125OC
Abstract: 55N50F
Text: HiPerRFTM Power MOSFETs IXFN 55N50F VDSS ID25 F-Class: MegaHertz Switching RDS on D N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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55N50F
OT-227
E153432
125OC
728B1
125OC
55N50F
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To334
Abstract: TO-224 TYPE MPE NISSEI MMC nissei nissei MMX Mmc 4001 nissei capacitors MMX 450 To104 nissei capacitor MMX nissei capacitor APS
Text: Products Summary Dimensions Characteristic graph Type POLYESTER FILM CAPACITOR AMZ Features Very small size, especially in H dimension, which is advantageous to save space of PC Board. Good reputations for use in general and industrial application. Small allowance in the lead pitch dimensions.
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00047F
to104
to103
to393
To334
TO-224
TYPE MPE NISSEI
MMC nissei
nissei MMX
Mmc 4001
nissei capacitors MMX 450
nissei capacitor MMX
nissei capacitor APS
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MG650
Abstract: MG655 MG750-15 MP900 MV217 MV228 MV234 MV261 mv2342 mg750 caddock
Text: Page 2 of 2 Type MG Precision High Voltage Resistors Type MV Low Resistance Power Film Resistors MV Low Resistance Power Film Resistors Type MG Precision High Voltage Resistors Type Low Resistance Power Film Resistors Type MG Precision High Voltage Resistors
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50Range
750Tel:
44caddock
medical20electronics.
countryderating870
MG680
MG710
IL110
MG650
MG655
MG750-15
MP900
MV217
MV228
MV234
MV261
mv2342
mg750 caddock
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Untitled
Abstract: No abstract text available
Text: HellermannTyton HellermannTyton is a leading, global manufacturer of systems and solutions which help worldclass customers better manage and identify wire, cable, and components. HellermannTyton is proud to manufacture products in Milwaukee, Wisconsin, our
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Untitled
Abstract: No abstract text available
Text: VFB1012D Ultra-High-Precision Z-Foil Ball Grid Array BGA Surface-Mount Voltage Divider features • Temperature coefficient of resistance (TCR) – Absolute: ± 0.05 ppm/°C typical (0 °C to + 60 °C) – Tracking: 0.1 ppm/°C typical • Power coefficient of resistance (PCR) tracking (“∆R due to self heating”): 5 ppm at
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VFB1012D
08-Jan-09
VMN-PT0161-0904
08-Jan-09
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4216100
Abstract: 4216100-70
Text: DATA SHEET MOS INTEGRATED CIRCUIT MD42S16100, 4216100,42S17100,4217100 16 M-BIT DYNAMIC RAM 16 M-WORD BY 1-BIT, FAST PAGE MODE DESCR IPTIO N The /¿PD42S16100, 4216100, 42S17100, 4217100 are 16 777 216 w ords by 1 bit dynam ic CMOS RAMs. These differ in refresh cycle and the /iPD42S16100, 42S17100 can execute CAS before RAS self refresh. They
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MD42S16100,
42S17100
uPD42S16100
uPD4216100
uPD42S17100
uPD4217100
/iPD42S16100,
//PD42S16100,
4216100
4216100-70
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24C24
Abstract: c24 06 13
Text: Amphenol Sine Systems* Pyfe>Co»ifie<:ieifs Corpc-raiKW'* STRAIGHT PLUG To specify a complete plug, substitute the Dash No. o f the contact insert selected, for the Asterisk C in the A PLUG WITH JACK COUPLING NUT SHOULD BE USED WfTH INSERTS HAVING 37 OR MORE CONTACTS
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13/l6
ZoZPLD-1012-*
125to
24C24
c24 06 13
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4800L
Abstract: IC-3052B uPD424800 UPD42S480
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT juPD42S4800L, 424800L 3.3 V OPERATION 4 M-BIT DYNAMIC RAM 512 K-WORD BY 8-BIT, FAST PAGE MODE Description The /¿PD42S4800L, 424800L are 524 288 words by 8 bits dynamic CMOS RAMs. The fast page mode capability realize high speed access and low power consumption.
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uPD42S4800L
uPD424800L
PD42S4800L,
424800L
PD42S4800L
28-pin
//PD42S4800L-A70,
424800L-A70
/JPD42S4800L-A80,
4800L
IC-3052B
uPD424800
UPD42S480
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d2396
Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
Text: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .
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2SK2503
RK7002
TC363TS
DTC314TS
TC114G
100mA
TA124G
DTC144G
d2396
TRANSISTOR PNP B1443
D2396 equivalent
B1569A
TRANSISTORS PNP 50 V 1 A B1443
B1186A
transistor c5147
b1344
transistor equivalent b1443
K2460
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M-tron VCXO
Abstract: MTRON
Text: LYNCH CORP/ M-TRON 3D E ILCMT Sb3221û Q0DQ5MÛ 5 D - 7 0 0 -^ -0 0 ~ Comef/We £xctf/&?ce MS Series HCMOS Oscillators Miniature Surface Mountable VCXO and XO P a r tin g M S Series oscillators are TTL compatible H C M O S oscillators hermetically sealed in low-profile ceramic 6 pin packages. They
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Sb3221û
M-tron VCXO
MTRON
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68705R
Abstract: MC68705P3/R3/U3
Text: MOTOROLA m SEMICONDUCTOR TECHNICAL DATA MC68705R5 Technical Summary 8-Bit EPROM Microcontroller Unit 3 The MC68705R5 HMOS Microcontroller Unit (MCU) is an EPROM member of the MC6805 Family of microcontrollers. The user programmable EPROM allows program changes and lower volume
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MC68705R5
MC6805
M6805
M146805
M6805UM
P06/INT2I
JP01/AN1
P06/VRHt
68705R
MC68705P3/R3/U3
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Untitled
Abstract: No abstract text available
Text: ANALOGUE_ _ _ INTEGRATED CONTROL, 0§ 0 S.A. I- 0 B A P H D IS P L A Y INDUSTRIAL D H IV E B S F e a tu r e s : F o r d r iv in g 5 o r i f u se d i n p a i r 10 n m s e r i a l b a r d i s p l a y a t 0 t o 20 mA c u r r e nt . O p e ratin g tem p e ratu re : . - 2 5 .+ 7 0 ° C
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Untitled
Abstract: No abstract text available
Text: MwT-8 GaAs FET DEVICE . iM ic r o Wave Techno lo g y 4268 Solar Way Fremont, ÇA 94538 415-651-6700 FAX 415-651-2208. MICROIilAVE TECHNOLOGY 1 -/» , 37E D iEiEiEEEEIiroi 1- - 1 3- *- 125 0.3 M ICRON REFRACTORY METAL/Au GATES ’• A! 3“ u w uj y u 1;
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l241GD
Q0GQ04S
140ID
125-to
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