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VPG Transducers Y40212K12800T0W FRSM0603 2K1280 TCR0.2 0.01% B W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	Y40212K12800T0W	Bulk			100	1 - 10 - 100 $6.8993 1000 $6.8993 10000 $6.8993	Buy Now
Avnet Americas	Y40212K12800T0W	Waffle Pack			100	1 - 10 - 100 $7.3876 1000 $6.006 10000 $6.006	Buy Now

12K1280 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
76K1280 Abstract: No abstract text available Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values	Original	PDF	12K1280 CH-5600 76K1280
Untitled Abstract: No abstract text available Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values	Original	PDF	12K1280 CH-5600
12K1280 Abstract: No abstract text available Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values	Original	PDF	12K1280 CH-5600 12K1280
Untitled Abstract: No abstract text available Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1280 PRELIMINARY Die size: 11.0 x 11.0 mm Doc. No. 5SYA1308-01 Aug 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide	Original	PDF	12K1280 5SYA1308-01 CH-5600
Untitled Abstract: No abstract text available Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values	Original	PDF	12K1280 CH-5600
Untitled Abstract: No abstract text available Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1280 Die size: 11.0 x 11.0 mm Doc. No. 5SYA1308-03 04 14 •     Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Optimized for high DC-link voltage applications	Original	PDF	12K1280 5SYA1308-03 CH-5600
12K1280 Abstract: No abstract text available Text: VRRM = IF = 1200 V 100 A Diode-Die 5SLY 12G1200 Die size: 8.4 x 8.4 mm Doc. No. 5SYA 1683-01 Dez 12 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1	Original	PDF	12G1200 CH-5600 12K1280
Untitled Abstract: No abstract text available Text: VRRM = IF = 1200 V 100 A Diode-Die 5SLY 12G1200 Die size: 8.4 x 8.4 mm Doc. No. 5SYA 1683-02 04 14 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1	Original	PDF	12G1200 CH-5600