA3R GMR10H150CTA3T

    MBRS100

    Abstract: MBRS100H100CTC
    Text: MBRS10H45CTC . MBRS10H200CTC 10.0 Amp. Surface Mount High Temperature Technology Schottky Rectifier Current 10.0 A Voltage 45 to 200 V FEATURES • Low leakage current • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency


    Original
    PDF MBRS10H45CTC MBRS10H200CTC O-263AB 2011/65/EU 2002/96/EC J-STD-020, MIL-STD-750 mbrs10hctc Jul-12 MBRS100 MBRS100H100CTC

    Untitled

    Abstract: No abstract text available
    Text: MBRF10H100CT - MBRF10H200CT CREAT BY ART 10.0AMPS Isolated Schottky Barrier Rectifiers ITO-220AB Features — UL Recognized File # E-326243 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction


    Original
    PDF MBRF10H100CT MBRF10H200CT ITO-220AB E-326243 ITO-220AB MBRF10HxxCT

    MBRF10H100CT

    Abstract: MBRF10H200CT 10H150
    Text: MBRF10H100CT - MBRF10H200CT CREAT BY ART Pb 10.0AMPS Isolated Schottky Barrier Rectifiers ITO-220AB RoHS COMPLIANCE Features — UL Recognized File # E-326243 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction


    Original
    PDF MBRF10H100CT MBRF10H200CT ITO-220AB E-326243 300uS MBRF10H200CT 10H150

    MBRS10H100CT

    Abstract: MBRS10H200CT E-326854
    Text: MBRS10H100CT - MBRS10H200CT CREAT BY ART Pb 10.0AMPS Surface Mount Schottky Barrier Rectifiers D2PAK RoHS COMPLIANCE Features — UL Recognized File # E-326854 — Plastic material used carriers Underwriters Laboratory Classification 94V-0 — Metal silicon junction, majority carrier conduction


    Original
    PDF MBRS10H100CT MBRS10H200CT E-326854 300uS MBRS10H200CT E-326854

    10H150CT

    Abstract: 10H150 MBR10H100CT MBR10H200CT CAAF 10H200CT MBR10H200
    Text: E TAIWAN SEMICONDUCTOR MBR10H100CT - MBR10H200CT RoHS COMPLIANCE 10.0 AMPS. Schottky Barrier Rectifiers TO-220AB 1 vWvti/t T!T7T7- Features <• <■ <■ <■ «■ <■ Plssiic material used carries Underwriters Laboratory Classifications S4V-0 Metal silicon Junction, ma|orlty carrier conduction


    OCR Scan
    PDF MBR10H100CT MBR10H200CT O-220AB 35inm IF-10A. 12rsc 10H150CT 10H150 MBR10H200CT CAAF 10H200CT MBR10H200

    10h100ct

    Abstract: 10h100c MBRF10H100CT MBRF10H200CT
    Text: [E TAIWAN SEMICONDUC MBRF10H100CT - MBRF10H200CT Isolated 10.0 AMPS. Schottky Barrier Rectifiers RoHS ITO 220AB COMPLIANCE Features -Y- ❖ <> <§• -v- Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon junction, majority carrier conduction


    OCR Scan
    PDF MBRF10H100CT MBRF10H200CT 220AB U0-220AB MIL-STD-750, MBRF10H200CT) 10h100ct 10h100c MBRF10H200CT

    10h100c

    Abstract: No abstract text available
    Text: s TAIWAN SEMICONDUCTOR MBR10H100CT - MBR10H200CT RoHS 10.0 AMPS. Schottky Barrier Rectifiers T O -2 2 0 A B CO M PLIANCE •V.L7YI TESr&t 1 v*Vn/ì T !T O Features ❖ <■ <■ <■ <■ <■ <■ <■ ❖ <• <f <■ ¿“ iV ¿tu; iîtnj ? HI P ls tiic m a te ria l used c a rrie s Under<7ritars


    OCR Scan
    PDF MBR10H100CT MBR10H200CT 10H150CT 10H20QCT 30CKI« 10h100c

    1da marking

    Abstract: MBR10H100CT MBR10H200CT TV125 MARKING CODE 1DA
    Text: TAIWAN SEMICONDUCTOR 5 MBR10H100CT - MBR10H200CT 10.0 AMPS. Schottky Barrier Rectifiers RoHS TO-220AB CO M PLIANCE -nr Features <• <■ <■ Plssiic material used carries Under*ri<era Laboratory Classifications &4V-0 Metal silicon Junction, ma|orlty carrier condutfion


    OCR Scan
    PDF MBR10H100CT MBR10H200CT O-220AB 1da marking MBR10H200CT TV125 MARKING CODE 1DA