EDI8L24129V
Abstract: No abstract text available
Text: EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multi-layer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24129V is ideal for creating a single chip memory solution
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EDI8L24129V
128Kx24
EDI8L24129VxxBC
128Kx8
EDI8L24129V
DSP5630x
21060L
21062L
EDI8L24129V,
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION 128Kx24 bit CMOS Static The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times,
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EDI8L24129V
128Kx24
EDI8L24129VxxBC
128Kx8
DSP5630x
21060L
21062L
EDI8L24129V,
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DSP5600x
Abstract: MO-163
Text: EDI8L24128C 128Kx24 Asynchronous SR AM, 5V SRAM, FEATURES DESCRIPTION n 128Kx24 bit CMOS Static n Random Access Memory Array The EDI8L24128CxxBC is a 5V, three megabit SRAM constructed with three 128Kx8 die mounted on a multi-layer laminate substrate. With 12 to 15ns access times, x24 width
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EDI8L24128C
128Kx24
EDI8L24128CxxBC
128Kx8
EDI8L2418C
DSP5600x
MO-163
EDI8L24128C12BC
MO-163
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EDI8L24128C
Abstract: No abstract text available
Text: White Electronic Designs EDI8L24128C 128Kx24 Asynchronous SRAM, 5V FEATURES DESCRIPTION 128Kx24 bit CMOS Static Random Access Memory Array Fast Access Times: 12 and 15ns Master Output Enable and Write Control TTL Compatible Inputs and Outputs Fully Static, No Clocks
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EDI8L24128C
128Kx24
MO-163)
DSP5600xTM
EDI8L24128CxxBC
128Kx8
EDI8L2418C
MO-163
EDI8L24128C
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DSP5630x
Abstract: p 602 EDI8L24129V
Text: White Electronic Designs EDI8L24129V 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION 128Kx24 bit CMOS Static The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times,
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EDI8L24129V
128Kx24
EDI8L24129VxxBC
128Kx8
DSP5630x
21060L
21062L
EDI8L24129V,
DSP5630x
p 602
EDI8L24129V
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EDI8L24128C
Abstract: No abstract text available
Text: EDI8L24128C White Electronic Designs 128Kx24 Asynchronous SRAM, 5V FEATURES DESCRIPTION 128Kx24 bit CMOS Static The EDI8L24128CxxBC is a 5V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 12 to 15ns access times, x24
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EDI8L24128C
128Kx24
EDI8L24128CxxBC
128Kx8
EDI8L2418C
DSP5600x
MO-163)
MO-163
EDI8L24128C
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7665
Abstract: MO-47AE
Text: EDI8L24128V 128Kx24 SRAM 3.3 Volt ADVANCED 128Kx24 CMOS High Speed Static RAM Features 128Kx24 bit CMOS Static Random Access Memory Array • Fast Access Times: 12 and 15ns • Individual Byte Enables • User Configurable Organization with Minimal Additional Logic
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EDI8L24128V
128Kx24
MO-47AE)
EDI8L24128V
no8V15AC
MO-47AE
7665
MO-47AE
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Untitled
Abstract: No abstract text available
Text: EDI8F24128C 128Kx24 SRAM Module 128Kx24 Static RAM CMOS, High Speed Module Features The EDI8F24128C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This module is constructed from three 128Kx8 Static RAMs in SOJ packages on an epoxy laminate FR4 board.
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EDI8F24128C
128Kx24
EDI8F24128C
128Kx8
EDI8F24128C20MZC
EDI8F24128C25MZC
EDI8F24128C35MZC
01581USA
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truth table Static Random Access Memory SRAM
Abstract: EDI8L24128C MO-47AE
Text: EDI8L24128C 128Kx24 SRAM Module ADVANCED 128Kx24 CMOS High Speed Static RAM Features 128Kx32 bit CMOS Static Random Access Memory Array • Fast Access Times: 15, 17, and 20 • Individual Byte Enables • User Configurable Organization with Minimal Additional Logic
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EDI8L24128C
128Kx24
128Kx32
MO-47AE)
EDI8L24128C
EDI8L24128C20AC
EDI8L24128C15AC
EDI8L24128C17AC
truth table Static Random Access Memory SRAM
MO-47AE
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Untitled
Abstract: No abstract text available
Text: EDI8L24129V White Electronic Designs 128Kx24 SRAM 3.3 Volt FEATURES DESCRIPTION The EDI8L24129VxxBC is a 3.3V, three megabit SRAM constructed with three 128Kx8 die mounted on a multilayer laminate substrate. With 10 to 15ns access times, x24 width and a 3.3V operating voltage, the EDI8L24129V
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EDI8L24129V
128Kx24
EDI8L24129VxxBC
128Kx8
DSP5630x
21060L
21062L
EDI8L24129V,
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Untitled
Abstract: No abstract text available
Text: ^ ED I Electronic D esleís lr>c. EDI8F24128C High Speed Three Megabit SRAM Module 128Kx24 Static RAM CMOS, High Speed Module IP IH IiU iD lM flP Features The ED I8F24128C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This module is
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EDI8F24128C
128Kx24
I8F24128C
128Kx8
EDI8F24128C
JT/77L
EDI8F24128C25MZC
EDI8F24128C30MZC
EDI8F24128C35MZC
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Untitled
Abstract: No abstract text available
Text: □PM D PS16616 7 Dense-Pac Microsystems. Inc. 256KX1/128KX2 C M O S SRAM MODULE O NOT RECOMENDED FOR NEW DESIGNS D E SC R IP T IO N : The D P S1 6 6 1 6 7 is a 256K X 1 or 128KX2 bit Static Random Access M em ory SR A M fabricated using sixteen 16KX1 C M O S SRAM s. The memory utilizes
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PS16616
256KX1/128KX2
128KX2
16KX1
256KX1
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Untitled
Abstract: No abstract text available
Text: ^EDI E D I8L24129V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS, INC Asynchronous, 3.3V, 128Kx24 SRAM Features The EDI8L24129\taBC is a 3.3V, three megabit SRAM 128Kx24 bit CMOS Static Random Access Memory Array constructed with three 128Kx8 die mounted on a multi
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I8L24129V
128KX24
128Kx24
EDI8L24129\taBC
128Kx8
EDI8L24129V
DSP5630x
21060L
21062L
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Untitled
Abstract: No abstract text available
Text: WDI EDI8L24128V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS INC ADVANCED 128Kx24 CMOS High Speed Static RAM F e a tu re s The EDI8L24128V is a high speed, 3.3 volt, high perform ance, three megabit density Static RAM organized as a 128Kx24 bit array. Fully asynchronous circuitry is used, requiring no clocks or
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EDI8L24128V
128KX24
MO-47AE)
MO-47AE
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CU257
Abstract: A639 3234J
Text: ^EDI EDI8F24128C ELECTRONIC DESIGNS INC. High Speed Three Megabit SRAM Module 128Kx24 Static RAM CMOS, High Speed Module Features The EDI8F24128C is a high speed 3 megabit Static 128Kx24 bit CMOS Static RAM module organized as 128K words by 24 bits. This Random Access Memory
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128Kx24
EDI8F24128C
EDI8F24128C
128Kx8
A0-A16
DQ0-DQ23
DI8F24128C20MZC
DI8F24128C25MZC
CU257
A639
3234J
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Untitled
Abstract: No abstract text available
Text: DPS166167 □PM Dense-Pac Microsystems. Inc. ^ 256KX1/128KX2 CMOS SRAM MODULE NOT RECOMENDED FOR NEW DESIGNS DESCRIPTION: The DPS166167 is a 256K X 1 or 128KX2 bit Static Random Access Memory SRAM fabricated using sixteen 16KX1 C M O S SRAMs. The memory utilizes
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DPS166167
256KX1/128KX2
DPS166167
128KX2
16KX1
S166167
125-C
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EI24
Abstract: EI-24
Text: EDI8F24128C W 3 X ELECTRONIC. DESIGNS, INC 128KX24 SRAM Module !28Kx24Static RAM CMOS, High SpeedModrfe Features TTie EDI8F24128C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This module is 128Kx24 bit CMOS Static constructed from threel 28Kx8 Static RAMs in SOJ packages
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EDI8F24128C
128KX24
28Kx24Static
EDI8F24128C
28Kx8
EDI8F24128C20MZC
EDI8F24128C25MZC
EDI8F24128C35MZC
EI24
EI-24
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512KX24
Abstract: 128KX24
Text: ma DSP SOLUTIONS aSCTRONIC DÉSKSN& W C X24ASYNCHRONOUS FAMILY 128K AND 512Kx24 SV/3.3V EDI's x24 Asynchronous SRAM family is de signed in support of Analog Devices ADSP- * 2106x DSPs. The family includes densities of 128Kx24 and 5!2Kx24. The family of devices
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X24ASYNCHRONOUS
512Kx24
2106x
128Kx24
2Kx24.
MO-47AE
EDI8L24128CxxAC
EDI8L24512CxxAC
EDI8L24128VxxAC
EDI8L24512VxxAC
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Untitled
Abstract: No abstract text available
Text: ^ E D I E D I 8 F 2 4 1 2 9 C Electronic Designs Inc. High Speed Three Megabit SRAM Module 128KX24 Static RAM CMOS, High Speed Module D P ÎF Û Ü M T D O M Features The EDI8F24129C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This
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EDI8F24129C
128KX24
EDI8F24129C
128Kx8
0001b
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DSP5630x
Abstract: EDI8L24129V
Text: ^EDI ED I8L24129V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS INC Asynchronous, 3.3V, 128Kx24 SRAM Features 128Kx24 bit CMOS Static Random Access Memory Array • Fast Access Times: 10,12, and 15ns • Master Output Enable and Write Control • TTL Compatible Inputs and Outputs
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EDI8L24129V
128KX24
MO-163)
DSP5630xâ
EDI8L24129VxxBC
128Kx8
EDI8L24129V10BC
EDI8L24128V12BC
DSP5630x
EDI8L24129V
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truth table Static Random Access Memory SRAM
Abstract: No abstract text available
Text: ^EDI, EDI8F24128C 128Kx24 SRAM Module ELECTRONIC DESIGNS N C 128Kx24 Static RAM CMOS, High SpeedModule Features The EDI8F24128C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This module is 128Kx24 bit CMOS Static constructed from three 128Kx8 Static RAMs in SOJ packages
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EDI8F24128C
128Kx24
EDI8F24128C
128Kx8
323Dim
EDBF24128C
truth table Static Random Access Memory SRAM
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Untitled
Abstract: No abstract text available
Text: ^EDI EDI8F24128C ELECTRONIC DESIGNS INC. • High Speed Three Megabit SRAM Module 128KX24 Static RAM CMOS, High Speed Module Features The EDI8F24128C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This module is constructed from three 128Kx8 Static RAMs in
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EDI8F24128C
128KX24
EDI8F24128C
128Kx8
DQ8-DQ15
DQ16-DQ23
00D14MH
EDI8F24128C20MZC
EDI8F24128C25MZC
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Untitled
Abstract: No abstract text available
Text: ^EDI E D I8L24129V 128KX24 SRAM 3.3 Volt ELECTRONIC DESIGNS, INC Asynchronous, 3.3V, 128Kx24 SRAM Features The EDI8L24129VxxBC is a 3.3V, three m egabit SRAM 128Kx24 bit CMOS Static constructed with three 128Kx8 die mounted on a m ulti Random Access Memory Array
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I8L24129V
128KX24
128Kx24
EDI8L24129VxxBC
128Kx8
EDI8L24129V
SP5630x
EDI8L24129V15BI
MO-163
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Untitled
Abstract: No abstract text available
Text: WEDl EDI8F24128C 128Kx24 SRAM Module ELECTRONIC DE9GNS. « C . 128KX24 Static RAM CMOS, High Speed Module Features The EDI8F24128C is a high speed 3 megabit Static RAM module organized as 128K words by 24 bits. This module is constructed from three 128Kx8 Static RAMs in SOJ packages
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EDI8F24128C
128Kx24
EDI8F24128C
128Kx8
multi15
EDBF24128C
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