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    12N50 Search Results

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    12N50 Price and Stock

    TTM Technologies C12N50Z4

    SMD TERM 12W 50 OHM 6GHZ 1206
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    DigiKey C12N50Z4 Cut Tape 2,443 1
    • 1 $4
    • 10 $3.046
    • 100 $2.4065
    • 1000 $2.0997
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    C12N50Z4 Digi-Reel 2,443 1
    • 1 $4
    • 10 $3.046
    • 100 $2.4065
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    C12N50Z4 Reel 2,000 1,000
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    • 1000 $1.99484
    • 10000 $1.80128
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    Mouser Electronics C12N50Z4 1,190
    • 1 $3.76
    • 10 $3.05
    • 100 $2.4
    • 1000 $1.79
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    Richardson RFPD C12N50Z4 1
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    C12N50Z4 1,000
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    Cal-Chip Electronics CHV1812N500102JCT

    HVCAP1812 COG 1000PF 5% 500V
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    DigiKey CHV1812N500102JCT Reel 1,000 1,000
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    CHV1812N500102JCT Digi-Reel 1,000 1
    • 1 $1.82
    • 10 $1.156
    • 100 $0.8072
    • 1000 $0.66578
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    CHV1812N500102JCT Cut Tape 1,000 1
    • 1 $1.82
    • 10 $1.156
    • 100 $0.8072
    • 1000 $0.66578
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    Cal-Chip Electronics CHV1812N500391JCT

    HVCAP1812 COG 390PF 5% 500V
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    DigiKey CHV1812N500391JCT Reel 1,000 1,000
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    CHV1812N500391JCT Cut Tape 1,000 1
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    • 10 $1.69
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    CHV1812N500391JCT Digi-Reel 1,000 1
    • 1 $2.6
    • 10 $1.69
    • 100 $1.2066
    • 1000 $1.01052
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    Cal-Chip Electronics CHV1812N500472JCT

    HVCAP1812 COG 4700PF 5% 500V
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    DigiKey CHV1812N500472JCT Reel 1,000 1,000
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    CHV1812N500472JCT Digi-Reel 1,000 1
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    • 10 $0.869
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    CHV1812N500472JCT Cut Tape 1,000 1
    • 1 $1.39
    • 10 $0.869
    • 100 $0.597
    • 1000 $0.48666
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    Cal-Chip Electronics CHV1812N500331JCT

    HVCAP1812 COG 330PF 5% 500V
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    DigiKey CHV1812N500331JCT Reel 1,000 1,000
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    CHV1812N500331JCT Digi-Reel 1,000 1
    • 1 $1.17
    • 10 $0.728
    • 100 $0.4951
    • 1000 $0.40058
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    CHV1812N500331JCT Cut Tape 1,000 1
    • 1 $1.17
    • 10 $0.728
    • 100 $0.4951
    • 1000 $0.40058
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    12N50 Datasheets (24)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    12N-50 Inmet ATTENUATOR Scan PDF
    12N50 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N50C1 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N50C1D Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N50E1 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N50E1D Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    12N-50F Inmet ATTENUATOR Scan PDF
    12N-50M Inmet ATTENUATOR Scan PDF
    12N50W-03 Inmet ATTENUATOR UP to 18 GHz 50 Watts Scan PDF
    12N50W-03F Inmet ATTENUATOR UP to 18 GHz 50 Watts Scan PDF
    12N50W-03M Inmet ATTENUATOR UP to 18 GHz 50 Watts Scan PDF
    12N50W-06 Inmet ATTENUATOR UP to 18 GHz 50 Watts Scan PDF
    12N50W-06F Inmet ATTENUATOR UP to 18 GHz 50 Watts Scan PDF
    12N50W-06M Inmet ATTENUATOR UP to 18 GHz 50 Watts Scan PDF
    12N50W-10 Inmet ATTENUATOR UP to 18 GHz 50 Watts Scan PDF
    12N50W-10F Inmet ATTENUATOR UP to 18 GHz 50 Watts Scan PDF
    12N50W-20 Inmet ATTENUATOR UP to 18 GHz 50 Watts Scan PDF
    12N50W-20F Inmet ATTENUATOR UP to 18 GHz 50 Watts Scan PDF
    12N50W-30 Inmet ATTENUATOR UP to 18 GHz 50 Watts Scan PDF
    12N50W-30F Inmet ATTENUATOR UP to 18 GHz 50 Watts Scan PDF

    12N50 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FNDM 12N5001/S35A Diffuse sensors with foreground suppression dimension drawing * 24,3 3,2 25 35 Pot LED 2 13 2,9 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type foreground suppression light source pulsed red LED


    Original
    12N5001/S35A PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDM 12N5001/S35A Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 25 35 2,9 2 13 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type background suppression light source pulsed red LED


    Original
    12N5001/S35A PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N50 Power MOSFET 12A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum


    Original
    12N50 12N50 QW-R502-528 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTA 12N50P IXTP 12N50P VDSS ID25 = 500 = 12 ≤ 0.5 RDS on V A Ω N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25


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    12N50P 12N50P O-263 O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FNDM 12N5001/S35A Diffuse sensors with foreground suppression dimension drawing * 24,3 3,2 25 35 Pot LED 2 13 2,9 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type foreground suppression light source pulsed red LED


    Original
    12N5001/S35A PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDM 12N5001/S35A Diffuse sensors with background suppression dimension drawing * 24,3 3,2 25 35 Pot LED 2 13 2,9 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type background suppression light source pulsed red LED


    Original
    12N5001/S35A PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDM 12N5001/S35A Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 25 35 2,9 2 13 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type background suppression light source pulsed red LED


    Original
    12N5001/S35A PDF

    12n50

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N50 Power MOSFET 12A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original
    12N50 12N50 QW-R502-528 PDF

    IXTP12N50PM

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarHVTM Power MOSFET IXTP 12N50PM VDSS ID25 RDS on (Electrically Isolated Tab) = 500 = 6 ≤ 0.5 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C


    Original
    12N50PM O-220 405B2 IXTP12N50PM PDF

    12N50P

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTA 12N50P IXTI 12N50P IXTP 12N50P = 500 = 12 ≤ 0.5 VDSS ID25 RDS on V A Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500


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    12N50P 12N50P O-263 O-263 O-220 O-220) PDF

    MOSFET IXYS TO-263

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 12N50P IXTP 12N50P VDSS ID25 RDS on = 500 V = 12 A Ω = 500 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original
    12N50P 12N50P O-220 O-263 405B2 MOSFET IXYS TO-263 PDF

    12N50P

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFA 12N50P IXFP 12N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V


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    12N50P 12N50P PDF

    12n50

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDM 12N5001 Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 35 2,9 25 2 3,2 9,2 20 2,9 35 12,4 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw


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    12N5001 12n50 PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FNDM 12N5001/S35A Diffuse sensors with foreground suppression dimension drawing * 24,3 3,2 25 35 Pot LED 2 13 2,9 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type foreground suppression light source pulsed red LED


    Original
    12N5001/S35A PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDM 12N5001 Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 35 2,9 25 2 3,2 9,2 20 2,9 35 12,4 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw


    Original
    12N5001 PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDM 12N5001 Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 35 2,9 25 2 3,2 9,2 20 2,9 35 12,4 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw


    Original
    12N5001 PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDM 12N5001/S35A Diffuse sensors with background suppression dimension drawing * 24,3 3,2 25 35 Pot LED 2 13 2,9 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type background suppression light source pulsed red LED


    Original
    12N5001/S35A PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDM 12N5001 Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 35 2,9 25 2 3,2 9,2 20 2,9 35 12,4 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw


    Original
    12N5001 PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDM 12N5001/S35A Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 25 35 2,9 2 13 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type background suppression light source pulsed red LED


    Original
    12N5001/S35A PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N50 Preliminary Power MOSFET 12A, 500V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state


    Original
    12N50 12N50 QW-R502-528 PDF

    12n50

    Abstract: No abstract text available
    Text: IXFA 12N50P IXFP 12N50P Advance Technical Information PolarHVTM Power MOSFET IXFA 12N50P IXFP 12N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Maximum Ratings = 500 = 12 ≤ 0.5 ≤ 200 Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


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    12N50P O-220 12n50 PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FHDM 12N5001 Diffuse sensors with background suppression dimension drawing * 24,3 Pot LED 3,2 35 2,9 25 2 3,2 9,2 20 2,9 35 12,4 * emitter axis general data photo type background suppression light source pulsed red LED sensing distance Tw


    Original
    12N5001 PDF

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FNDM 12N5001/S35A SmartReflect Light barriers dimension drawing * 24,3 Pot LED 3,2 25 35 2,9 2 13 3,2 9,2 20 2,9 35 12,4 M8 x 1 * emitter axis general data photo type light barrier light source pulsed red LED background position Sde 20 . 80 mm


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    12N5001/S35A PDF

    2N508B

    Abstract: 2N5088 national 2N5089 NATIONAL SEMICONDUCTOR 2N5088 2N5089 MMBT5088 MMBT5089 T092 LS5911
    Text: 2N5088 / MMBT5088 12N50891 MMBT5089 & D iscrete P O W ER & S ig n a l Techno logies National S e m i c o n d u c t o r " MMBT5088 MMBT5089 2N5088 2N5089 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1pA to 50 mA.


    OCR Scan
    2N5088 2N5089 MMBT5088 MMBT5089 2N5089 b5D1130 2N508B 2N5088 national 2N5089 NATIONAL SEMICONDUCTOR MMBT5089 T092 LS5911 PDF