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Catalog Datasheet	MFG & Type	PDF	Document Tags
12M1280 Abstract: 5SMY12M1280 Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No. 5SYA 1322-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values	Original	PDF	12M1280 CH-5600 12M1280 5SMY12M1280
Untitled Abstract: No abstract text available Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No. 5SYA 1322-03 04 14 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values	Original	PDF	12M1280 CH-5600
Polyimide Abstract: 12M1280 Text: VCE IC = = 1200 V 150 A IGBT-Die 5SMY 12M1280 Die size: 13.5 x 13.5 mm Doc. No. 5SYA 1322-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values	Original	PDF	12M1280 60747ut CH-5600 Polyimide 12M1280
Untitled Abstract: No abstract text available Text: VRRM = IF = 1200 V 150 A Diode-Die 5SLY 12J1200 Die size: 10 x 10 mm Doc. No. 5SYA 1684-02 04 14 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter	Original	PDF	12J1200 CH-5600
Untitled Abstract: No abstract text available Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values	Original	PDF	12K1280 CH-5600
Untitled Abstract: No abstract text available Text: VRRM = IF = 1200 V 150 A Diode-Die 5SLY 12J1200 Die size: 10 x 10 mm Doc. No. 5SYA 1684-01 Dez 12 •    Ultra low losses Fast and soft reverse-recovery Highly rugged SPT+ design Passivation: Silicon Nitride plus Polyimide Maximum rated values 1	Original	PDF	12J1200 CH-5600
Untitled Abstract: No abstract text available Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-02 Dez 12 •    Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values	Original	PDF	12K1280 CH-5600