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    12N60A Price and Stock

    onsemi HGTG12N60A4

    IGBT 600V 54A 167W TO247
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    Newark HGTG12N60A4 Bulk 300
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    Win Source Electronics HGTG12N60A4 125
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    Rochester Electronics LLC HGTP12N60A4

    UFS SERIES N-CH IGBT
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    DigiKey HGTP12N60A4 Tube 417
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    onsemi HGTP12N60A4

    IGBT 600V 54A 167W TO220AB
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    Win Source Electronics HGTP12N60A4 5,200
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    onsemi HGTP12N60A4D

    IGBT 600V 54A TO220-3
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    Rochester Electronics LLC HGTP12N60A4D

    INSULATED GATE BIPOLAR TRANSISTO
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    DigiKey HGTP12N60A4D Bulk 165
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    Find more 12N60A price and stock on Findchips.com

    12N60A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Low VCE sat IGBT with Diode IXSA 12N60AU1 VCES = 600 V IC25 = 24 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES


    Original     		PDF 12N60AU1

    IGBT 12n60a4D

    Abstract: 12n60a4d 12N60A4D TRANSISTOR TA49371 HGTG12N60A4D TA49335 HGTP12N60A4D HGT1S12N60A4DS HGTG*N60A4D ta49337
    Text: 12N60A4D, 12N60A4D, 12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 12N60A4D, 12N60A4D and 12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		PDF HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS HGTP12N60A4D HGT1S12N60A4DS 150oC. TA49335. TA49371. IGBT 12n60a4D 12n60a4d 12N60A4D TRANSISTOR TA49371 HGTG12N60A4D TA49335 HGTG*N60A4D ta49337

    12n60a4

    Abstract: IGBT 12n60a4 HGT1S12N60A4S HGTG12N60A4 12n60a HGT1S12N60A4S9A C110 HGTP12N60A4 TA49335 TB334
    Text: 12N60A4, 12N60A4, 12N60A4S Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The 12N60A4, 12N60A4 and 12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input


    Original     		PDF HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S HGTG12N60A4 HGT1S12N60A4S 150oC. 100kHz 12n60a4 IGBT 12n60a4 12n60a HGT1S12N60A4S9A C110 HGTP12N60A4 TA49335 TB334

    12n60a

    Abstract: UTC12N60 12N-60a 12N60 12N60B 12N60L 12N60-A 12N60-B
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 12N60 12N60L QW-R502-170 12n60a UTC12N60 12N-60a 12N60B 12N60L 12N60-A 12N60-B

    12n60a4

    Abstract: 12n60a4 pdf datasheet IGBT 12n60a4 HGT1S12N60A4S G12N60A4 HGT1S12N60A4S9A C110 HGTG12N60A4 HGTP12N60A4 TA49335
    Text: 12N60A4, 12N60A4, 12N60A4S Data Sheet November 1999 File Number 600V, SMPS Series N-Channel IGBTs Features The 12N60A4, 12N60A4 and 12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input


    Original     		PDF HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S HGTG12N60A4 HGT1S12N60A4S 150oC. 100kHz 12n60a4 12n60a4 pdf datasheet IGBT 12n60a4 G12N60A4 HGT1S12N60A4S9A C110 HGTP12N60A4 TA49335

    12n60a4d

    Abstract: IGBT 12n60a4D 12n60a 12n60a4 TA49371 TA49335 HGT1S12N60A4DS HGTG12N60A4D HGTP12N60A4D TB334
    Text: 12N60A4D, 12N60A4D, 12N60A4DS Data Sheet October 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 12N60A4D, 12N60A4D and 12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		PDF HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS HGTP12N60A4D HGT1S12N60A4DS 150oC. TA49335. TA49371. 12n60a4d IGBT 12n60a4D 12n60a 12n60a4 TA49371 TA49335 HGTG12N60A4D TB334

    12n60a4d

    Abstract: IGBT 12n60a4D 12n60a4 12N60A4D TRANSISTOR TA49371 12n60a 12N60 HGT1S12N60A4DS HGT1S12N60A4DS9A
    Text: 12N60A4D, 12N60A4D, 12N60A4DS Data Sheet November 1999 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 12N60A4D, 12N60A4D and 12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		PDF HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS HGTP12N60A4D HGT1S12N60A4DS 150oC. TA49335. TA49371. 12n60a4d IGBT 12n60a4D 12n60a4 12N60A4D TRANSISTOR TA49371 12n60a 12N60 HGT1S12N60A4DS9A

    12n60 dc

    Abstract: 12n60
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 12N60 12N60L 12N60G QW-R502-170 12n60 dc

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    12N60A4D

    Abstract: IGBT 12n60a4D g12n60a4d 12n60a4 TA49371 HGTP12N60A4D TA49335 HGT1S12N60A4DS HGT1S12N60A4DS9A HGTG12N60A4D
    Text: 12N60A4D, 12N60A4D, 12N60A4DS Data Sheet November 1999 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 12N60A4D, 12N60A4D and 12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		PDF HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS HGTP12N60A4D HGT1S12N60A4DS 150oC. TA49335. TA49371. 12N60A4D IGBT 12n60a4D g12n60a4d 12n60a4 TA49371 TA49335 HGT1S12N60A4DS9A HGTG12N60A4D

    8N65

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices


    Original     		PDF IC-PPCN-110605 Jun-29-2011 QR-0205-02 8N65

    12N60A4

    Abstract: IGBT 12n60a4 C110 HGT1S12N60A4S HGT1S12N60A4S9A HGTG12N60A4 HGTP12N60A4 TA49335 TB334 HGTG12N60A4 equivalent
    Text: 12N60A4, 12N60A4, 12N60A4S Data Sheet August 2002 600V, SMPS Series N-Channel IGBTs Features The 12N60A4, 12N60A4 and 12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input


    Original     		PDF HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S HGTG12N60A4 HGT1S12N60A4S 150oC. 100kHz 12N60A4 IGBT 12n60a4 C110 HGT1S12N60A4S9A HGTP12N60A4 TA49335 TB334 HGTG12N60A4 equivalent

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    12n60a

    Abstract: 12N60 12N60L 12n60 dc 12n60b 12A 650V MOSFET 12N-60a power mosfet 200A 12N60L-x-TF3-T 12N60G
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 12N60 12N60L 12N60G QW-R502-170 12n60a 12N60L 12n60 dc 12n60b 12A 650V MOSFET 12N-60a power mosfet 200A 12N60L-x-TF3-T 12N60G

    12n60a4

    Abstract: IGBT 12n60a4 12n60a HGTG12N60A4 12n60a4 pdf datasheet g12n60a4 HGT1S12N60A4S9A C110 HGT1S12N60A4S HGTP12N60A4
    Text: 12N60A4, 12N60A4, 12N60A4S Data Sheet May 1999 File Number 600V, SMPS Series N-Channel IGBT Features The 12N60A4, 12N60A4 and 12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input


    Original     		PDF HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S HGTG12N60A4 HGT1S12N60A4S 150oC. 100kHz 12n60a4 IGBT 12n60a4 12n60a 12n60a4 pdf datasheet g12n60a4 HGT1S12N60A4S9A C110 HGTP12N60A4

    12N60A4D TRANSISTOR

    Abstract: No abstract text available
    Text: 12N60A4D, 12N60A4D, 12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 12N60A4D, 12N60A4D and 12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    Original     		PDF HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS HGTP12N60A4D HGT1S12N60A4DS 150oC. TA49335. TA49371. 12N60A4D TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: n ix Y S L o w V ^ IG B T with Diode IXSA 12N60AU1 VCES IC25 VCE sat 600 V 24 A 2.5 V Short Circuit SOA Capability Preliminary data sheet Symbol Test Conditions TO-263AA Tj =25°Cto150°C 600 V VC0R Tj =25°C to150°C ;R GE=1 MQ 600 V VGES Continuous ±20


    OCR Scan     		PDF 12N60AU1 Cto150 to150 O-263AA

    Untitled

    Abstract: No abstract text available
    Text: Advanced Data Low VCE sat| IGBT with Diode IXSA 12N60AU1 VCES I v C25 CE(sat 600 V 12 A 2.5 V Short Circuit SO A Capability Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 Maximum Ratings vt c g r T, = 25°C to 150°C; RQE = 1 MS2 600 V v Continuous


    OCR Scan     		PDF 12N60AU1 O-263AA

    RGE 17-18

    Abstract: 12n60a IXSA12N60AU1 GE 100 v .018 12N60
    Text: □ IXYS L o w V c e „ „ 'S E IXSA 12N60AU1 T with Diode VCES IC25 VCE sat 600 V 24 A 2.5 V Short C ircuit S O A C apability Preliminary data sheet Maximum Ratings Symbol Test C onditions VCES Td = 25°C to 150°C 600 V VCGR Td = 25°C to 150°C; RGE = 1 M£i


    OCR Scan     		PDF IXSA12N60AU1 RGE 17-18 12n60a GE 100 v .018 12N60

    B1116

    Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
    Text: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40


    OCR Scan     		PDF O-220 O-263 O-247 O-2680XST) 16N60 24N60 30N60 40N60 25N100 B1116 b1104 N60A B1118 10N120 B1102 B1126 35N120U1

    12n60a4

    Abstract: IGBT 12n60a4 TP12N60A4 12n60a T1S12N60A4S 12N60 transistor BT 139 F applications note HGTG12N60A4
    Text: 12N60A4, 12N60A4, HG 12N60A4S Data Sheet May 1999 File Number 600V, SM PS S e rie s N -C h a n n e l IG B T F e a tu re s The 12N60A4, 12N60A4 and 12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and


    OCR Scan     		PDF TP12N60A4, 12N60A4, T1S12N60A4S HGTP12N60A4, HGTG12N60A4 HGT1S12N60A4S TA49335. O-220AB 12n60a4 IGBT 12n60a4 TP12N60A4 12n60a 12N60 transistor BT 139 F applications note

    12n60a4

    Abstract: IGBT 12n60a4 12n60a TA49335 hgtg12n60a4 SS LSE 0530 T1S12N60A4S
    Text: 12N60A4, 12N60A4, HG 12N60A4S D ata S h eet M ay 1999 F ile N u m b er 600V, SMPS Series N-Channel IGBT Features The 12N60A4, 12N60A4 and 12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and


    OCR Scan     		PDF HGTP12N60A4, HGTG12N60A4, T1S12N60A4S HGTG12N60A4 HGT1S12N60A4S TA49335. O-220AB 12n60a4 IGBT 12n60a4 12n60a TA49335 SS LSE 0530 T1S12N60A4S

    BTS 3900 a

    Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1
    Text: Insulated Gate Bipolar Transistors IGBT The IGBT is a com bination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of M OSFETs. A dvantages to the user: • rugged, short-circuit-proof device


    OCR Scan     		PDF T-227B BTS 3900 a BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1

    IGBT 12n60a4D

    Abstract: No abstract text available
    Text: 12N60A4D, 12N60A4D, 12N60A4DS Semiconductor F eb ru ary 1999 D ata S h eet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 12N60A4D, 12N60A4D and 12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and


    OCR Scan     		PDF HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS HGTP12N60A4D HGT1S12N60A4DS TA49335. TA49371. 1-800-4-HARRIS IGBT 12n60a4D