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    12N50P Search Results

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    12N50P Price and Stock

    Littelfuse Inc IXTA12N50P

    MOSFET N-CH 500V 12A TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTA12N50P Tube 307 1
    • 1 $4.2
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    • 1000 $1.824
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    Newark IXTA12N50P Bulk 300
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    • 100 $2.6
    • 1000 $2.09
    • 10000 $1.94
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    Littelfuse Inc IXFA12N50P

    MOSFET N-CH 500V 12A TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFA12N50P Tube 298 300
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    Newark IXFA12N50P Bulk 300
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    • 100 $2.76
    • 1000 $2.22
    • 10000 $2.06
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    RS IXFA12N50P Bulk 8 Weeks 50
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    • 100 $2.99
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    Littelfuse Inc IXFP12N50P

    MOSFET N-CH 500V 12A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFP12N50P Tube 277 1
    • 1 $4.27
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    • 100 $4.27
    • 1000 $1.86112
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    RS IXFP12N50P Bulk 8 Weeks 50
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    • 100 $2.88
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    Littelfuse Inc IXTP12N50P

    MOSFET N-CH 500V 12A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTP12N50P Tube 69 1
    • 1 $2.99
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    • 100 $2.99
    • 1000 $1.175
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    Newark IXTP12N50P Bulk 300
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    Littelfuse Inc IXTP12N50PM

    MOSFET N-CH 500V 6A TO220AB
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    DigiKey IXTP12N50PM Tube 300
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    • 1000 $2.80863
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    Newark IXTP12N50PM Bulk 300
    • 1 -
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    • 100 $4
    • 1000 $3.22
    • 10000 $2.99
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    Ozdisan Elektronik IXTP12N50PM
    • 1 $5.78039
    • 10 $5.78039
    • 100 $5.2549
    • 1000 $5.2549
    • 10000 $5.2549
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    12N50P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTA 12N50P IXTP 12N50P VDSS ID25 = 500 = 12 ≤ 0.5 RDS on V A Ω N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25


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    12N50P 12N50P O-263 O-220 PDF

    IXTP12N50PM

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarHVTM Power MOSFET IXTP 12N50PM VDSS ID25 RDS on (Electrically Isolated Tab) = 500 = 6 ≤ 0.5 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C


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    12N50PM O-220 405B2 IXTP12N50PM PDF

    12N50P

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTA 12N50P IXTI 12N50P IXTP 12N50P = 500 = 12 ≤ 0.5 VDSS ID25 RDS on V A Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 500


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    12N50P 12N50P O-263 O-263 O-220 O-220) PDF

    MOSFET IXYS TO-263

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 12N50P IXTP 12N50P VDSS ID25 RDS on = 500 V = 12 A Ω = 500 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


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    12N50P 12N50P O-220 O-263 405B2 MOSFET IXYS TO-263 PDF

    12N50P

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFA 12N50P IXFP 12N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V


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    12N50P 12N50P PDF

    12n50

    Abstract: No abstract text available
    Text: IXFA 12N50P IXFP 12N50P Advance Technical Information PolarHVTM Power MOSFET IXFA 12N50P IXFP 12N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Maximum Ratings = 500 = 12 ≤ 0.5 ≤ 200 Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C


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    12N50P O-220 12n50 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarHVTM HiPerFET IXFP 12N50PM Power MOSFET VDSS ID25 RDS on trr (Electrically Isolated Tab) = 500 V = 6 A ≤ 0.5 Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


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    12N50PM O-220 405B2 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTA 12N50P IXTP 12N50P VDSS ID25 = 500 = 12 ≤ 0.5 RDS on V A Ω N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 500 500 V


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    12N50P O-220 PDF

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


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    IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


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    MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


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    O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p PDF