SUM60N04-05LT
Abstract: No abstract text available
Text: SUM60N04-05LT New Product Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (W) ID (A) 0.0045 @ VGS = 10 V 60a 0.0065 @ VGS = 4.5 V 20a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode
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SUM60N04-05LT
S-05061--Rev.
12-Nov-01
SUM60N04-05LT
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Untitled
Abstract: No abstract text available
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 2 3 1 20 REVISIONS ALL RIGHTS RESERVED. BY - P LTR DESCRIPTION B2 DATE REVISED PER ECR-12-009561 DWN APVD AY 12AUG13 SZ D D 7.85 7.85 7.85 2 PLC C C 7.85 2 PLC 1.25 2 PLC 1.25 2 PLC 24.51
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ECR-12-009561
12AUG13
12NOV01
25JAN02
UL94VO.
15/30/45A
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Untitled
Abstract: No abstract text available
Text: SUM110N04-03 New Product Vishay Siliconix N-Channel 40-V D-S 200_C MOSFET FEATURES D TrenchFETr Power MOSFET D 200_C Junction Temperature D New Package with Low Thermal Resistance PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.0028 @ VGS = 10 V 110 a
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SUM110N04-03
O-263
S-05029â
12-Nov-01
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SUM60N04-06T
Abstract: No abstract text available
Text: SUM60N04-06T New Product Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.0055 @ VGS = 10 V 60a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature
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SUM60N04-06T
S-05062--Rev.
12-Nov-01
SUM60N04-06T
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Untitled
Abstract: No abstract text available
Text: SUY50N03-07AP New Product Vishay Siliconix N-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A)a, b 0.007 @ VGS = 10 V 25 0.010 @ VGS = 4.5 V 18 D TO-251 G Notes: 1. Drain Connected to Tab G D S 2. Leads Trimmed to 0.092” " 0.003”
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SUY50N03-07AP
O-251
S-05114â
12-Nov-01
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DIODE TP S3L 70
Abstract: diode S3L 49 diode S3L 39 DIN 908 DIODE s3l A115A BYT41D T6819 T6819-TBQ T6829
Text: Features • • • • • • • • • • • • • • Supply voltage up to 40 V RDSon typ. 0.5 Ω @ 25°C, max. 1Ω @ 150°C Up to 1.5 A output current Three high-side and three low-side drivers usable as single outputs or half bridges Capable to switch all kinds of loads such as DC motors, bulbs, resistors, capacitors
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12-Nov-01
DIODE TP S3L 70
diode S3L 49
diode S3L 39
DIN 908
DIODE s3l
A115A
BYT41D
T6819
T6819-TBQ
T6829
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Untitled
Abstract: No abstract text available
Text: SUM60N04-06T New Product Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.0055 @ VGS = 10 V 60a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode D 175_C Junction Temperature
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SUM60N04-06T
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si7840DP New Product Vishay Siliconix N-Channel 30-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0095 @ VGS = 10 V 18 0.014 @ VGS = 4.5 V 15 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile
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Si7840DP
07-mm
S-05084--Rev.
12-Nov-01
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SUM60P05-11LT
Abstract: SUM60P05
Text: SUM60P05-11LT Vishay Siliconix P-Channel 55-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) –55 rDS(on) (W) ID (A) 0.011 @ VGS = –10 V –60a 0.0175 @ VGS = –4.5 V –60a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode
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SUM60P05-11LT
S-05060--Rev.
12-Nov-01
SUM60P05-11LT
SUM60P05
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tab316
Abstract: LS3 104 capacitor A115-A BYT41D SSO20 T6817 T6817-TKQ T6817-TKS U5021M HS38
Text: Features • Three high-side and three low-side drivers • Outputs freely configurable as switch, half bridge or H-bridge • Capable to switch all kinds of loads such as DC motors, bulbs, resistors, capacitors • • • • • • • • • • •
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12-Nov-01
tab316
LS3 104 capacitor
A115-A
BYT41D
SSO20
T6817
T6817-TKQ
T6817-TKS
U5021M
HS38
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T2D21
Abstract: SUM60P05
Text: SUM60P05-11LT Vishay Siliconix P-Channel 55-V D-S MOSFET with Sensing Diode FEATURES PRODUCT SUMMARY V(BR)DSS (V) –55 rDS(on) (W) ID (A) 0.011 @ VGS = –10 V –60a 0.0175 @ VGS = –4.5 V –60a D TrenchFETr Power MOSFETS Plus Temperature Sensing Diode
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SUM60P05-11LT
08-Apr-05
T2D21
SUM60P05
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SI4860DY
Abstract: No abstract text available
Text: Si4860DY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES D TrenchFETr Power MOSFETS D PWM Optimized for High Efficiency PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.008 @ VGS = 10 V 16 0.011 @ VGS = 4.5 V 15 APPLICATIONS
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Si4860DY
S-05083--Rev.
12-Nov-01
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965915-1
Abstract: 963530-1 1241858-2 1241732-2 4-1241730-1
Text: THIS DRAWING IS JfgUBéU ami COPYRIGHT 2000 RELEASED FOR PUBLICATION -E B E L W W f t í W h v ED— BY AMP INCORPORATED. ALLE RECHTE VORBEHALTEN M Í , 2000 . Ï HATED WITH. IPASSEND ZU. LOC REVISIONS DI5T ÄNDERUNGEN AI D LTR DATE DUN APVD NEU DRAWING CREATED
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12-N0V-01
08-JU
03-0CT-05
12-N0V-01
12-NOV-01
I471-9
27JUN96
965915-1
963530-1
1241858-2
1241732-2
4-1241730-1
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