Transistor D 798
Abstract: Transistor D 799 NL8060AC31-12G D 799 7991d VH 799 121LHS10L NL8060AC31-12 "LCD timing controller" BHR-03VS-1
Text: PRELIMINARY DATA SHEET TFT COLOR LCD MODULE NL8060AC31-12G 31 cm 12.1 type , 800 ´ 600 pixels, 262144 colors, incorporated two lamps/edge-light type backlight DESCRIPTION NL8060AC31-12G is a TFT (thin film transistor) active matrix color liquid crystal display (LCD) module comprising
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NL8060AC31-12G
NL8060AC31-12G
NL8060AC31-12.
Transistor D 798
Transistor D 799
D 799
7991d
VH 799
121LHS10L
NL8060AC31-12
"LCD timing controller"
BHR-03VS-1
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NE24483
Abstract: AF367 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119
Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Po Manufacturer Max W V(BR)CBO (V) fose Max (Hz) Gp Po N.F. (dB) (W) (dB) at fTeat (Hz) Ie Max (A) TOpe, Mati. Max (OC) Package Style UHF/Microwav Transistors, Bipolar NPN (Co nt' d) S01543 ThmsnCSFEFC
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S01543
AF367
AF280S
2N2999
2N2415
2N2416
2SA1245
BFQ24
NE59333
BFQ52
NE24483
NE38883
BFT93R
NE13783,
ATF-10135
BFT92R
BF936
CFX21
to119
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MSC2712
Abstract: 12g transistor
Text: MSC2712GT1 General Purpose Amplifier Transistor NPN Surface Mount • Moisture Sensitivity Level: 1 • ESD Rating: TBD http://onsemi.com MAXIMUM RATINGS TA = 25°C COLLECTOR 3 Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 60 Vdc Collector–Emitter Voltage
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MSC2712GT1
MSC2712GT1/D
MSC2712
12g transistor
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Untitled
Abstract: No abstract text available
Text: P35-1310-1 Transistors N-Channel Dual-Gate UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V) I(D) Max. (A) P(D) Max. (W)500m Maximum Operating Temp (øC)150 I(DSS) Min. (A)40m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition)5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.
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P35-1310-1
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Untitled
Abstract: No abstract text available
Text: AT8060 Transistors N-Channel UHF/Microwave JFET V BR DSS (V)5 V(BR)GSS (V)-4 I(D) Max. (A)50m P(D) Max. (W)200m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)50m I(DSS) Max. (A) @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.30mÂ
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AT8060
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Untitled
Abstract: No abstract text available
Text: SGF11 Transistors N-Channel UHF/Microwave MESFET Array V BR DSS (V)6 V(BR)GSS (V)5 I(D) Max. (A)70m P(D) Max. (W)130m I(DSS) Min. (A)20m I(DSS) Max. (A)70m @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct. g(fs) Max; (S) Trans. conduct;
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SGF11
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Untitled
Abstract: No abstract text available
Text: MGF2148G Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-9 I(D) Max. (A)1.6 P(D) Max. (W)8.0 Maximum Operating Temp (øC)150õ I(DSS) Min. (A)900m I(DSS) Max. (A)1.6 @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.360m
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MGF2148G
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Untitled
Abstract: No abstract text available
Text: MGF1902B Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-6.0 I(D) Max. (A)100m P(D) Max. (W)360m Maximum Operating Temp (øC)175 I(DSS) Min. (A)30m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition)3.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.25
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MGF1902B
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Untitled
Abstract: No abstract text available
Text: 2SK1238 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)5 V(BR)GSS (V)-5 I(D) Max. (A)70m P(D) Max. (W)270m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)20m I(DSS) Max. (A)60m @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.35m
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2SK1238
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Untitled
Abstract: No abstract text available
Text: 2SK1237 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)5 V(BR)GSS (V)-5 I(D) Max. (A)70m P(D) Max. (W)270m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)20m I(DSS) Max. (A)80m @V(DS) (V) (Test Condition)3 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.30m
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2SK1237
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Untitled
Abstract: No abstract text available
Text: MGF4316D Transistors N-Channel UHF/Microwave MESFET V BR DSS (V) V(BR)GSS (V)-4.0 I(D) Max. (A)60m P(D) Max. (W)50m Maximum Operating Temp (øC)125 I(DSS) Min. (A)10m I(DSS) Max. (A)60m @V(DS) (V) (Test Condition)2.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.40m
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MGF4316D
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Untitled
Abstract: No abstract text available
Text: 2SK406 Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)5.0 V(BR)GSS (V)6.0 I(D) Max. (A)120m P(D) Max. (W)270m Maximum Operating Temp (øC)175 I(DSS) Min. (A)20m I(DSS) Max. (A)120m @V(DS) (V) (Test Condition)3.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.20m
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2SK406
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Untitled
Abstract: No abstract text available
Text: FHX13X, FHX14X _ GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @ f=12G Hz (FHX13) High Associated Gain: 13.0dB (Typ.)@ f=12G Hz Lg s 0.15|iim, Wg = 200|iim Gold G ate M etallization for High Reliability
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FHX13X,
FHX14X
FHX13)
FHX14X
2-18G
FCSI0598M200
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Untitled
Abstract: No abstract text available
Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @ f=12G Hz High Associated Gain: 10.0dB (Typ.)@ f=12G Hz Lg s 0.25|iim, W g = 280|iim Gold G ate M etallization for High Reliability DESCRIPTION The FHX35X is a High Electron M obility Transistor(H EM T) intended
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FHX35X
FHX35X
2-18G
FCSI0598M200
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FHX35LG
Abstract: FHX35LP low noise hemt fujitsu hemt 1 987 280 103 FHX35
Text: FHX35LG/LP -FEATURES • • • • • Super Low Noise HEMT Low Noise Figure: 1.2B Typ. @ f=12G Hz High A ssociated Gain: 10.0dB (Typ.)@ f=12G Hz Lg s 0.25|iim, W g = 280|iim Gold Gate M etallization for High Reliability
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12GHz
FHX35LG/LP
2-18GHz
FHX35LG/LP
FCSI0598M200
FHX35LG
FHX35LP
low noise hemt
fujitsu hemt
1 987 280 103
FHX35
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Untitled
Abstract: No abstract text available
Text: 2SK2331 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE i < ; \c i * MT • m. MT 31 M T ■ SHF BAND LOW NOISE AM PLIFIER APPLICATIONS • Low Noise Figure : N F = 0.45dB f=12G H z • High Gain U nit in mm : G a = ll d B (f=12G H z)
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2SK2331
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k427 transistor
Abstract: k427 k427 diode BUK427-500B
Text: 7=3 Philips Com ponents Data sheet status Product specification date of issue March 1991 BUK427-500B PowerMOS transistor m 711Q6Hb DQM4145 12G PHILIPS INTERNATIONAL SbE GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic full pack envelope.
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BUK427-500B
DQM4145
PINNING-SOT199
k427 transistor
k427
k427 diode
BUK427-500B
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tl 2n2222
Abstract: 2N2222 2n2222 ti 2N2222 npn small signal current gain 2N2222 circuit output impedance of 2N2222 2N2222, 2N2222A Transistor 2N2222A 2n2222 test circuit Metal 2n2222
Text: N AMER PHILIPS/DISCRETE b'IE D • bbS3T31 OOEÛÜflb 12G I IAPX 2N2222 2N2222A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a T O -18 metal envelope w ith the collector connected to the case. They are primar ily intended for high speed switching. The 2 N 2 2 2 2 is also suitable for d.c. and v.h.f./u.h .f. amplifiers.
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bbS3T31
2N2222
2N2222A
2N2222A
100ms
tl 2n2222
2n2222 ti
2N2222 npn small signal current gain
2N2222 circuit
output impedance of 2N2222
2N2222, 2N2222A
Transistor 2N2222A
2n2222 test circuit
Metal 2n2222
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23G102k
Abstract: 15G121K 15g102k tnr g 180k 12G102K tnr 15g 471k varistor 152k
Text: METAL OXIDE VARISTORS TN R Marcon TNR Metal Oxide Varistors are voltage dependent, symmetrical resistors which perform in a manner similar to back-to-back zener diodes in circuit protective functions and offer advantages in performance and economics. When ex
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MGF4951A
Abstract: Low Noise HEMT 12g transistor
Text: Jan./1999 [ M ITS U B IS H I S E M IC O N D U C T O R Preliminary <G aAs FET> MGF4951A S U P E R LO W N O IS E InGaAs H E M T Leadless Ceramic Package) DESCRIPTION Outline Drawing The M G F4951A super-low-noise HEM T (High Electron Mobility Transistor) is designed for use in C to K band amplifiers.
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MGF4951A
MGF4951A
12GHz
mgf495ia
Low Noise HEMT
12g transistor
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k 2968 toshiba
Abstract: No abstract text available
Text: TOSHIBA 2SK2497 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2 S K2 49 7 SHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure : NF = 1.2dB f=12GHz • High Gain U nit in mm 2.16 ± 0.2 1.1 : Ga = 10dB (f=12GHz)
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2SK2497
12GHz)
--10mA
k 2968 toshiba
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2SK2331
Abstract: No abstract text available
Text: T O S H IB A 2SK2331 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2331 U nit in mm SHF BAND LO W NOISE AM PLIFIER APPLICATIONS • Low Noise Figure : NF = 0.45dB f=12GHz • High Gain 2.16±0.2 : Ga = lld B (f=12GHz)
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2SK2331
12GHz)
Z-167,
12GHz
2SK2331
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LTA 703 S
Abstract: amplifier shf
Text: GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE FIELD EFFECT TRANSISTOR 2SK2331 U nit in mm SHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure : NF = 0.45dB f=12GHz • High Gain : Ga = lld B (f= 12GHz) M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC
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2SK2331
12GHz)
LTA 703 S
amplifier shf
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MGF4714AP
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4714AP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714AP low-noiseHEMT High Electron Mobili ty Transistor is designed for use in X band amplifiers. The plastic mold package offer high cost performance,
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MGF4714AP
MGF4714AP
12GHz
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