Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    11PAGE Search Results

    11PAGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MT29F2G08AAC

    Abstract: SD-Card MMC AT91 5V ATMEL AT91 serial isp atmel AT91SAM-ICE
    Text: ARM-Based Products Application Group AT91SAM9RL-EK Test Software Revision Table: Revision 3.0 3.1 Date June 13, 2008 August 19,2008 Comments Initial release 1.update AT91 ISP and Jlink driver 2.add LCD demo 1/11pages ARM-Based Products Application Group Table of Contents


    Original
    AT91SAM9RL-EK 1/11pages AT91xxxxx 10/11pages AT91SAM9RL64EK AT91SAM9RL-EK. 11/11pages MT29F2G08AAC SD-Card MMC AT91 5V ATMEL AT91 serial isp atmel AT91SAM-ICE PDF

    E112081

    Abstract: No abstract text available
    Text: FicheE7/ASDrightangle22/05/0118:11Page2 SD D'Sub connectors - Stamped and Formed Contacts Spécifications DESCRIPTION MAIN CHARACTERISTICS RIGHT ANGLE, BOARD MOUNT CONNECTORS • A4 Style MIL footprint : UL File: E149426 • 1A Style (European footprint): UL File: E112081


    Original
    E149426 E112081 C24308 93425-HE5 E112081 PDF

    AT91SAM-ICE

    Abstract: MT29F2G08AAC AD1981B SD-Card MMC at91 programmer
    Text: ARM-Based Products Application Group AT91SAM9RL-EK Test Software Revision Table: Revision 3.0 3.1 3.2 Date June 13, 2008 August 19,2008 February 04,2009 Comments Initial release 1.update AT91 ISP and Jlink driver 2.add LCD demo 1.Fix the issue of LCD shakiness


    Original
    AT91SAM9RL-EK 1/11pages AT91xxxxx 10/11pages AT91SAM9RL64EK AT91SAM9RL-EK. 11/11pages AT91SAM-ICE MT29F2G08AAC AD1981B SD-Card MMC at91 programmer PDF

    0444c2

    Abstract: AT45CS1282 BA10 PA10 PA11 PA12 PA13
    Text: Features • Single 2.7V - 3.6V Supply • Dual-interface Architecture • • • • • • • • • • • – RapidS Serial Interface: 50 MHz Maximum Clock Frequency SPI Modes 0 and 3 Compatible for Frequencies up to 33 MHz – Rapid8™ 8-bit Interface: 20 MHz Maximum Clock Frequency


    Original
    336-byte 888-byte 488-byte 1056-byte 0444c2 AT45CS1282 BA10 PA10 PA11 PA12 PA13 PDF

    atmel 1138

    Abstract: 1273A-04
    Text: Introduction This document contains the latest information about the AVR data book and the AVR data sheets. All references to the data book refers to the August 1999 version of the “AVR RISC MICROCONTROLLER DATA BOOK”. All references to the AVR data sheets refer to the latest version of the AVR data


    Original
    24-bit atmel 1138 1273A-04 PDF

    Product Training Module

    Abstract: No abstract text available
    Text: Crystals Oscillators Filters Precision Timing Magnetics Engineered Solutions WWW.ABRACON.COM WWW.ABRACON.COM Introduction Purpose: Introduce the ASG series, Fixed Frequency XO & VCXO Objectives: - Explain the benefits of the ASG series of products - Provide overview of the primary features


    Original
    11-pages 30-minutes Si-530 FVXO-PC73BR 10MHz 50GHz 35GHz) May-2012 CA-92688 Product Training Module PDF

    1431T

    Abstract: TF861 Autodialer 1428-TR
    Text: S Toshiba TF831 PLAIN PAPER/LASER OR LAB ATO INC. RY BUYE R Test Report MID-VOLUME FACSIMILE MACHINES RECOMMENDED 8 • TE STED • Manufacturer: Toshiba America Information Systems, Inc. Irvine, CA Made in Japan Suggested retail price: $3,999, base machine; $4,498 as tested with 4-Mb


    Original
    TF831 64-level TF831, 1434-TR 1431T TF861 Autodialer 1428-TR PDF

    soic16w

    Abstract: wdc 1994 MLX90314 MLX90314AB SO16W
    Text: MLX90314AB Programmable Sensor Interface Features and Benefits • ■ ■ ■ ■ ■ Microprocessor-controlled signal conditioning for bridge-type sensors Suited for low-cost sensors: reduction of non-linearity by programmable coefficients External or internal temperature sensor for compensating temperature errors


    Original
    MLX90314AB 11VDC; 35VDC MLX90314 SOIC16w) QS9000, ISO14001 Aug/02 soic16w wdc 1994 MLX90314 MLX90314AB SO16W PDF

    MLX90314

    Abstract: SO16W
    Text: MLX90314 Programmable Sensor Interface Features and Benefits • ■ ■ ■ ■ ■ Microprocessor-controlled signal conditioning for bridge-type sensors Suited for low-cost sensors: reduction of non-linearity by programmable coefficients External or internal temperature sensor for compensating temperature errors


    Original
    MLX90314 11VDC; 35VDC SOIC16w) ISO/TS16949 ISO14001 Nov/04 MLX90314 SO16W PDF

    Tyco MCON 1.2

    Abstract: 114-18022 MS-7889
    Text: Application Specification Verarbeitungs-Spezifikation MCON 1.2 mm Contact System MCON 1.2 mm Kontaktsystem 114-18464 th 14 MAY 2013 Rev R Table of Contents Inhaltsverzeichnis 1.


    Original
    16MAR2012 16OCT2012 14MAY2013 11Page Tyco MCON 1.2 114-18022 MS-7889 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM5216165 Series 524,288-word x 16-bit x 2-bank Synchronous Dynamic RAM H IT A C H I ADE-203-280B Z Rev. 2.0 Jun. 20, 1997 Description All inputs and outputs are referred to the lising edge of the clock input. The HM5216165 is offered in 2 banks for improved performance.


    OCR Scan
    HM5216165 288-word 16-bit ADE-203-280B Hz/83 HM5216165-10H HM5216165-10H) HM5216165-10/15 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM5264165 Series HM5264805 Series HM5264405 Series 1,048,576-word X 16-bit x 4-bank Synchronous Dynamic RAM 2,097,152-word X 8-bit x 4-bank Synchronous Dynamic RAM 4,194,304-word X 4-bit X 4-bank Synchronous Dynamic RAM HITACHI ADE-203-497 Z Preliminary Rev. 0.3


    OCR Scan
    HM5264165 HM5264805 HM5264405 576-word 16-bit 152-word 304-word ADE-203-497 HM5264165, HM5264805, PDF

    Untitled

    Abstract: No abstract text available
    Text: •$ - M S M l- t t 5 6 V 1 6 4 0 0 2-B an k x 2,097,152-W ord x 4 -B it SYN CH RO N O U S DYN AM IC RAM DESCRIPTION The MSMS6V16400 is a 2-bank x 2,097,152-word x 4-bit synchronous Dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V, and the inputs and out puts are LVTTL Compatible.


    OCR Scan
    MSMS6V16400 152-word 4096cycles/64m$ PDF

    DQ131

    Abstract: MT48LC16M16A2TG8E
    Text: ADVANCE M IC R O N * I 2 56 M b : xV TCCHW LOOY.INC. SYNCHRONOUS DRAM nV ,1,5 SD R A M MT48LC64M4A2 - 16 Meg x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks For the latest data sh ee t revisions, p le a s e refer to the Micron


    OCR Scan
    192-cycle MT48LC64M4A2 MT48LC32M8A2 54-PIN 256Mb 256MSDRAM DQ131 MT48LC16M16A2TG8E PDF

    Untitled

    Abstract: No abstract text available
    Text: IS 4 2 S 1 6 1 0 0 512K Words x 16 Bits x 2 Banks 16-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION JULY 1999 DESCRIPTION FEATURES C lock frequency: 1 6 6 ,1 4 3 , 125, 100 MHz Fully synchronous; all signals referenced to a positive clock edge Two banks can be operated sim ultaneously and


    OCR Scan
    16-MBIT) IS42S16100 288-word 16-bit 50-Pin DR010-0B IS42S16100 143MHz 124MHz IS42S16100-6T PDF

    rft electronica

    Abstract: No abstract text available
    Text: HM52161 65 Series Preliminary 524,288-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI A ll inputs and outputs arc referred to the rising edge of the clock input. The H M 5 2 16165 is offered in 2 banks for improved performance. Features Rev. 0.0 Jul. 2 9 ,1 9 9 4


    OCR Scan
    HM52161 288-word 16-bit HM5216165TT-10 HM5216165TT-12 HM52161657T-15 400-mii 50-pin TTP-50D) Hz/83 rft electronica PDF

    Untitled

    Abstract: No abstract text available
    Text: HB526C164EN Series 524,288-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-628A Z Rev. 1.0 Feb. 7, 1997 Description The HB526C164EN belongs to 8-byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 8-byte processor applications. The HB526C164EN is a 5 12k X 64


    OCR Scan
    HB526C164EN 288-word 64-bit ADE-203-628A 16-Mbit HM5216165TT) 24C02) PDF

    77777AV

    Abstract: R7F7
    Text: H M 5 2 4 1 6 5 - 1 Preliminary 2 131,072-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI A ll inputs and outputs are referred to the rising edge of the clock input. The HM5241605 is offered in 2 banks for improved performance. Features m Rev. 0.0 Jan. 27,1995


    OCR Scan
    072-word 16-bit HM5241605 HM5241605TT-12 400-mil 50-pin TTP-50D) 295/200/Kinko M19T04? 77777AV R7F7 PDF

    48LC8M8

    Abstract: No abstract text available
    Text: MICRON* I 64M b: xV n V,1,5 TCCHWLOOY.INC. S D R A M MT48LC16M4A2 - 4 Meg x 4 x 4 banks MT48LC8M8A2 - 2 Meg x 8 x 4 banks MT48LC4M16A2 - 1 Meg x 16 x 4 banks SYNCHRONOUS DRAM F o r the late st data sheet revisions, plea se re fe r to the Micron Web site: w w w .m icron.com /m ti/m sp/htm l/datasheet.htm l


    OCR Scan
    096-cycle MT48LC16M4A2 MT48LC8M8A2 MT48LC4 54-PIN 64MSDRAM 48LC8M8 PDF

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan
    PDF

    Untitled

    Abstract: No abstract text available
    Text: HB526A264DB Series 1,048,576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module HITACHI ADE-203-607 Z Preliminary Rev. 0.1 May. 20, 1997 Description The HB526A264DB is a lM x 64 X 2 banks Synchronous Dynamic RAM Sm all Outline Dual In-line M emory Module (S.O.DIMM), mounted 8 pieces of 16-Mbit SDRAM (HM5216805TT/HM5216805LTT)


    OCR Scan
    HB526A264DB 576-word 64-bit ADE-203-607 16-Mbit HM5216805TT/HM5216805LTT) 24C02) 144-pin PDF

    Nippon capacitors

    Abstract: PAL/flyback BSH 12 n5
    Text: HB52A48DB Series, HB52A88DC Series HB52A48DB 32 MB Unbuffered SDRAM S.O.DIMM 4-Mword x 64-bit, 66 MHz Memory Bus, 1-Bank Module 4 pcs of 4 M x 16 components HB52A88DC 64 MB Unbuffered SDRAM S.O.DIMM 8-Mword x 64-bit, 66 MHz Memory Bus, 2-Bank Module (8 pcs of 4 M x 16 components)


    OCR Scan
    HB52A48DB HB52A88DC 64-bit, ADE-203-874B HM5264165TT) Nippon capacitors PAL/flyback BSH 12 n5 PDF

    eeprom 24c02

    Abstract: RD301 ASJ PTE
    Text: HB526C272EN-10IN, HB526C472EN-10IN 1.048.576-word x 72-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 72-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-693C Z Rev. 3.0 May. 15, 1997 Description The HB526C272EN, HB526C472EN belong to 8-byte DIMM (Dual In-line M emory Module) family, and


    OCR Scan
    HB526C272EN-10IN, HB526C472EN-10IN 576-word 72-bit ADE-203-693C HB526C272EN, HB526C472EN HB526C272EN eeprom 24c02 RD301 ASJ PTE PDF

    Nippon capacitors

    Abstract: No abstract text available
    Text: HB526C264EN Series, HB526C464EN Series 1.048.576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-629B Z Rev. 2.0 Mar. 17, 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and


    OCR Scan
    HB526C264EN HB526C464EN 576-word 64-bit ADE-203-629B HB526C264EN, Nippon capacitors PDF