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Infineon Technologies AG IPD12CNE8N-G MOSFET N-CH 85V 67A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD12CNE8N-G	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.59912	Buy Now
Infineon Technologies AG IPB12CNE8N-G MOSFET N-CH 85V 67A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPB12CNE8N-G	Reel			1,000	1 - 10 - 100 - 1000 $0.84513 10000 $0.74738	Buy Now
Infineon Technologies AG IPP12CNE8N-G MOSFET N-CH 85V 67A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPP12CNE8N-G	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

12CNE8N Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: OptiMOS 2 Power-Transistor 12CNE8N G 12CNE8N G 12CNE8N G 12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N PG-TO263-3 PG-TO252-3	PDF
Untitled Abstract: No abstract text available Text: OptiMOS 2 Power-Transistor 12CNE8N G 12CNE8N G 12CNE8N G 12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N PG-TO263-3 12CNE8N	PDF
infineon marking TO-252 Abstract: IEC61249-2-21 IPD12CNE8N IPP12CNE8N PG-TO220-3 12CNE8N Text: OptiMOS 2 Power-Transistor 12CNE8N G 12CNE8N G 12CNE8N G 12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N IEC61249-2-21 PG-TO263-3 infineon marking TO-252 IEC61249-2-21 PG-TO220-3 12CNE8N	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819	PDF
12CNE8N Abstract: IPD12CNE8N IPP12CNE8N PG-TO220-3 DIODE 809 marking IPD12CNE8NG marking ff Text: OptiMOS 2 Power-Transistor 12CNE8N G 12CNE8N G 12CNE8N G 12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N IPB12CN10N PG-TO263-3 PG-TO252-3 12CNE8N PG-TO220-3 DIODE 809 marking IPD12CNE8NG marking ff	PDF
12CNE8N Abstract: IPD12CNE8N IPP12CNE8N PG-TO220-3 12CNE8 DS68 Text: OptiMOS 2 Power-Transistor 12CNE8N G 12CNE8N G 12CNE8N G 12CNE8N G Product Summary Features V DS • N-channel, normal level 85 R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) V 12.4 ID mΩ 67 A • Very low on-resistance R DS(on)	Original	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N PG-TO263-3 PG-TO252-3 12CNE8N PG-TO220-3 12CNE8 DS68	PDF
PG-TO220-3 Abstract: IPD12CNE8N IPP12CNE8N Text: OptiMOS 2 Power-Transistor 12CNE8N G 12CNE8N G 12CNE8N G 12CNE8N G Product Summary Features V DS • N-channel, normal level R DS on ,max (TO252) • Excellent gate charge x R DS(on) product (FOM) 85 V 12.4 ID m: 67 A • Very low on-resistance R DS(on)	Original	IPB12CNE8N IPI12CNE8N IPD12CNE8N IPP12CNE8N PG-TO263-3 PG-TO252-3 PG-TO220-3	PDF