BLS6G2731-120
Abstract: No abstract text available
Text: BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 — 14 November 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1.
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BLS6G2731-120;
BLS6G2731S-120
BLS6G2731-120
6G2731S-120
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Untitled
Abstract: No abstract text available
Text: 120 ATC www.vishay.com Vishay BCcomponents Aluminum Capacitors Axial High Temperature, High Ripple Current FEATURES 119 AHT-DIN smaller dimensions 118 AHT lower ESR higher ripple 120 ATC 125 °C 138 AML Fig. 1 QUICK REFERENCE DATA DESCRIPTION Nominal case sizes Ø D x L in mm
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: 120 ATC www.vishay.com Vishay BCcomponents Aluminum Capacitors Axial High Temperature, High Ripple Current FEATURES 119 AHT-DIN smaller dimensions 118 AHT lower ESR higher ripple 120 ATC 125 °C 138 AML Fig. 1 QUICK REFERENCE DATA DESCRIPTION Nominal case sizes Ø D x L in mm
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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po111
Abstract: ELNA capacitor 100 uf 50v transistor a09
Text: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in
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PTFA091201GL
PTFA091201HL
PTFA091201HL
120-watt
PG-63248-2
PG-64248-2
po111
ELNA capacitor 100 uf 50v
transistor a09
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BCP56
Abstract: LM7805 PTFA091201GL PTFA091201HL A0912
Text: PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in
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PTFA091201GL
PTFA091201HL
PTFA091201GL
PTFA091201HL
120-watt
PG-63248-2
PG-64248-2
BCP56
LM7805
A0912
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Untitled
Abstract: No abstract text available
Text: PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in
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PTFA091201E
PTFA091201F
PTFA091201E
PTFA091201F
120-watt
H-36248-2
H-37248-2
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BCP56
Abstract: LM7805 PTFA091201E PTFA091201F PTFA091201EV4
Text: PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in
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PTFA091201E
PTFA091201F
PTFA091201E
PTFA091201F
120-watt
H-36248-2
H-37248-2
BCP56
LM7805
PTFA091201EV4
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ceramic capacitor 103 z 2kv
Abstract: No abstract text available
Text: PTFA091201E PTFA091201F Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are thermally-enhanced, 120-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for GSM/EDGE and
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PTFA091201E
PTFA091201F
120-watt,
ceramic capacitor 103 z 2kv
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LM7805
Abstract: ptfa091201e BCP56 PTFA091201F
Text: PTFA091201E PTFA091201F Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091201E and PTFA091201F are thermally-enhanced, 120-watt, internally matched GOLDMOS FETs intended for ultralinear applications. They are characaterized for GSM/EDGE and
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PTFA091201E
PTFA091201F
PTFA091201E
PTFA091201F
120-watt,
LM7805
BCP56
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Untitled
Abstract: No abstract text available
Text: PTFA091203EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.
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PTFA091203EL
PTFA091203EL
120-watt,
H-33288-6
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capacitor
Abstract: capacitor 120 pF 142-0701-801 GRM42-6C0G121J50 capacitor 120 nF GRM42 l 0701 3214W-1-103E BZX284C5V1 EEVHB1V100P
Text: DB-54008L-470 BOM Component ID Description Value Case size Manufacturer Part Code C4 Capacitor 10 nF 1206 Murata GRM42-6X7R104K50 C3 Capacitor 1 nF 1206 Murata GRM42-6C0G102J50 C1 Capacitor 120 pF 1206 Murata GRM42-6C0G121J50 C2 Capacitor 120 pF 1206 Murata
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DB-54008L-470
GRM42-6X7R104K50
GRM42-6C0G102J50
GRM42-6C0G121J50
120pF
OD110
BZX284C5V1
PD54008L
capacitor
capacitor 120 pF
142-0701-801
GRM42-6C0G121J50
capacitor 120 nF
GRM42
l 0701
3214W-1-103E
BZX284C5V1
EEVHB1V100P
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Untitled
Abstract: No abstract text available
Text: PXAC201202FC Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz
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PXAC201202FC
PXAC201202FC
120-watt
H-37248-4
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TRANSISTOR tl131
Abstract: C805 capacitor C207 capacitor ATC200B103MW LM78L05ACM-ND TL131 LM78L05ACMND TL228 capacitor 471 c103 TRANSISTOR
Text: PTFA091203EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.
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PTFA091203EL
PTFA091203EL
120-watt,
H-33288-4/2
TRANSISTOR tl131
C805 capacitor
C207 capacitor
ATC200B103MW
LM78L05ACM-ND
TL131
LM78L05ACMND
TL228
capacitor 471
c103 TRANSISTOR
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tl136
Abstract: TRANSISTOR tl131 LM78L05ACM-ND LM78L05ACMND TL127 3882 PTFA091203EL
Text: PTFA091203EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.
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PTFA091203EL
PTFA091203EL
120-watt,
H-33288-6
tl136
TRANSISTOR tl131
LM78L05ACM-ND
LM78L05ACMND
TL127
3882
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ericsson 10159
Abstract: PTF10159 470-860 mhz Power amplifier w
Text: PTF 10159 120 Watts, 470–860 MHz GOLDMOS Field Effect Transistor Description The PTF 10159 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for large signal television amplifier applications from 470 to 860 MHz. It is rated at 120 watts power
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UT-85-25
1-877-GOLDMOS
1301-PTF
ericsson 10159
PTF10159
470-860 mhz Power amplifier w
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k1206
Abstract: G200 LDMOS transistor 1W
Text: PTF 10120 120 Watts, 1.8–2.0 GHz GOLDMOS Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output.
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K1206
1-877-GOLDMOS
1301-PTF
k1206
G200
LDMOS transistor 1W
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LM78L05ACM-ND
Abstract: LM78L05ACMND C210 TL122
Text: PTFA091203EL Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band. This device features internal I/O matching and thermally-enhanced
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PTFA091203EL
PTFA091203EL
120-watt,
H-33288-6
LM78L05ACM-ND
LM78L05ACMND
C210
TL122
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Untitled
Abstract: No abstract text available
Text: 120 Watts, 2110-2170 MHz GOLDMOS Field Effect Transistor PTF 102003 Description Key Features The PTF 102003 is a 120–watt, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold
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1/16W
1-877-GOLDMOS
1522-PTF
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Untitled
Abstract: No abstract text available
Text: PXAC261202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz Description The PXAC261202FC is a 120-watt LDMOS FET with an asymetric design for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path design,
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PXAC261202FC
PXAC261202FC
120-watt
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smd capa
Abstract: p33k
Text: Package 20275 120 Watts, 2110-2170 MHz PUSH/PULL LATERAL MOSFET PD21120R6 Description Key Features The PD21120R6 is a 120–watt, internally matched LDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. This device typically operates at 48% efficiency P-1dB and 14 dB linear gain. Full gold
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PD21120R6
PD21120R6
PCS6106TR
PCC103BCT
1/16W
smd capa
p33k
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Untitled
Abstract: No abstract text available
Text: PXAC261212FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 2496 – 2690 MHz Description The PXAC261212FC is a 120-watt LDMOS FET with an asymmetric designed for use in multi-standard cellular power amplifier applications in the 2496 to 2690 MHz frequency band. It features dual-path design,
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PXAC261212FC
PXAC261212FC
120-watt
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Untitled
Abstract: No abstract text available
Text: PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for
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PXAC201202FC
PXAC201202FC
120-watt
H-37248-4
pxac201202fc-gr1a
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Molex CE certificate
Abstract: E132002 LPS250
Text: 250 Watts LPS250 Series Total Power: 250 Watts Input Voltage: 85-264 VAC 120-300 VDC # of Outputs: Single Electrical Specs Input Input range Frequency Inrush current Efficiency EMI filter 85-264 VAC; 120-300 VDC 47-440 Hz 20 A max., cold start @ 25°C 75% typical at full load
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LPS250
EN55022
EN6100-3-2
Lo06027
Molex CE certificate
E132002
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atc 17-33
Abstract: 885R 470-860 mhz Power amplifier w C901 ptf10037
Text: ERICSSON ^ PTF 10037 120 Watts, 470-860 MHz LDMOS Field Effect Transistor Description The 10037 is an internally m atched, com m on source n-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 470 to 860 MHz. It is rated at 120 watts minimum
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OCR Scan
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PDF
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UT-85-25
atc 17-33
885R
470-860 mhz Power amplifier w
C901
ptf10037
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