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Catalog Datasheet	MFG & Type	Document Tags	PDF
12M6500 Abstract: 5SMX12M6500 Text: VRRM = IF = 6500 V 50 A Fast-Diode Die 5SLX 12M6500 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1666-01 July 07 • • • • Fast and soft reverse recovery Low losses Large SOA Passivation: SIPOS and Silicon Nitride plus Polyimide Maximum rated values 1 Parameter	Original	12M6500 5SYA1666-01 CH-5600 12M6500 5SMX12M6500	PDF
5STP 12M6200 Abstract: 12M6500 Text: VDSM = 6500 V ITAVM = 1330 A ITRMS = 2080 A ITSM = 22000 A VT0 = 1.20 V rT = 0.600 mΩ Phase Control Thyristor 5STP 12M6500 Doc. No. 5SYA1004-03 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	5SYA1004-03 12M6500 12M6500 12M6200 12M5800 67xVDRM 11ing CH-5600 5STP 12M6200	PDF
12M6500 Abstract: abb s 212 ABB thyristor 5 5STP12M6500 Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 6500 V 1330 A 2080 A 22000 A 1.20 V 0.600 mΩ Ω Phase Control Thyristor 5STP 12M6500 Doc. No. 5SYA1004-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	12M6500 5SYA1004-03 12M6200 12M5800 CH-5600 12M6500 abb s 212 ABB thyristor 5 5STP12M6500	PDF
5SMX12M6500 Abstract: No abstract text available Text: VRRM = IF = 6500 V 50 A Fast-Diode Die 5SLX 12M6500 PRELIMINARY Die size: 13.6 x 13.6 mm Doc. No. 5SYA1666-00 Mrz.05 • • • • Fast and soft reverse recovery Low losses Large SOA Passivation: SIPOS and Silicon Nitride plus Polyimide Maximum rated values	Original	12M6500 5SYA1666-00 CH-5600 5SMX12M6500	PDF
IGBT 6500 V Abstract: No abstract text available Text: VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6500 Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-02 July 07 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide	Original	12M6500 5SYA1627-02 CH-5600 IGBT 6500 V	PDF
5SMX 12M6500 Abstract: 5SMX Text: VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6500 PRELIMINARY Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-00 Mrz.05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide	Original	12M6500 5SYA1627-00 CH-5600 5SMX 12M6500 5SMX	PDF
12M6500 Abstract: No abstract text available Text: Key Parameters VDSM = 6500 ITAVM = 1200 ITRMS = 1880 ITSM = 22000 VT0 = 1.20 rT = 0.600 V A A A V mΩ Phase Control Thyristor 5STP 12M6500 Doc. No. 5SYA 1004-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses	Original	12M6500 12M6500 12M6200 12M5800 67xVDRM CH-5600	PDF
IGBT abb Abstract: 12M6500 5SMX 12M6500 5SLX12M6500 5SMX12M6500 Text: VCE IC = = 6500 V 25 A IGBT-Die 5SMX 12M6500 PRELIMINARY Die size: 13.6 x 13.6 mm Doc. No. 5SYA1627-01 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: SIPOS and Silicon Nitride plus Polyimide	Original	12M6500 5SYA1627-01 CH-5600 IGBT abb 12M6500 5SMX 12M6500 5SLX12M6500 5SMX12M6500	PDF
abb traction motor Abstract: diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12 Text: IGBT and Diode dies ABB Semiconductors ABB IGBT and Diode dies from stateof-the-art SPT planar technology platform. Fig.1 Un-sawn wafer, sawn wafer die on frame and pick-and-place dies in waffle-packs ABB Semiconductor has a well established reputation in the	Original	CH-5600 1768/138a 29palms abb traction motor diode 6.5 kv 5SMY 12M4500 76E-12 IGBT 6500 V 86M1280 5SMY86J1280 ABB IGBT 76J1280 76M12	PDF