Untitled
Abstract: No abstract text available
Text: ESMT M13S128168A Operation temperature condition -40°C~85°C Revision History Revision 1.0 03 Jan. 2007 - Original Revision 1.1 (19 Mar. 2008) - Add BGA package - Modify the waveform of Power up & Initialization Sequence - Modify the θ value of TSOPII package dimension
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M13S32321A
Abstract: No abstract text available
Text: ESMT M13S32321A DDR SDRAM 256K x 32 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK )
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M13S32321A
M13S32321A
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Untitled
Abstract: No abstract text available
Text: ESMT M13S128168A Revision History Revision 0.1 15 Jan. 2002 - Original Revision 0.2 (19 Nov. 2002) -changed ordering information & DC/AC characteristics Revision 0.1 Revision 0.2 M13S128168A - 5T M13S128168A - 6T M13S128168A - 6T M13S128168A - 7.5AB Revision 0.3 (8 Aug. 2003)
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M13S128168A
M13S128168A
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Untitled
Abstract: No abstract text available
Text: ESMT M13S128168A Revision History Revision 0.1 15 Jan. 2002 - Original Revision 0.2 (19 Nov. 2002) -changed ordering information & DC/AC characteristics Revision 0.1 Revision 0.2 M13S128168A - 5T M13S128168A - 6T M13S128168A - 6T M13S128168A - 7.5AB Revision 0.3 (8 Aug. 2003)
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M13S128168A
M13S128168A
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DDR266
Abstract: No abstract text available
Text: Memory Module Specification KVR266X72C2/256 CL2 DDR266 SDRAM 184-Pin ECC Dual In-Line Memory Module DIMM DESCRIPTION: This document describes ValueRAM's 32M x 72-bit (256MB), CAS Latency 2 (CL2) SDRAM (Synchronous DRAM) DDR266 ECC memory module. The components on this
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KVR266X72C2/256
DDR266
184-Pin
72-bit
256MB)
133MHz,
KVR266X72C2/256
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Untitled
Abstract: No abstract text available
Text: ESMT M13S128168A Operation temperature condition -40°C~85°C Revision History Revision 1.0 03 Jan. 2007 - Original Elite Semiconductor Memory Technology Inc. Publication Date : Jan. 2007 Revision : 1.0 1/48 ESMT M13S128168A Operation temperature condition -40°C~85°C
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M13S128168A
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rc0510
Abstract: RC05 RC0910
Text: Leaded RF Chokes – RC Series RC Series Features l l l Product Identification Low cost Wide range of inductance High reliability Electrical Parameters RC0508£-1R0K-N 1.0 7.96 30 155 D.C Resistanc e Ω Max 0.186 RC0508£-1R2K-N 1.2 7.96 30 145 0.15 1670
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RC0508
rc0510
RC05
RC0910
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M13S256328A
Abstract: No abstract text available
Text: ESMT M13S256328A DDR SDRAM 2M x 32 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK )
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M13S256328A
M13S256328A
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M13S64164A
Abstract: No abstract text available
Text: ESMT Preliminary M13S64164A Revision History Revision 0.1 23 Oct. 2006 - Original Revision 0.2 (06 Jun. 2007) - Add BGA type spec Revision 0.3 (20 Jul. 2007) - Modify BGA assignment Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2007
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M13S64164A
M13S64164A
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Untitled
Abstract: No abstract text available
Text: ESMT Preliminary M13S128168A Revision History Revision 0.1 15 Jan. 2002 - Original Revision 0.2 (19 Nov. 2002) -changed ordering information & DC/AC characteristics Revision 0.1 Revision 0.2 M13S128168A - 5T M13S128168A - 6T M13S128168A - 6T M13S128168A - 7.5AB
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M13S128168A
M13S128168A
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rc0510
Abstract: No abstract text available
Text: Leaded RF Chokes – RC Series RC Series Features l l l Product Identification Low cost Wide range of inductance High reliability Electrical Parameters RC0508£-1R0K-N 1.0 7.96 30 155 D.C Resistanc e Ω Max 0.186 RC0508£-1R2K-N 1.2 7.96 30 145 0.15 1670
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RC0508
rc0510
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SL1016
Abstract: PBY160808T-201Y-N PBY160808T-600Y-N PBY160808T-601Y-N PBY100505T-121Y-N PBY160808T-110Y-N UPB321611T-151Y-N smd diode Lf PBY201209T-601Y-N PBY321611T-601Y-N
Text: www.yageo.com RoHS Compliant ISO-9001, ISO-14001 CERTIFIED INDUCTORS / BEADS INDEX 4 18 21 28 33 37 42 48 51 55 58 62 66 69 72 78 81 84 88 94 97 106 110 115 129 134 137 145 148 151 156 158 161 164 168 172 175 179 183 186 SMD Chip Beads [SB/NB/HF/GB/PB/UPB Series]
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ISO-9001,
ISO-14001
SL1016
PBY160808T-201Y-N
PBY160808T-600Y-N
PBY160808T-601Y-N
PBY100505T-121Y-N
PBY160808T-110Y-N
UPB321611T-151Y-N
smd diode Lf
PBY201209T-601Y-N
PBY321611T-601Y-N
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PBY 386
Abstract: SL1016 PBY160808T-601Y-N LVS404018-3R3 PBY321611T-601Y-N PBY160808T-110Y-N NBQ160808T-241Y-N SBCB656030T-301-N PBY160808T-121Y-N UPB453215T-700Y-N
Text: 奇力新2011封面-1.jpg 1224 x 1745 x 24 Molding Power Choke – MHCC,MHCI Series MHCCMHCI Series MHCC series is designed for low profile type with low RDC and ultra large current. Its molded magnetic shielded type is suitable for high-density mounting and ultra low buzz noise. Soldering conditions
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BCC1307RI-302-N
BCC1307RI-202-N
15max
BCC1307RI-102-N
BCC1307RI-601-N
HP-4263B
BCC1608RIBCC1810RI-
BCC2208RI-
BCC2513RIBCC3113RI-
PBY 386
SL1016
PBY160808T-601Y-N
LVS404018-3R3
PBY321611T-601Y-N
PBY160808T-110Y-N
NBQ160808T-241Y-N
SBCB656030T-301-N
PBY160808T-121Y-N
UPB453215T-700Y-N
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KVR266X64C2
Abstract: DDR266
Text: Memory Module Specification KVR266X64C2/256 CL2 DDR266 SDRAM 184-Pin Dual In-Line Memory Module DIMM DESCRIPTION: This document describes ValueRAM's 32M x 64-bit (256MB), CAS Latency 2 (CL2) SDRAM (Synchronous DRAM) DDR266 memory module. The components on this module
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KVR266X64C2/256
DDR266
184-Pin
64-bit
256MB)
133MHz,
184-pin
120Kons
KVR266X64C2/256
KVR266X64C2
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Untitled
Abstract: No abstract text available
Text: ESMT M13S128168A DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK )
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M13S128168A
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Untitled
Abstract: No abstract text available
Text: 5 % Resistor Assortment Kit 100 V alu es Features: • 3 Storage Systems • • • • E 24 Values Ohm on l.on 4.70 ion i2n isn isn 2on Excellent For Labs Design In & Prototype Replaceable When Empty Optional Drawer Set Ohm 75n 82n loon i2on ison ison 2oon
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120Kn
390Kn
470Kn
510Kn
220Kn
560Kn
680Kn
750Kn
820Kn
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melody IC
Abstract: 8 sound effects generator IC 16-DIP HT2887 8050 s cmos sound generator d 9329 TOY SOUND sound effects chip SK 8050 S
Text: HOLTEK r r HT2887 Sound Effect and Melody Generator Features Auto power-off function Directly drive LED s or a piezo L O l or L 0 2 pad by m ask option 128-note melody PLA memory 256-note sound effect memory 128kHz system clock Minimum external components
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HT2887
128-note
256-note
128kHz
HT2887
120kn
melody IC
8 sound effects generator IC
16-DIP
8050 s
cmos sound generator
d 9329
TOY SOUND
sound effects chip
SK 8050 S
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2x lines of 5X7 dots matrix of characters
Abstract: No abstract text available
Text: O K I Semiconductor MSM6562B-XX DOT MATRIX LCD CONTROLLER WITH 16 DOT COMMON DRIVER AND 100 DOT SEGMENT DRIVER G EN ERAL DESCRIPTION T he MSM6562B-xx controls a character type dot m atrix L C D in com bination w ith an 8-bit or 4bit m icrocontroller. T h e MSM6562B-xx can control a d isp lay of up to 40 characters. W it h the d isp lay data serial
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MSM6562B-XX
MSM6562B-xx
MSM6562B-xx,
2x lines of 5X7 dots matrix of characters
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M1C2951
Abstract: M10295 MIC295103BN
Text: T MICREL SEMIC ONDU CTOR 34E d a boafian dgooshb s e s m r l M1C2950-02/03 and M1C2951-01/02/03 E fiE S S 1! Adjustable Micropovver Voltage Regulators Preliminary Information 7 ^ S S - l l - 2 3 General Description Features The MIC2950 and MIC2951 are"bulletproof" micropower
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M1C2950-02/03
M1C2951-01/02/03
MIC2950
MIC2951
LP2950
LP2951,
MIC2950/
MIC2950/MIC2951
LP2950/LP2951.
M1C2951
M10295
MIC295103BN
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15VPH
Abstract: I-10K
Text: CONSUMER MICROCIRCUITS LTD PRODUCT INFORMATION! SELECTIVE SIGNALLING DEVICES Obsolete Product - For Information Only '07 SERIES FX-107 GENERAL DESCRIPTION The FX-107, FX-207 and FX-307 are a powerful and flexible fam ily of high performance m onolithic signalling devices,
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FX-107,
FX-207
FX-307
FX-207,
FX-307,
C-073
15VPH
I-10K
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rgn354
Abstract: RGN2004 VCL11 Telefunken ecl11 ECL11 funkschau REN1004 RE074 ebl21 rgn 1064
Text: Preis 2.50 RM FUNKSCHAURöhrenaustauschtabelle Austausch deutscher Röhren untereinander Von Fritz Kunze Sonderdruck au s der FUNKSCHAU A usgabe 1944 FUNKSCHAU-VERLAG / MÜNCHEN 15 Austausch deutscher Röhren untereinander W eshalb eine neue Röhrenliste?
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Untitled
Abstract: No abstract text available
Text: About Lab Kits General: Engineers and designers find Lab Kits convenient and economical. Each Lab Kit contains a broad range of the most popular components. Assembly: Lab Kits are available on tape and reel for automated assembly on pick-andplace m achines or in bulk bags and
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SM5819
40Vtms
BT2222A
BT2907A
BT3904
BT3906
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vr 0511 mb
Abstract: ic 4063 AM 4063 pin diagram of ic 4053 MB4063 A9708
Text: 6-CHANNEL 8-BIT AID CONVERTER SUBSYSTEM F U JIT S U MB 4053 MB 4063 May 1986 E d itio n 3.0 6-CHANNEL 8-BIT A/D CONVERTER SUBSYSTEM The Fujitsu MB 4053 and MB 4063 are 6-channel, 8 -bit, single-slope A /D converter subsystem designed to be used in a microprocessor based data con
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16-pin
16-LEAD
DIP-16P-M01)
FPT-16P-M02I
vr 0511 mb
ic 4063
AM 4063
pin diagram of ic 4053
MB4063
A9708
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LM321
Abstract: LM221 LM121A op amp LM321
Text: LM221/LM321 National Semiconductor LM221/LM321 Precision Preamplifiers General Description The LM221 series are precision preamplifiers designed to operate with general purpose operational amplifiers to dras tically decrease dc errors. Drift, bias current, common mode
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LM221/LM321
LM221/LM321
LM221
IM1031
LM321
LM121A
op amp LM321
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