EEA-PAM-535-D-32
Abstract: vickers amplifier cards EEA-PAM-553-D-32 Vickers KCG-3 valve EEA-PAM-533-D-32 KHDG5 Vickers KCG-3 EEA-PAM-513-D-32 EEA-PAM 561 A 12 EEA-PAM-535-A-32
Text: Vickers Accessories Power Amplifiers with PID Modules EEA-PAM-5*-D-32 Series General Description The EEA-PAM-5*-D-32 Eurocards are power amplifiers with integrated PID modules. Each of these cards replaces two conventional electronic cards. Features and Benefits
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-D-32
EEA-PAM-535-D-32
vickers amplifier cards
EEA-PAM-553-D-32
Vickers KCG-3 valve
EEA-PAM-533-D-32
KHDG5
Vickers KCG-3
EEA-PAM-513-D-32
EEA-PAM 561 A 12
EEA-PAM-535-A-32
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L79K
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR 1EE D I T'HTOTb □□QBSDb t. CORP L79M00T Series T-^rg - I - r3 » -5 Cg2605A Features . Output Voltage M o n o lith ic L in e a r IC 3110 L79M05T:-5V L79M10T:-10V L79M24T:-24V to - 2 4 V 0 .5 A 3-Pin Voltage Regulator L79M06T:-6V L79M12T:-12V
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L79M00T
Cg2605A
L79M05T
L79M10T
L79M24T
L79M08T-t
L79M15,
L79M09T
L79M20T
L79M06T
L79K
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Untitled
Abstract: No abstract text available
Text: IRFZ24 Advanœ d Power MOSFET FEATURES B V DSS = 60 V ♦ Avalanche Rugged Technology ^ D S o n - ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 7 Q 17 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area T O -220 ♦ 175°C Operating Temperature
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IRFZ24
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ADSP-2187L
Abstract: No abstract text available
Text: ANALOG DEVICES FEATURES PERFORMANCE 19 ns Instruction Cycle Tim e @ 3.3 V olts, 52 MIPS Sustained Performance Single-Cycle Instruction Execution Single-Cycle Context Switch 3-Bus Architecture A llow s Dual Operand Fetches in Every Instruction Cycle M ultifunction Instructions
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ADSP-2100
ADSP-2187LKST-160
ADSP-2187LBST-160
ADSP-2187LKST-210
ADSP-2187LBST-210
100-Lead
ST-100
ADSP-2187L
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} Tí D eT I t D ^ S G 990 16850 9097250 TOSHIBA DISCRETE/OPTO ^/oihlha üDlbñSG 3 D 1-39-13 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 4 3 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOSIT) INDUSTRIAL APPLICATIONS Unit in mm
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500nA
250uA
250uA
00A/us
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Untitled
Abstract: No abstract text available
Text: Honeywell HTMOS High Temperature Products A d v an ce Information HIGH TEMPERATURE juP COMPATIBLE 12-BIT A/D CONVERTER HT574 FEATURES APPLICATIONS • Specified Over -55 to +225°C • Down-Hole Oil Well • Includes On-Chip Clock, Reference, • Avionics
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12-BIT
28-Lead
HT574
HT574
900177Rev
4551A72
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mosfet ir 250 n
Abstract: No abstract text available
Text: IRFZ24 Advanced Power MOSFET FEATURES B ^ dss - 60 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 7 Q 17 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature
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IRFZ24
mosfet ir 250 n
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IRZE
Abstract: No abstract text available
Text: IRFWZ24 Advanced Power MOSFET FEATURES BV DSS 60 V ♦ Rugged Gate Oxide Technology ^ D S o n - 0.07Q ♦ Lower Input Capacitance In = 17 A ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PA K ♦ 175°C Operating Temperature
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IRFWZ24
IRZE
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Untitled
Abstract: No abstract text available
Text: L6269 12V DISK DRIVE SPINDLE & VCM, POWER & CONTROL “COMBO” PRODUCT PREVIEW GENERAL • 12V +/-10% OPERATION. ■ REGISTER BASED ARCHITECTURE ■ MINIMUM EXTERNAL COMPONENTS ■ BICMOS + VERTICAL DMOS (1.5mm) VCM DRIVER ■ 1.5A DRIVE CAPABILITY ■ 0.9WTOTAL BRIDGE IMPEDANCE AT 25°C
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L6269
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Untitled
Abstract: No abstract text available
Text: HA-5134/883 Semiconductor Precision Quad Operational Amplifier July 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HA-5134/883 is a precision quad operational amplifier that
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HA-5134/883
MIL-STD883
HA-5134/883
OP-400,
LT1014,
RM4156,
LM148
HA-4741/883.
350nV,
500kV/V
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Untitled
Abstract: No abstract text available
Text: L6254 12V DISK DRIVE SPINDLE & VCM, POWER & CONTROL “COMBO” PRODUCT PREVIEW GENERAL • 12V ±10% OPERATION. ■ REGISTER BASED ARCHITECTURE ■ MINIMUM EXTERNAL COMPONENTS ■ BICMOS + VERTICAL DMOS (1.5mm) VCM DRIVER ■ 1.5A DRIVE CAPABILITY ■ 0.9WTOTAL BRIDGE IMPEDANCE AT 25°C
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L6254
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Untitled
Abstract: No abstract text available
Text: L6268 12V DISK DRIVE SPINDLE & VCM, POWER & CONTROL “COMBO” PRODUCT PREVIEW GENERAL • 12V +/-10% OPERATION. ■ REGISTER BASED ARCHITECTURE ■ MINIMUM EXTERNAL COMPONENTS ■ BICMOS + VERTICAL DMOS (1.5mm) VCM DRIVER ■ 1.5A DRIVE CAPABILITY ■ 0.9WTOTAL BRIDGE IMPEDANCE AT 25°C
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L6268
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TA8622N
Abstract: 1A12 47RA 390P DB1A12 db audio A1UB
Text: TOSHIBA TA8622N INItüKAltD UKLUI TOSHIBA BIPOLAR LINEAR INTEGRATED CIRUIT TECHN ICAL D ATA SILICON MONOLITHIC T E N T A T I VE oTV SOUND MPX DEMODULATOR FOR U.S.A. SYSTEM • Internal filter for SUB and SAP . SUB/SAP display . Space Wide •Volume, balance, bass, treble cotrol
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SDIP42-P-600
10VJF
033pF
10yF16V
TA8622N
1A12
47RA
390P
DB1A12
db audio
A1UB
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Untitled
Abstract: No abstract text available
Text: C il^ A V % i i^ H W V Corporation ▼ HS574A/SP674A SIGNAL PROCESSING EXCELLENCE 12-Bit Sampling A/D Converters Complete 12-bit A/D Converters with SampleHold, Reference, Clock and Trt-state Outputs Low Power Dissipation — 110mW Maximum 12-Bit Linearity Over Temperature
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HS574A/SP674A
12-Bit
110mW
HS574A)
SP674A)
HS574A/SP674A
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Untitled
Abstract: No abstract text available
Text: 6427525 TÛ N E C De | ELECTRO N ICS bM27S5S OaiöTBfi INC b P R E L IM IN A R Y S P E C IF IC A T IO N MOS FIE LD EFFECT P OWE R TRANSISTOR ELECTRON DEVICE FAST SWITCHING N-CHANNEL S I L I C O N POWER MOS FET FEATURES « S u ita b le f o r sw itch in g power s u p p lie s ,
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bM27S5S
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74HL33534D
Abstract: 74HL33534DB
Text: Philips Semiconductors Preliminary Specification Octal D-type flip-flop; positive edge-trigger; 3-state; inverting_ FEATURES • • • • • • • QUICK REFERENCE DATA GND = 0 V; T „ * = 25 °C; t, = t, = 2.0 ns Wide supply voltage range of
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74HL33534
74HL33534
711002b
Q07SbS7
74HL33534D
74HL33534DB
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E08LM
Abstract: LM 301A
Text: SGS-THOMSON L M 1 0 1 A - L M 2 0 1 A L M 3 0 1 A IM SINGLE OPERATIONAL AMPLIFIERS LM101A LM301A LM201A • ■ ■ ■ INPUT OFFSET VOLTAGE 0.2 mV INPUT BIAS CURRENT 25 nA INPUT OFFSET CURRENT 1.5 nA SLEW RATE AS INVERTING AMPLIFIER 10 V/|is 2 mV 70 nA 2 nA
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LM101A
LM301A
LM201A
LM101A-LM201A-LM301A
E08LM
LM 301A
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1rf830
Abstract: 1rf840 RF822 IRFB40R IRF820R IRF830R J50 mosfet IRFS30 RF842 IRF820
Text: HLAJRRIS IRF820/82 i/822/823 IRF820R/821R/822R/823R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Fea tu res Package T 0 -2 2 0 A B TOP VIEW • 2.2 and 2.5A, 450V - 500V • f D S !0 0 = 3 -0 i l an d DRAIN FLAN GE) • Single Pulse Avalanche Energy Rated*
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IRFQ20/Q21/822/823
IRF820R/821R/822R/823R
IRF820,
RF821,
1RF822,
IRF823
IRF820R,
IRF821R,
IRF822R
IRF823R
1rf830
1rf840
RF822
IRFB40R
IRF820R
IRF830R
J50 mosfet
IRFS30
RF842
IRF820
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C11371
Abstract: AD515K 2N 10261 transistor application circuit Transistor AF 138S analog devices modell 281 analog devices modell 118 Model 310J ac121 inverter welder 4 schematic
Text: ANALOG DEVICES DATA ACQUISITION PRODUCTS CATALOG SUPPLEMENT Introduction USING THIS CATALOG SUPPLEMENT This Supplement includes some 70 products introduced sub sequent to the publication o f our Data Acquisition Products Catalog. I f you do not already have the Data Acquisition
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Untitled
Abstract: No abstract text available
Text: FORWARD INTERNATIONAL ELECTRONICS L ID . KTC3198L SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE AMPLIFIER APPLICATION Package: TO-92 FEATURES * Excellent Hfe Linearity :Hfe 2 =100(Typ) atVce=6V, Ic= 150mA. :HFE(Ic=0.1mA)/Hfe(Ic=2mAH). 95(Typ).
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KTC3198L
150mA.
toKTA1266L
100uA
100uA
150mA
100mA
10VIeF
10VJe
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Untitled
Abstract: No abstract text available
Text: Sipepe SP674A Coiporat>on^ SIGNAL PROCESSING EXCELLENCE COMPLETE 12-BIT, 15/iSEC A /D CONVERTER WITH MP INTERFACE FEATURES *2 a i r s A m • Complete 12-bit A/D converter with samplehold, reference, clock, and three-state outputs ■ Low power dissipation: 150mW max
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SP674A
12-BIT,
15/iSEC
12-bit
150mW
16-bit
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K184
Abstract: 2SK184
Text: 2SK184 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR 2 S K SILICON N CHANNEL JUNCTION TYPE 18 4 Unit in mm LOW NOISE AUDIO AM PLIFIER APPLICATIONS 4.2MAX. • High |Yfs| : |Yfs| = 15mS Typ. (VDS = 10V, VGS = 0) • High Breakdown Voltage : V q /d § = —50V •
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2SK184
--50V
55MAX.
--30V)
120Hz
K184
2SK184
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lm 7402
Abstract: SP8676
Text: MWOOWWWWWvW»«'XWwy*l»"» l WÀ s* 'yX •"■5* -X-■*■ / Í X,^ ¿ Í w a v a ". Drop in 16-Bit upgrade for existing 12-Bit 674 Complete Monolithic 16-Bit A/D Converter with Sample-Hoid, Reference, Clock and Tri-state Outputs Full Nyquist Sampling at 66kHz Sample Rate
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16-Bit
12-Bit
66kHz
200mW
15-Bit
BBIgr/SP8676/9410R2
lm 7402
SP8676
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SIEMENS ILQ1
Abstract: No abstract text available
Text: SIEMENS ILD1/2/5 ILQ1/2/5 DUAL CHANNEL QUAD CHANNEL PHOTOTRANSISTOR OPTOCOUPLER FEATURES • C u rre n t T ransfer R atio a t lF=10 m A ILD/Q1, 20% Min. IL D /Q 2 ,100% Min. ILD/Q5, 50% Min. • H igh C o lle c to r-E m itte r V oltage ILD /Q 1: BV ce o =50 V
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E52744
SIEMENS ILQ1
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