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    1106 DIODE Search Results

    1106 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    1106 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MAA5

    Abstract: No abstract text available
    Text: SMD INFRARED EMITTING DIODES KPL-3015F3C 1106 Part No. KA-3528F3C Material λD P (nm) Lens Type KM2520F3C03 Po Iv (m mW cd/s)r) View ing @ @2300m mA A*5500m mA A Angle Min. Typ. Dimension 2θ 1/2 3.0mm x 1.5mm x 1.4mm (1106) KPL-3015F3C GaAs 940 water clear


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    PDF KPL-3015F3C KA-3528F3C KM2520F3C03 KPL-3015F3C KPL-3015SF4C KA-3528SF4C KM2520F3C03 KM2520SF4C03 MAA5

    Untitled

    Abstract: No abstract text available
    Text: SMD INFRARED EMITTING DIODES KPL-3015F3C 1106 Part No. KA-3528AF3C Material λP (nm) Lens Type KM2520F3C03 Po (mW/sr) View ing @20mA *50mA Angle Min. Typ. Dimension 2θ θ 1/2 3.0mm x 1.5mm x 1.4mm (1106) KPL-3015F3C GaAs 940 water clear 0.4 1.2 70° KPL-3015SF4C


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    PDF KPL-3015F3C KA-3528AF3C KM2520F3C03 KPL-3015F3C KPL-3015SF4C KA-3528AF3C KA-3528ASF4C KM2520F3C03 KM2520SF4C03 880le

    220v AC voltage stabilizer schematic diagram

    Abstract: rjh 3047 equivalent WECO 1502 connection drawing transistor equivalent rjh 3047 str 1265 smps power supply circuit of tv transistor a950 MTK 6252 weco 602 connection drawing 8140 SOURIAU weco 1502 cap drawing
    Text: INTERCONNECTS Interconnects AC Power Connectors Power Cords, Power Entry Modules, Power Filters, Power Outlets and Inlets Bulgin. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1105 Qualtek . . . . . . . . . . . . . . . . . . . . . . . . . . . 1106, 1107


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    IR21834

    Abstract: irs2183 application note IR2183 IRS218 IRS21834 IRS2183 AN-1106 AN1106
    Text: Application Note AN-1106 IRS218 3,34 and IR218(3,34) Comparison By Jason Nguyen, Min Fang, David New Table of Contents Page Introduction .1 Block Diagrams .2


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    PDF AN-1106 IRS218 IR218 IR21834 irs2183 application note IR2183 IRS21834 IRS2183 AN-1106 AN1106

    Untitled

    Abstract: No abstract text available
    Text: AN-1106 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com An Improved Topology for Creating Split Rails from a Single Input Voltage by Kevin Tompsett INTRODUCTION


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    PDF AN-1106 ADP161x ME3220-102MLB ADP1613 AN09556-0-7/13

    Z8F1622

    Abstract: Z8*6421 Z8F642 TAG 8648
    Text: High Performance 8-Bit Microcontrollers Z8 Encore! 64K Series Product Specification PS019917-1106 ZiLOG Worldwide Headquarters • 532 Race Street • San Jose, CA 95126 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.zilog.com This publication is subject to replacement by a later edition. To determine whether


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    PDF PS019917-1106 Z8F1622 Z8*6421 Z8F642 TAG 8648

    IGCT

    Abstract: snubber IGCT
    Text: VRRM IFAVM IFSM VF0 rF VDClink = = = = = = 4500 320 5 2 1.5 2400 V A kA V Fast Recovery Diode 5SDF 03D4501 mΩ V Doc. No. 5SYA 1106-02 Aug. 2000 • Patented free-floating silicon technology • Low switching losses • Optimized to use as snubber and clamp diode in GTO and IGCT converters


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    PDF 03D4501 CH-5600 IGCT snubber IGCT

    snubber IGCT

    Abstract: No abstract text available
    Text: Key Parameters VRRM = 4500 IFAVM = 320 IFRMS = 500 IFSM = 5 VF0 = 2.00 rF = 1.5 VDClink = 2400 V A A kA V Fast Recovery Diode 5SDF 03D4501 mΩ V Doc. No. 5SYA 1106-02 July 98 Features •Patented free-floating silicon technology •Low switching losses •Optimized to use as snubber and clamp diode in GTO and IGCT converters


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    PDF 03D4501 CH-5600 snubber IGCT

    Diode XA 1106

    Abstract: No abstract text available
    Text: AN-1106 应用笔记 One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com 由单一输入电压实现分离供电轨的改进拓扑结构 作者 :Kevin Tompsett 简介 对该转换器的工作原理及使用 ADI 公司 ADP161x 的实现方


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    PDF AN-1106 ADP161x ME3220-102MLB ADP1613 AN09556sc-0-9/11 Diode XA 1106

    2N3906 Darlington transistor

    Abstract: BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212
    Text: CHAPTER 1 Selector Guide http://onsemi.com 5 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11


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    PDF M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 2N3906 Darlington transistor BC337 MPS5172 "cross-reference" low noise transistors bc638 transistor mpf102 LOW NOISE BC638 SOT-346 431 BC237 BC307 BC212

    BC327 BC337 noise figure

    Abstract: BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212
    Text: CHAPTER 1 Selector Guide http://onsemi.com 5 http://onsemi.com 6 Small–Signal Bipolar Transistors, JFETs, and Diodes In Brief . . . Page Bipolar Transistors General–Purpose Transistors . . . . . . . . . . . . . . . . . 8 General–Purpose Multiple Transistors . . . . . . . . 11


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    PDF M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 BC327 BC337 noise figure BC337 Transistor BC307b MPS5172 "cross-reference" BC237 BC307 BC212

    B540

    Abstract: on B540 SP6136 Si3434DV SP6136ER1 22UF-16V
    Text: DESIGN SOLUTION # 51 Solved by TM SP6136 Boost Regulator: 12V Input to 18V @ 0-2A Output Designed by: Shahin Maloyan Part Number: SP6136ER1 Application Description: High-voltage Point-of-Load Electrical Requirements: Input Voltage Output Voltage Output Current


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    PDF SP6136 SP6136ER1 600kHz) CA95035 B540 on B540 Si3434DV SP6136ER1 22UF-16V

    VF7-41F11-C05

    Abstract: C2241 v23134
    Text: Plug-In Relays Mini ISO Relays Catalog 1308028 Revision 11-06 Power Relay F7 / VF7 Powertrain Systems Revision 03-05 Chassis Systems Safety Security Body Driver Information Convenience Description Features – Limiting continuous current 70 A – Dimensional characteristics


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    D4457N

    Abstract: D2228N D448N D5807N D758N d4457n m3.2
    Text: Sperr - Diode + Gleichspannung Sperrspannung Bauelement VRRM 100 V 200 V 400 V 200 V 400 V 800 V + - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Id Schaltung Wasser men. vL pro KB Diode D Thyristor T Kühlblock KB [ltr/min] Anzahl KB pro


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    PDF D448N D758N D2228N D4457N D5807N D4457N D2228N D448N D5807N D758N d4457n m3.2

    3015SF

    Abstract: No abstract text available
    Text: K ingbright INFRARED EMITTING DIODES KP-3015F3C Part No. KPA-3010F3C Material Wave­ length nm Lens Type KM2520A01F3C001 Po(mW/sr) @20mA *50mA Min. Typ. Viewing Angle Dimension 2q1/2 3.0mm x 1.5mm (1106) POLARITY MARK KP-3015F3C GaAs 940 water clear 0.8


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    PDF KP-3015F3C KPA-3010F3C KM2520A01F3C001 KP-3015F3C KP-3015SF4C KPA-3010F3C KPA-3010SF4C KM2520A01 F3C001 3015SF

    Untitled

    Abstract: No abstract text available
    Text: MAD 1106 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 602 941-6300 Fax (602) 947-1503 Switching Diode Array FEATURES • • • 8 Isolated lines of protection Common Anode Standard 14 pin Dual-In-Line Package UL 94V-0 Flammability Classification MECHANICAL


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    PDF 400mA 500mW MAD1106 100mA MSC0904

    42r2

    Abstract: RC snubber circuit BYW 62 Thomson-CSF 22R2 RP 8040 X ku1010 BYW88-600 BYW88-800 RP4040 g4010
    Text: rectifier diodes < 100 A o diodes de redressement < 100A THOMSON-CSF Types •o VRRM A (V) ■f sm vF (A) (V) / iF 10 m s max 6 A * / Tease = 125°C G 506,(R) G 1006, (R) G 2006, (R) G 3006,(R) G 4006, (R) G 5006,(R) G 6006,(R) G 8006, (R) G 1106, (R) G 1206, (R)


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    PDF 200A2s CB-33) 100A2s CB-227) TNF300 42r2 RC snubber circuit BYW 62 Thomson-CSF 22R2 RP 8040 X ku1010 BYW88-600 BYW88-800 RP4040 g4010

    42R2

    Abstract: Thomson-CSF 22R2 62R2 All diodes KU 506 BYW 70 RP 8040 X BYW88-100 FR58A C1-200
    Text: rectifier diodes < 100 A o diodes de redressement < 100A THOMSON-CSF Types •o VRRM A (V) ■ fsm vF (A) (V) / iF 10 ms m ax 6 A* / Tease = 125°C G 5 0 6 ,(R) G 1006, (R) G 2006, (R) G 3006,(R) G 4006, (R) G 5006,(R) G 6006,(R) G 8006, (R) G 1106, (R)


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    PDF 200A2s CB-33) 100A2s CB-227) TNF300 42R2 Thomson-CSF 22R2 62R2 All diodes KU 506 BYW 70 RP 8040 X BYW88-100 FR58A C1-200

    MAX534BCP

    Abstract: No abstract text available
    Text: JVMÏXAJVl 8 -B if 19-1106;Rev0;8/96 +5V, Low-Power, Q uad DAC w ith R ail-to-R ail O utput B uffers _ Applications Features ♦ +4.5V to +5.5V Single-Supply Operation ♦ Ultra-Low Supply Current: 0.8mA while Operating 2.5|jA in Shutdown Mode


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    PDF MAX534 12-bit MAX534 MAX534BCP

    42R2

    Abstract: diode 42R2 BYW series FR56A FR57A 62R2 fr56 Thomson-CSF rectifier 22R2 FR58A
    Text: o rectifier diodes < 100 A diodes de redressement < 100A THOMSON-CSF Types •o VRRM A (V) ■ fsm vF (A) (V) / iF 10 ms m ax 6 A* / Tease = 125°C G 5 0 6 ,(R) G 1006, (R) G 2006, (R) G 3006,(R) G 4006, (R) G 5006,(R) G 6006,(R) G 8006, (R) G 1106, (R)


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    PDF 200A2s CB-33) 100A2s CB-227) 1000A2 -28UNF* 42R2 diode 42R2 BYW series FR56A FR57A 62R2 fr56 Thomson-CSF rectifier 22R2 FR58A

    MAD130

    Abstract: MAD1103 MAD1104 MAD1105 MAD1106 MAD1107 MAD1108 MAD1109 1108V 1106 diode
    Text: Diode Arrays Motorola has the following selection of diode arrays to meet requirements in applications. These devices are in the popular S014 and S 016 packages. They have the same electrical performance as the standard DIP packages. MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS


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    PDF MAD130* MAD1103* MAD1104* MAD1105* MAD1106* MAD1107* MAD1108* MAD1109* 15haracteristics MAD1103/1104/1105/ MAD130 MAD1103 MAD1104 MAD1105 MAD1106 MAD1107 MAD1108 MAD1109 1108V 1106 diode

    LT1560ED

    Abstract: PQ2WZ51 LT024MD GP1F31T s202t02 GP1U801X LT022 GP2L20L GP1U78R PQ05DZ51
    Text: SHARP Model No. List Model No. List • Infrared Emitting Diodes Model No. GL1F20 GL380 QL381 GL382 GL390 GL390V GL453 GL454 GL480 GL480Q GL4S3Q GL4800 GL460 GL461 GL4600 GL4610 GL4100 GL4200 GL4910 GL496 GL513F GL514 GL560 GL561 GL533 GL537 GL538 GL550 GL551


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    PDF GL1F20 GL380 QL381 GL382 GL390 GL390V GL453 GL454 GL480 GL480Q LT1560ED PQ2WZ51 LT024MD GP1F31T s202t02 GP1U801X LT022 GP2L20L GP1U78R PQ05DZ51

    D1103

    Abstract: No abstract text available
    Text: SURFACE MOUNT DIODE ARRAYS MMAD130 MM AD 1103 These d io d e a rrays are m u ltip le d io d e ju n c tio n s fa b rica ted b y a p la n a r p ro ­ cess and m o u n te d in in te g ra te d c irc u it packages fo r use in h ig h -c u rre n t, fa s t-s w itc h in g co re -d rive r a pp licatio n s. These arrays o ffe r m a n y o f th e


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    D1109

    Abstract: D1103 6 PIN TRANSISTORS 566
    Text: SURFACE MOUNT DIODE ARRAYS MMAD130 MMAD1103 These diode arrays are m ultiple diode junctions fabricated by a planar pro­ cess and m ounted in integrated circuit packages fo r use in high-current, fast-sw itching core-driver applications. These arrays offer many o f the


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