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    transistor motorola 236

    Abstract: motorola transistor m 237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GY25N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO-264 25 A @ 90 C 38 A @ 25°C 1200 VOLTS


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    GY25N120D transistor motorola 236 motorola transistor m 237 PDF