Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2007 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 1 2007 REVISIONS ALL RIGHTS RESERVED. P LTR DESCRIPTION B B1 1 DWN APVD REV PER ECO-09-020440 11SEP2009 CR JP REVISE PER ECO-14-006734 16MAY2014 RG MC CAGE MATERIAL: NICKEL SILVER, 0.25 THICK
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11SEP2009
ECO-14-006734
16MAY2014
ECO-09-020440
01SEP06
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 19 LOC CM ALL RIGHTS RESERVED. BY - 1 REVISIONS DIST 53 P 1 D LTR DESCRIPTION DATE DWN APVD E3 REVISED PER ECR-12-015771 11SEP2012 KH TM E4 REVISED PER ECR-13-016336 21OCT2013
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11SEP2012
ECR-12-015771
ECR-13-016336
21OCT2013
NYLON66/6
14OCT1999
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST - - P LTR A6 B C C1 C2 1 3 DESCRIPTION Tolerance added Change marking Printing Printing Date-Code drawing logo change 4 5 DWN DATE HD HD HD HD PH UKo UKo UKo UKo ZC 09SEP2009 11SEP2009 10MAY2010 20AUG2010
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09SEP2009
11SEP2009
10MAY2010
20AUG2010
16APR2013
COPYRIGHT2006
ECR-13-006763
C23303-A079-A007
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 20 LOC DIM L # .010 D REVISIONS DIST ES ALL RIGHTS RESERVED. 1 00 P LTR DESCRIPTION DATE DWN APVD E2 REV PER ECR-12-015720 11SEP2012 CZ SZ E3 REV PER ECR-13-004638 20MAR2013
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ECR-12-015720
11SEP2012
ECR-13-004638
20MAR2013
05JUL06
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11SEP
Abstract: No abstract text available
Text: REVISED ECR-07-018164 C.Z S.Y 11SEP '07
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ECR-07-018164
11SEP
11SEP
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Untitled
Abstract: No abstract text available
Text: QFN Package INA210, INA211 INA212, INA213 INA214 SC70 Package www.ti.com SBOS437E – MAY 2008 – REVISED JUNE 2013 Voltage Output, High or Low Side Measurement, Bi-Directional Zerø-Drift Series Current-Shunt Monitor Check for Samples: INA210, INA211, INA212, INA213, INA214
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INA210,
INA211
INA212,
INA213
INA214
SBOS437E
INA211,
INA213,
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SI4431CDY
Abstract: No abstract text available
Text: New Product Si4431CDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.032 at VGS = - 10 V - 9.0 0.049 at VGS = - 4.5 V - 5.8 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Si4431CDY
Si4431CDY-T1-E3
Si4431CDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized
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Si4804BDY
2002/95/EC
Si4804BDY-T1-E3
Si4804BDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SQ4940EY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 40 RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.055 ID (A)
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SQ4940EY
AEC-Q101
2002/95/EC
SQ4940EY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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s0913
Abstract: No abstract text available
Text: Si4486EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 7.9 0.028 at VGS = 6.0 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature
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Si4486EY
2002/95/EC
Si4486EY-T1-E3
Si4486EY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
s0913
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Untitled
Abstract: No abstract text available
Text: Si4484EY Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 6.9 0.040 at VGS = 6.0 V 6.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • 175 °C Maximum Junction Temperature
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Si4484EY
2002/95/EC
Si4484EY-T1-E3
Si4484EY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SI4850EY-t1g
Abstract: si4850
Text: Si4850EY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 60 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 8.5 0.031 at VGS = 4.5 V 7.2 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Si4850EY
2002/95/EC
Si4850EY-T1-E3
Si4850EY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SI4850EY-t1g
si4850
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*4947ad
Abstract: No abstract text available
Text: Si4947ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.080 at VGS = - 10 V - 3.9 0.135 at VGS = - 4.5 V - 3.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Si4947ADY
2002/95/EC
Si4947ADY-T1-E3
Si4947ADY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
*4947ad
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si4916
Abstract: No abstract text available
Text: Si4916DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.018 at VGS = 10 V 10 0.023 at VGS = 4.5 V 8.5 0.018 at VGS = 10 V 10.5 0.022 at VGS = 4.5 V
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Si4916DY
Si4916DY-T1-E3
Si4916DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si4916
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SOX28
Abstract: KDS Crystals DOC KDS Crystals through hole
Text: M41ST87Y M41ST87W 5.0 V and 3.3/3.0 V secure serial RTC and NVRAM supervisor with tamper detection and 128 bytes of clearable NVRAM Features Embedded crystal • 5.0, 3.3, or 3.0 V operation ■ 400 kHz I2C bus ■ NVRAM supervisor to non-volatize external
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M41ST87Y
M41ST87W
M41ST87Y:
M41ST87W:
SOX28
KDS Crystals DOC
KDS Crystals through hole
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Untitled
Abstract: No abstract text available
Text: Si4953ADY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.053 at VGS = - 10 V - 4.9 0.090 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Si4953ADY
2002/95/EC
Si4953ADY-T1-E3
Si4953ADY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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vk marking 6 pin ic
Abstract: iso 9141 si9243a
Text: Si9243A Vishay Siliconix Single-Ended Bus Transceiver DESCRIPTION FEATURES The Si9243AEY is a monolithic bus transceiver designed to provide bidirectional serial communication in automotive diagnostic applications. • Operating Power Supply Range 6 V VBAT 36 V
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Si9243A
Si9243AEY
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
vk marking 6 pin ic
iso 9141
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Diode HER 507
Abstract: No abstract text available
Text: Si4412DY Vishay Siliconix N-Channel 30-V D-S Rated MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC ID (A) 0.028 at VGS = 10 V
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Si4412DY
2002/95/EC
Si4412DY-T1-E3
Si4412DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Diode HER 507
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Si9407AEY
Abstract: No abstract text available
Text: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs
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Si9407AEY
2002/95/EC
Si9407AEY-T1-E3
Si9407AEY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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m955
Abstract: M9551 M95512-DF
Text: M95512-W M95512-R M95512-DR M95512-DF 512-Kbit serial SPI bus EEPROM Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 512 Kb (64 Kbytes) of EEPROM – Page size: 128 bytes SO8 (MN) 150 mil width
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M95512-W
M95512-R
M95512-DR
M95512-DF
512-Kbit
M95512-W
M95512DR
M95512-DF
200-year
m955
M9551
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Untitled
Abstract: No abstract text available
Text: Si4542DY Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 6.9 0.035 at VGS = 4.5 V 5.8 0.032 at VGS = - 10 V - 6.1 0.045 at VGS = - 4.5 V - 5.1 • Halogen-free According to IEC 61249-2-21
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Si4542DY
2002/95/EC
Si4542DY-T1-E3
Si4542DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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si4838
Abstract: No abstract text available
Text: Si4838DY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 25 0.004 at VGS = 2.5 V 20 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated
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Si4838DY
Si4838DY-T1-E3
Si4838DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si4838
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING 3 IS UNPUBLISHED. RELEASED FOR PUBLICATION BY ^ C O COPYRIGHT ELECTRONICS CORPORATION. 2 - LOC ALL INTERNATIONAL RIGHTS RESERVED. AF REVISIONS DIST 50 P LTR DESCRIPTION B1 REVISED PER E C R - 0 8 - 0 2 2 2 8 9 D DATE 11SEP08 DWN APVD HMR KR
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11SEP08
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Untitled
Abstract: No abstract text available
Text: 4 COPYRIGHT 3 | THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. I — .— LDC ALL RIGHTS RESERVED. DIST R E V ISIO N S AD 00 LTR DATE OWN APVD 11SEP 02 BC RP DESCRIPTION REV PER EC 0S12-0336-02 -C - D D 26.70 -t i
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0S12-0336-02
11SEP
223957PART
25/JAN/95
31MAR2000
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