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    Tagore Technology Inc TA9110K-EVB-B

    TA9110K EVAL BOARD
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    DigiKey TA9110K-EVB-B Bulk 1 1
    • 1 $540
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    Richardson RFPD TA9110K-EVB-B 1
    • 1 $592.11
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    TE Connectivity 10KEVD10AFPW

    LINE FILTER 440VAC 10A CHASS MNT
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    DigiKey 10KEVD10AFPW Box 6
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    Avnet Americas 10KEVD10AFPW Bulk 6
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    Mouser Electronics 10KEVD10AFPW
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    TE Connectivity 10KEVD10BFPW

    Power Line Filter 3-Phase Dual Stage 50Hz 10A 520V Terminal Block Flange Mount - Bulk (Alt: 4-1609998-0)
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    Avnet Americas 10KEVD10BFPW Bulk 6
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    Mouser Electronics 10KEVD10BFPW
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    Newark 10KEVD10BFPW Bulk 6
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    RS 10KEVD10BFPW Bulk 6
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    Onlinecomponents.com 10KEVD10BFPW
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    TE Connectivity 10KEVD10AFPW (ALTERNATE: 1-1609998-0)

    Filter, KEV 10A 2S SP WYE 440 VAC | TE Connectivity 10KEVD10AFPW
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    RS 10KEVD10AFPW (ALTERNATE: 1-1609998-0) Bulk 6
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    Tagore Technology Inc TA9110K-EVB-C

    RF TRANSISTOR TEST FIXTURE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD TA9110K-EVB-C 1
    • 1 $592.11
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    10KEV Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HS-3530RH

    Abstract: HS2-3530RH-8 HS2-3530RH-Q
    Text: HS-3530RH Low Power, Radiation Hardened Programmable Operational Amplifier August 1995 Features Pinout • Radiation Environment - Neutron Fluence Φ 5 x 1012 n/cm2 (E ≥ 10KeV) - Gamma Rate (γ) 1 x 109 RAD (Si)/s - Gamma Dose (γ) 1 x 106 RAD (Si) 8 LEAD METAL CAN PACKAGE (CAN)


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    HS-3530RH 10KeV) MIL-STD-1835 100kHz HS-3530RH HS2-3530RH-8 HS2-3530RH-Q PDF

    OD-800F

    Abstract: OD-800L OD-800W od800w
    Text: HI-REL RAD HARD IR EMITTERS OD-800W FEATURES 1.00 MIN. ANODE CASE GLASS .006 HIGH MAX .015 • Designed for high radiation tolerance .209 .212 • Excellent power degradation characteristics • High power output • Fast response .183 .152 .187 .156 .100


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    OD-800W MIL-S-19500 100Hz OD-800F OD-800L OD-800W od800w PDF

    OPA03

    Abstract: DMILL 65260 npn nv SRAM cross reference SUN SENSOR BGP01 hep 50 hep silicon diode scr spice model SMALL ELECTRONICS PROJECTS
    Text: Atmel is manufacturing the DMILL technology in its Nantes’ factory. Primarily developed to serve the High Energy Physics market, the technology offers versatile components suitable for any advanced mixed or pure digital conception. Taking advantage of SOI use and trench insulators, the SCR structures inherently present in


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    PDF

    nir emitter leds with 700 to 900 nm

    Abstract: ODD-660W ansi z136.1 -vcsel photodiode 650nm nep UV led diode 200 nm peak 1W OD-850-30-030 OD-800W ODD-42WB "infrared led" 800 nm 980 nm led nir
    Text: Optoelectronics Data Book Innovators in Optoelectronics TABLE OF CONTENTS Alphanumeric Eye Safety


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    660nm ODD-660W nir emitter leds with 700 to 900 nm ODD-660W ansi z136.1 -vcsel photodiode 650nm nep UV led diode 200 nm peak 1W OD-850-30-030 OD-800W ODD-42WB "infrared led" 800 nm 980 nm led nir PDF

    OD-800L

    Abstract: No abstract text available
    Text: HI-REL RAD HARD IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-800L ANODE CASE .015 • Designed for high radiation tolerance .209 .220 • Excellent power degradation characteristics • High power output .183 .152 .186 .156 • Fast response .100 • Hermetically sealed metal package


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    OD-800L MIL-S-19500 100mA 100Hz OD-800L PDF

    OD-800F

    Abstract: No abstract text available
    Text: HI-REL RAD HARD IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-800F ANODE CASE .015 • Designed for high radiation tolerance .209 .220 • Excellent power degradation characteristics • High power output .183 .186 .152 .154 • Fast response .100 • Hermetically sealed metal package


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    OD-800F MIL-S-19500 100mA 100Hz OD-800F PDF

    DNA-H-93-140

    Abstract: DNA-H-95-61 e1309 JEP133 transistor 2N2222 F1262 FOTP-64 MOSFET DOSIMETER sensor 3414 cobalt-60
    Text: N RADIATION OWNER’S MANUAL – RHA-Related Documents Military Performance Specifications 19500 – General Specification for Semiconductor Devices 38534 – Performance Specifications for Hybrid Microcircuits 38535 – General Specification for Intregrated Circuits Microcircuits Manufacturing


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    P1156 PSS-01-609 heisen9929 DNA-H-93-140 DNA-H-95-61 e1309 JEP133 transistor 2N2222 F1262 FOTP-64 MOSFET DOSIMETER sensor 3414 cobalt-60 PDF

    opto 1010

    Abstract: OD-800PP OD-880PP
    Text: HI-REL GaAlAs IR EMITTERS OD-880PP FEATURES GLASS DOME .010 R. .005 .010 .082 .088 • High reliability LPE GaAlAs IRLEDs • High power output ANODE .084 .092 • 880nm peak emission • Hermetically sealed miniature pill package .058 .062 • MIL-S-19500 screening available


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    OD-880PP 880nm MIL-S-19500 100Hz opto 1010 OD-800PP OD-880PP PDF

    OD-800PP

    Abstract: No abstract text available
    Text: HI-REL RAD HARD IR EMITTERS OD-800PP FEATURES GLASS DOME .010 R. .005 .010 • Designed for high radiation tolerance .082 .088 ANODE .084 .092 .016 .024 • High power output • Fast response .058 .062 • Hermetically sealed miniature pill package • MIL-S-19500 screening available


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    OD-800PP MIL-S-19500 100Hz OD-800PP PDF

    Untitled

    Abstract: No abstract text available
    Text: X-RAY I.I. CAMERA UNIT C7716, C7716-10 NEW 3”/1.8” Dual Mode X-ray Image Intensifier X-Ray I. I. Efficiently Coupled to CCD Camera Captures sharp, clear X-ray images even from light element materials ! The C7716 series X-ray image intensifier (I. I.) camera


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    C7716, C7716-10 C7716 SE-171-41 1043E04 PDF

    Untitled

    Abstract: No abstract text available
    Text: HI-REL RAD HARD IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-800L ANODE CASE • Designed for high radiation tolerance .209 .212 .015 • Excellent power degradation characteristics • High power output • Fast response .183 .152 .186 .156 .100 • Hermetically sealed metal package


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    OD-800L MIL-S-19500 100Hz PDF

    OD-800F

    Abstract: No abstract text available
    Text: HI-REL RAD HARD IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-800F ANODE CASE • Designed for high radiation tolerance .209 .212 .015 • Excellent power degradation characteristics • High power output .183 .186 • Fast response .152 .154 .100 • Hermetically sealed metal package


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    OD-800F MIL-S-19500 100mA 100Hz OD-800F PDF

    opto 1010

    Abstract: OD-800PP
    Text: HI-REL RAD HARD IR EMITTERS OD-800PP FEATURES GLASS DOME .010 R. .005 .010 .082 .088 • Designed for high radiation tolerance • Super high reliability ANODE .084 .092 • High power output • Fast response .058 .062 • Hermetically sealed miniature pill package


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    OD-800PP MIL-S-19500 100Hz opto 1010 OD-800PP PDF

    DIFFERENTIAL/HS1-5104RH

    Abstract: No abstract text available
    Text: 2 H A R R I S H S -5 104 RH Radiation Hardened Low Noise Quad Operational Amplifier J u ly 1 9 9 0 Features P in o u t • Radiation Environment ► Neutron Fluence <t>). 5 x 101 2 n/c m 2 ( E i 10KeV) ►Gamma Rate ( y ) . 1 x 109 RAD (Si)/s


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    10KeV) DIFFERENTIAL/HS1-5104RH PDF

    Untitled

    Abstract: No abstract text available
    Text: b3E J> m 45S 1 Ö 7S GATE ARRAYS QDD1Q2G ^ 5 5 • H 0 N 3 Honeywell HONE YÜ1ELL/S S E C RICMOS SEA OF TRANSISTORS GATE ARRAY HR1060 FEATURES RADIATION HARDNESS OTHER • Total Dose Hardness of >1x106 rad Si02 • Wafers from DESC certified QML 1.2 ¡im process


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    HR1060 1x106 1x109rad 1x1012rad 1x109upsets/bit-day 1x1014cnrr2 PDF

    74c920

    Abstract: 74C929 74C930 1 phase SCR TRIGGER PULSE TRANSFORMER d8259ac zener chn 848 P8255 interfacing 8289 with 8086 HD-6402C-9 harris semiconductor cmos
    Text: ADVANCED SEMICONDUCTOR DEVIC^S P T Y LTD y I JOHANNESBURG 2000 TEL. 802-5820 DIGITAL DATA BOOK Part of the Harris Spectrum of Integrated Circuits HARRIS $ 5 .0 0 1 9 8 4 Harris C M O S Digital Data Book Harris Semiconductor CMOS Digital Products Division's


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeywell HC6216 Military Products 2K x 8 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 |im Process • Typical 45 ns Access Time • Total Dose Hardness through 1x10 rad SiOz • Low Operating Power


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    HC6216 1x1014cnr2 1x109 1x101 PDF

    HC6264

    Abstract: No abstract text available
    Text: HONEYldELL/SS ELEK-. PII L 03 DËJ 4551Û7E 00 005 2E 1 ^ ¿ -2 3 -/2 Honeywell HC6264 Preliminary Digital Technologies 8K x 8 Radiation-Hardened Static RAM - HC6264 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiall .2 im Process • Access Time 50ns Typical


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    HC6264 1x101 1x109 36-pin HC6264 PDF

    chip diagram of ram chip 6116

    Abstract: m2011 bond pull M2019 M2010 M2011 S102 marking RAD
    Text: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 |xm Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad SiOz


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    HC6116â 1x10ucrrr2 1x109 1x1012 chip diagram of ram chip 6116 m2011 bond pull M2019 M2010 M2011 S102 marking RAD PDF

    B1762

    Abstract: la 1213 ic 921 RJ32 SFT6200
    Text: Preliminary Data Sheet SFT6200 10 AMP RADIATION TOLLERANT NPN TRANSISTOR 213 9 2 1 -9 6 6 0 150 VOLTS L CASE STYLE W JEDEC TO—5 1 4 8 3 0 V a lle y V ie w A v e n u e L a M i rad a. C a lifo rn ia 9 0 6 3 8 T W X 9 1 0 -5 8 3 -4 8 0 7 F A X 2 1 3 -9 2 1 -23 9 6


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    SFT6200 150MHz 150ns B1762 la 1213 ic 921 RJ32 PDF

    2N5531

    Abstract: j3305 2N552 Solitron Devices solitron transistors 2N5527 SOLITRON silicon power transistors TR-33 tr33"05
    Text: — SOLITRON DEVICES INC bb DE | û3bflt,D2 ODDl^D? 2 ~ f 1_ _ 3 ?, ü ^ RADIA TION RESISTANT NPN SILICON POWER TRANSISTORS 2N5527 2N5531 NPN SILICON POWER TRANSISTORS RADIATION RESISTAN T 5 AMPERES FEATURES MEDIUM POWER RADIATION EXPOSURE LEVEL TO 5 x 1014 nvt


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    2N5527 2N5531 2N5527 2N552? 2N5531 j3305 2N552 Solitron Devices solitron transistors SOLITRON silicon power transistors TR-33 tr33"05 PDF

    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


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    108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117 PDF

    harris 6616

    Abstract: No abstract text available
    Text: Honeywell ROMs HC6616 2K x 8 RADIATION-HARDENED ROM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiah .2 \im Process • Typical 45 ns Access Tim e • Total Dose Hardness through 1x106 rad S i02 • Low Operating Power • Neutron Hardness through 1x1014c n r2


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    1x106 1x1014c 1x109 1x101 24-Lead HC6616/1 HC6616/2 harris 6616 PDF

    2N5530

    Abstract: LC117 2N5534 SOLITRON NPN Transistor 10A 24V solitron transistors 2N5529 Solitron Devices Solitron Transistor 2N5533
    Text: 83£flßI^- S O L I T R O N DEVICES INC _ _ _ _ 6 6 C 01912 D T"1 3 3 - /f _ I^ SätD aD D D M ia t I ßflQ ifljH jfl KtSlSlAN T NPN SILICON POWER TRANSISTORS 2N5529 2N5530 2N5533 2N5534 NPN SILICON POWER TRANSISTORS RADIATION RESISTANT 10 AMPERES FEATURES


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    2N5529 2N5530 2N5533 2N5534 5x1014 2N5530* 2N5534* lc117 2N5534 SOLITRON NPN Transistor 10A 24V solitron transistors Solitron Devices Solitron Transistor PDF