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    114N12N Price and Stock

    Infineon Technologies AG IPP114N12N3GXKSA1

    Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP114N12N3GXKSA1)
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    Avnet Americas IPP114N12N3GXKSA1 Tube 16 Weeks 500
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    Newark IPP114N12N3GXKSA1 Bulk 412 1
    • 1 $2.92
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    Rochester Electronics IPP114N12N3GXKSA1 687 1
    • 1 $0.9022
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    TME IPP114N12N3GXKSA1 86 1
    • 1 $2.09
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    EBV Elektronik IPP114N12N3GXKSA1 17 Weeks 500
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    Infineon Technologies AG IPP114N12N3 G

    MOSFETs N-Ch 120V 75A TO220-3 OptiMOS 3
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    Mouser Electronics IPP114N12N3 G 499
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    114N12N Datasheets Context Search

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    114N12N

    Abstract: diode D83 IPP114N12N3 G IPP114N12N3 JESD22 PG-TO220-3 dd60
    Text: 114N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 120 V R DS(on)max 11.4 mΩ ID • Very low on-resistance R DS(on) 75 A • 175 °C operating temperature


    Original     		IPP114N12N3 PG-TO220-3 114N12N 114N12N diode D83 IPP114N12N3 G JESD22 PG-TO220-3 dd60 PDF

    Untitled

    Abstract: No abstract text available
    Text: 114N12N3 G OptiMOSTM3 Power-Transistor Features Product Summary • N-channel, normal level VDS 120 V • Excellent gate charge x R DS on product (FOM) RDS(on)max 11.4 mΩ 75 ID • Very low on-resistance R DS(on) A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; halogen free


    Original     		IPP114N12N3 PG-TO220-3 114N12N PDF

    Untitled

    Abstract: No abstract text available
    Text: 114N12N3 G OptiMOSTM3 Power-Transistor Features Product Summary • N-channel, normal level VDS 120 V RDS on max 11.4 mΩ • Excellent gate charge x R DS(on) product (FOM) 75 ID • Very low on-resistance R DS(on) A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; halogen free


    Original     		IPP114N12N3 PG-TO220-3 114N12N PDF