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    114X10 Price and Stock

    3M 3M-4611-4--X-10.5--25

    TAPE DBL SIDED GRAY 4"X10 1/2"
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    DigiKey 3M-4611-4--X-10.5--25 Bulk 1
    • 1 $197.5
    • 10 $197.5
    • 100 $197.5
    • 1000 $197.5
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    CR Seals 101X114X10 HMSA1 R

    Double Lip Oil Seal, I.D. 101 mm, O.D. 114 mm, Thickness 10 mm | CR Seals (SKF) 101X114X10 HMSA1 R
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    RS 101X114X10 HMSA1 R Bulk 4 Weeks 1
    • 1 $22.47
    • 10 $21.35
    • 100 $19.1
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    Dichtomatik 100X114X10SB (ALTERNATE: 75001650)

    Oil Seal, 100mm ID, 114mm OD, 10mm Width | Dichtomatik 100X114X10SB
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    RS 100X114X10SB (ALTERNATE: 75001650) Bulk 3 Weeks 1
    • 1 $18.58
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    Dremec DE 114X10

    Screwed spacer sleeve; 10mm; Int.thread: M3; hexagonal; brass
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    TME 114X10 13,373 10
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    • 10 $0.22
    • 100 $0.183
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    Compex Corporation CSM-35-114X103X10-S8-2R47-K

    COMPEX CSM-35-114X103X10-S8-2R47-K CAP 2.47pf 10%
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    ES Components CSM-35-114X103X10-S8-2R47-K
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    114X10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDP2670

    Abstract: D2Pak Package dimensions CBVK741B019 EO70 F63TNR FDB2670 FDP7060 NDP4060L
    Text: FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and


    Original     		PDF FDP2670/FDB2670 FDP2670 D2Pak Package dimensions CBVK741B019 EO70 F63TNR FDB2670 FDP7060 NDP4060L

    CBVK741B019

    Abstract: EO70 F63TNR FDB6644 FDP6644 FDP7060 NDP4060L
    Text: FDP6644/FDB6644 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		PDF FDP6644/FDB6644 CBVK741B019 EO70 F63TNR FDB6644 FDP6644 FDP7060 NDP4060L

    high voltage mosfet, to-220 case

    Abstract: No abstract text available
    Text: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


    Original     		PDF FDP6644S/FDB6644S FDP6644S FDP6644S/FDB6644S FDP6644/FDB6644 high voltage mosfet, to-220 case

    Untitled

    Abstract: No abstract text available
    Text: FDP6690S/FDB6690S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


    Original     		PDF FDP6690S/FDB6690S FDP6690S FDP6690S/FDB6690S FDP6035AL/FDB6035AL

    Untitled

    Abstract: No abstract text available
    Text: March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDP6060 NDB6060

    T0-263

    Abstract: CBVK741B019 FDB4020P FDP4020P FDP7060 low threshold mosfet p-channel TO-220
    Text: FDP4020P/FDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage


    Original     		PDF FDP4020P/FDB4020P O-220 O-263 T0-263 CBVK741B019 FDB4020P FDP4020P FDP7060 low threshold mosfet p-channel TO-220

    FDB7045L

    Abstract: CBVK741B019 EO70 F63TNR FDP7045L FDP7060 NDP4060L
    Text: FDP7045L/FDB7045L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		PDF FDP7045L/FDB7045L FDB7045L CBVK741B019 EO70 F63TNR FDP7045L FDP7060 NDP4060L

    TO220 Semiconductor Packaging

    Abstract: CBVK741B019 EO70 F63TNR FDB6676 FDP6676 FDP7060 NDP4060L marking code ng Fairchild
    Text: FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


    Original     		PDF FDP6676/FDB6676 TO220 Semiconductor Packaging CBVK741B019 EO70 F63TNR FDB6676 FDP6676 FDP7060 NDP4060L marking code ng Fairchild

    zener diode 3.0 b2

    Abstract: m 9835 zener diodes color coded CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7050 NDP4060L
    Text: March 1996 NDP7050 / NDB7050 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDP7050 NDB7050 zener diode 3.0 b2 m 9835 zener diodes color coded CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7050 NDP4060L

    CBVK741B019

    Abstract: EO70 F63TNR FDP7060 L86Z NDB6060L NDP4060L NDP6060L
    Text: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDP6060L NDB6060L CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB6060L NDP4060L

    Untitled

    Abstract: No abstract text available
    Text: FDP5645/FDB5645 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 83 A, 60 V.


    Original     		PDF FDP5645/FDB5645

    FDP5680

    Abstract: No abstract text available
    Text: FDP5680/FDB5680 60V N-Channel PowerTrenchTM MOSFET General Description Features • 40 A, 60 V. RDS ON = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.023 Ω @ VGS = 6 V. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters


    Original     		PDF FDP5680/FDB5680 FDP5680

    Untitled

    Abstract: No abstract text available
    Text: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDP6060L NDB6060L

    MOSFET and parallel Schottky diode

    Abstract: CBVK741B019 EO70 FDB6644S FDP6644 FDP6644S FDP7060
    Text: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


    Original     		PDF FDP6644S/FDB6644S FDP6644S FDP6644S/FDB6644S FDP6644/FDB6644 MOSFET and parallel Schottky diode CBVK741B019 EO70 FDB6644S FDP6644 FDP7060

    zener diode 3.0 b2

    Abstract: m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L NDP7061L
    Text: June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDP7061L NDB7061L zener diode 3.0 b2 m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L

    m 9835

    Abstract: CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7060 NDP4060L NDP7060
    Text: May 1996 NDP7060 / NDB7060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDP7060 NDB7060 m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7060 NDP4060L

    CBVK741B019

    Abstract: EO70 F63TNR FDP7060 L86Z NDB7051 NDP4060L NDP7051 Polycarbonate
    Text: August 1996 NDP7051 / NDB7051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is


    Original     		PDF NDP7051 NDB7051 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7051 NDP4060L Polycarbonate

    CBVK741B019

    Abstract: EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L NDP7061L
    Text: June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		PDF NDP7061L NDB7061L CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L

    50s MARKING CODE

    Abstract: FDP7030BL FDP7030BLS MOSFET and parallel Schottky diode CBVK741B019 EO70 FDB7030BLS FDP7060 NDP4060L
    Text: FDP7030BLS / FDB7030BLS 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


    Original     		PDF FDP7030BLS FDB7030BLS FDP7030BLS FDP7030BL 50s MARKING CODE MOSFET and parallel Schottky diode CBVK741B019 EO70 FDB7030BLS FDP7060 NDP4060L

    FDP6030BL

    Abstract: m 9835 ZENER SINGLE COLOR CODE CBVK741B019 EO70 F63TNR FDB6030BL FDP7060 NDP4060L
    Text: FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		PDF FDP6030BL/FDB6030BL FDP6030BL m 9835 ZENER SINGLE COLOR CODE CBVK741B019 EO70 F63TNR FDB6030BL FDP7060 NDP4060L

    CBVK741B019

    Abstract: EO70 F63TNR FDB2570 FDP2570 FDP7060 NDP4060L D2Pak Package dimensions
    Text: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and


    Original     		PDF FDP2570/FDB2570 CBVK741B019 EO70 F63TNR FDB2570 FDP2570 FDP7060 NDP4060L D2Pak Package dimensions

    corrugated box spec

    Abstract: TO220 Semiconductor Packaging FDP7060 NDP4060L CBVK741B019 EO70 corrugated packaging F9852
    Text: TO-220 Tube Packing Data TO-220 Tube Packing Configuration: Figure 1.0 Packaging Description: TO-220 parts are shipped normally in tube. The tube is made of PVC plastic treated with anti-static agent.These tubes in standard option are placed inside a dissipative


    Original     		PDF O-220 530mm 130mm 114mm 102mm F9852 NDP4060L corrugated box spec TO220 Semiconductor Packaging FDP7060 NDP4060L CBVK741B019 EO70 corrugated packaging F9852

    CBVK741B019

    Abstract: EO70 F63TNR FDB6030BL FDP6030BL FDP7060 NDP4060L
    Text: FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		PDF FDP6030BL/FDB6030BL CBVK741B019 EO70 F63TNR FDB6030BL FDP6030BL FDP7060 NDP4060L

    2539a

    Abstract: No abstract text available
    Text: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and


    Original     		PDF FDP2570/FDB2570 2539a