J 115 mosfet
Abstract: sot-23 Marking 7002 2N7002 MARKING pin diagram of MOSFET 7002 SOT-23 mosfet 2n7002 sot-23 body marking A 4 2N7002 2N7002 Die Specification Small Signal MOSFET
Text: 2N7002 115 mAMPS, 60VOLTS, RDS on =7.5 Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ)
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2N7002
60VOLTS,
01-Jun-2002
J 115 mosfet
sot-23 Marking 7002
2N7002 MARKING
pin diagram of MOSFET
7002 SOT-23
mosfet 2n7002
sot-23 body marking A 4
2N7002
2N7002 Die Specification
Small Signal MOSFET
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PDF
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sot-363 n-channel mosfet
Abstract: 2N7002DW Small Signal MOSFET
Text: 2N7002DW 115 mAMPS, 60VOLTS, RDS on =7.5 W Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product SOT-363 Small Signal MOSFET 115 mAmps, 60 Volts .055(1.40) .047(1.20) N–Channel SOT–363 o 8 o .026TYP (0.65TYP) .021REF (0.525)REF R ating S ymbol
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2N7002DW
60VOLTS,
OT-363
026TYP
65TYP)
021REF
01-Jan-2006
500mA
sot-363 n-channel mosfet
2N7002DW
Small Signal MOSFET
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PDF
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2N7002T
Abstract: Small Signal MOSFET
Text: 2N7002T 115 mAMPS, 60VOLTS, RDS on =7.5 W Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–523 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage (RGS = 1.0 MΩ)
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2N7002T
60VOLTS,
01-Jun-2002
2N7002T
Small Signal MOSFET
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Untitled
Abstract: No abstract text available
Text: STB10NK60Z, STP10NK60Z STW10NK60Z N-channel 650 V, 0.65 Ω, 10 A, SuperMESH Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247 Features Type VDSS RDS on max STB10NK60Z-1 600 V < 0.75 Ω 10 A 115 W STB10NK60Z 600 V < 0.75 Ω 10 A 115 W
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STB10NK60Z,
STP10NK60Z
STW10NK60Z
O-220,
O-220FP,
O-247
STB10NK60Z-1
STB10NK60Z
STP10NK60ZFP
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PDF
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p10nk60
Abstract: p10nk60zfp P10NK60Z p10nk W10NK60Z transistor P10NK60ZFP B10NK60Z STB10NK60Z p10nk6 STB10NK60ZT4
Text: STB10NK60Z, STP10NK60Z STW10NK60Z N-channel 650 V, 0.65 Ω, 10 A, SuperMESH Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247 Features Type VDSS RDS on max STB10NK60Z-1 600 V < 0.75 Ω 10 A 115 W STB10NK60Z 600 V < 0.75 Ω 10 A 115 W
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STB10NK60Z,
STP10NK60Z
STW10NK60Z
O-220,
O-220FP,
O-247
STB10NK60Z-1
STB10NK60Z
STP10NK60ZFP
p10nk60
p10nk60zfp
P10NK60Z
p10nk
W10NK60Z
transistor P10NK60ZFP
B10NK60Z
STB10NK60Z
p10nk6
STB10NK60ZT4
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PDF
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p10nk60z
Abstract: P10NK60ZFP w10nk60z stp10nk60
Text: STB10NK60Z, STP10NK60Z STW10NK60Z N-channel 650 V, 0.65 Ω, 10 A, SuperMESH Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247 Features Type VDSS RDS on max STB10NK60Z-1 600 V < 0.75 Ω 10 A 115 W STB10NK60Z 600 V < 0.75 Ω 10 A 115 W
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Original
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STB10NK60Z,
STP10NK60Z
STW10NK60Z
O-220,
O-220FP,
O-247
STB10NK60Z-1
STB10NK60Z
STP10NK60ZFP
p10nk60z
P10NK60ZFP
w10nk60z
stp10nk60
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sot-23 MARKING CODE 70.2
Abstract: 2N7002L 2N7002LT1 2N7002LT1G 2N7002LT3 2N7002LT3G
Text: 2N7002L Preferred Device Small Signal MOSFET 60 V, 115 mA N−Channel SOT−23 http://onsemi.com Features • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish V BR DSS RDS(on) MAX ID MAX 60 V 7.5 mW @ 10 V, 500 mA 115 mA MAXIMUM RATINGS
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2N7002L
OT-23
2N7002L/D
sot-23 MARKING CODE 70.2
2N7002L
2N7002LT1
2N7002LT1G
2N7002LT3
2N7002LT3G
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PDF
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TCP202 10x
Abstract: TDS700 P6243 11A32 TCP0030 TCPA400 TCPA300 Tektronix A622 Tektronix* A622 probe TCP404XL
Text: 115-2012:QuarkCatalogTempNew 8/13/12 5:11 PM Page 115 1 Active and Current Probes TEST & MEASUREMENT Active Probes Accurate High-Frequency Measurements with Reduced Probe Loading For testing high-impedance, high-frequency circuit elements which demand minimal loading, our portfolio of active voltage probes provides the proper signal bandwidth
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P6205
TCPA300
TCPA400
TCP303,
TCP305
TCP312
TCP404XL
TCPA400
TCP202 10x
TDS700
P6243
11A32
TCP0030
Tektronix A622
Tektronix* A622 probe
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PDF
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joystick PS2
Abstract: W83627HF-AW winbond w83627hf-aw 8893 single chip tv processor W83627HF ps2 joystick acer battery pinout W83627HF-PW MOA2 amikey American Megatrends
Text: W83627HF/F WINBOND I/O W83627HF/F Data Sheet Revision History Version Pages Dates Version on Web Main Contents Not released For internal use only 1 n.a. 09/25/98 0.50 2 88-93,102,105, 139,151,153 11/10/98 0.51 3 90-93;113-115 01/11/99 0.52 4 90,91,113-115,
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W83627HF/F
W83627HF/F
1N4148
W83627HF
joystick PS2
W83627HF-AW
winbond w83627hf-aw
8893 single chip tv processor
ps2 joystick
acer battery pinout
W83627HF-PW
MOA2
amikey American Megatrends
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PDF
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 2N7002EPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-70/SOT-323 FEATURE
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2N7002EPT
SC-70/SOT-323)
SC-70/SOT-323
200mA
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2N7002EGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 2N7002EGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-70/SOT-323 FEATURE
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2N7002EGP
SC-70/SOT-323
SC-70/SOT-323)
200mA
2N7002EGP
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PDF
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2N7002GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 2N7002GP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 m Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 .055 1.40 .047 (1.20)
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2N7002GP
OT-23
OT-23)
200mA
2N7002GP
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PDF
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2N7002PT
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 2N7002PT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 m Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 .055 1.40 .047 (1.20)
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2N7002PT
OT-23
OT-23)
200mA
2N7002PT
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PDF
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Untitled
Abstract: No abstract text available
Text: WILLAS FM120-M+ THRU 2N7002DW1T1 FM1200-M+ Small Signal MOSFET 115 mAmps,60 Volts 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers
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OD-123+
FM120-M+
2N7002DTHRU
FM1200-M+
OD-123H
0197FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
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PDF
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marking 702
Abstract: 2N7002LT ON
Text: WILLAS FM120-M+ THRU 2N7002LT1 FM1200-M+ Small Signal MOSFET 115 mAmps, 60 Volts 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers
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OD-123+
FM120-M+
2N7002LT
FM1200-M+
OD-123H
FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
marking 702
2N7002LT ON
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PDF
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l2n7002dw1t1g
Abstract: CASE 419B-02 sot363 ON Marking DS
Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps,60 Volts L2N7002DW1T1G N–Channel SC-88 • We declare that the material of product are Halogen Free and compliance with RoHS requirements. • ESD Protected:1000V MAXIMUM RATINGS Rating Symbol Value
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L2N7002DW1T1G
SC-88
195mm
150mm
3000PCS/Reel
8000PCS/Reel
OT-723
OD-723)
10Reel/Inner
l2n7002dw1t1g
CASE 419B-02
sot363 ON Marking DS
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002DMT1G N–Channel SC–74 • We declare that the material of product compliance with RoHS requirements. • ESD Protected:1000V MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage
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L2N7002DMT1G
195mm
150mm
10Reel/Inner
30KPCS/Inner
3000PCS/Reel
80KPCS/Inner
OT-723
OD-723
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PDF
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marking 72
Abstract: 10V 50mA zero voltage switch 2N7002T
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 2N7002T MOSFET Plastic-Encapsulate Transistors SOT-523 N-Channel FEATURES Power dissipation 1. GATE PD: 0.15 W (Tamb=25℃) 2. SOURCE 3. DRAIN Collector current ID: 115 mA Collector-base voltage
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OT-523
2N7002T
500mA
200mA
200mA
marking 72
10V 50mA zero voltage switch
2N7002T
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PDF
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k72 transistor
Abstract: transistor k72 2N7002DW SOT363 k72 diode 2N7002DW mosfet k72 k72 td
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors 2N7002DW MOSFET N-Channel FEATURES Power dissipation PD : 0.2 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range
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OT-363
2N7002DW
width300
k72 transistor
transistor k72
2N7002DW SOT363
k72 diode
2N7002DW
mosfet k72
k72 td
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L2N7002DMT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002DMT1G S-L2N7002DMT1G N–Channel SC–74 • We declare that the material of product compliance with RoHS requirements. • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring
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L2N7002DMT1G
S-L2N7002DMT1G
AEC-Q101
SC-74
195mm
150mm
10Reel/Inner
30KPCS/Inner
3000PCS/Reel
L2N7002DMT1G
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PDF
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L2N7002M3T5G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002M3T5G S-L2N7002M3T5G N–Channel SOT–723 3 • Pb−Free Package is Available. • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
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L2N7002M3T5G
S-L2N7002M3T5G
AEC-Q101
OT-723
L2N7002M3T5G
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marking 72
Abstract: 2N7002T
Text: SOD-523 Plastic-EncapsulateTransistors 2N7002T MOSFET N-Channel SOT-523 1. GATE 2. SOURCE FEATURES 3. DRAIN Power dissipation PD: 0.15 W (Tamb=25℃) Collector current ID: 115 mA Collector-base voltage VDS: 60 V Operating and storage junction temperature range
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OD-523
2N7002T
OT-523
500mA
200mA
200mA
marking 72
2N7002T
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PDF
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Untitled
Abstract: No abstract text available
Text: NTMFS4845N Power MOSFET 30 V, 115 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package
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NTMFS4845N
AND8195/D
NTMFS4845N/D
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9435DY
Abstract: 1153-B
Text: LT C 115 9 /LTC 115 9 -3 .3 /LT C 1159-5 l im TECHNOLOGY High Efficiency Synchronous Step-Down Switching Regulators F€ O TUR€ S D C S C R IP T IO n • Operation from 4V to 40V Input Voltage ■ Ultra-High Efficiency: Up to 95% ■ 20pA Supply Current in Shutdown
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OCR Scan
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16-Lead
551fi4b
on-77
DD116SS
5C179
9435DY
1153-B
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PDF
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