13-AB TRANSISTOR Search Results

13-AB TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

13-AB TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TO -22 AB BUK953R2-40B N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to	Original	BUK953R2-40B	PDF
MJD310 Abstract: mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282 Text: Freescale Semiconductor Technical Data Rev. 13, 12/2004 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282SR1 MRF282ZR1 MJD310 mallory 25 uF capacitor transistor marking z11 transistor marking z9 transistor z9 rm73b2b120jt TRANSISTOR 3052 100B390JCA500X MRF282	PDF
transistor marking z9 Abstract: Arco Variable Capacitors MRF282 Text: Freescale Semiconductor Technical Data MRF282 Rev. 13, 12/2004 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and	Original	MRF282 MRF282SR1 MRF282ZR1 transistor marking z9 Arco Variable Capacitors	PDF
16l soic8 Abstract: qfn16 thermal resistance Text: ECP053 PRELIMINARY DATA SHEET 0.5WATT POWER AMPLIFIER Features Applications 2.4GHz - 2.7GHz 28dBm P1dB High Linearity: 43dBm OIP3 High Efficiency: PAE > 45% 13 dB of Linear Gain Single 5V Supply High Reliablility Class A or AB operation Basestations and Repeaters	Original	ECP053 28dBm 43dBm QFN-16 ECP053 ECP053G ECP053G-500 ECP053G-1000 ECP053D ECP053D-500 16l soic8 qfn16 thermal resistance	PDF
SD2903 Abstract: Dow Corning 140 M229 Text: SD2903  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ ■ ■ ■ GOLD METALLIZATION 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL DESCRIPTION	Original	SD2903 SD2903 Dow Corning 140 M229	PDF
Untitled Abstract: No abstract text available Text: SD2903 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ ■ ■ ■ GOLD METALLIZATION 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL DESCRIPTION	Original	SD2903 SD2903	PDF
SD2903 Abstract: No abstract text available Text: SD2903 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ ■ ■ ■ GOLD METALLIZATION 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL DESCRIPTION	Original	SD2903 SD2903	PDF
variable capacitor Abstract: 10uF 63V Electrolytic Capacitor Arco 423 arco 462 capacitor 2943666661 423 variable capacitor capacitor 10uF arco 463 10uf 63v capacitor 462 variable capacitor Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4280 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 400 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz CLASS A OR AB DESCRIPTION:	Original	MS4280 MS4280 100pF 180pF 100pF, variable capacitor 10uF 63V Electrolytic Capacitor Arco 423 arco 462 capacitor 2943666661 423 variable capacitor capacitor 10uF arco 463 10uf 63v capacitor 462 variable capacitor	PDF
30pf variable capacitor Abstract: VARIABLE capacitor arco 463 capacitor 10uF/63V MS4080 2943666661 arco 10uf 63v capacitor .5PF Electrolytic capacitor 180PF Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS4080 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS Features • • • • • 2 - 400 MHz 15 WATTS 28 VOLTS 13 dB MIN. AT 150 MHz CLASS A OR AB DESCRIPTION:	Original	MS4080 MS4080 180pF 100pF, 100pF 206nH 30pf variable capacitor VARIABLE capacitor arco 463 capacitor 10uF/63V 2943666661 arco 10uf 63v capacitor .5PF Electrolytic capacitor	PDF
SD2903 Abstract: No abstract text available Text: SD2903 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS . . . PRELIMINARY DATA 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB .230 x .360 4L FL M229 ORDER CODE BRANDING SD2903 SD2903 DESCRIPTION The SD2903 is a gold metallized N-channel MOS	Original	SD2903 SD2903	PDF
HF75-12 Abstract: transistors MRF454 MRF454 SD1405 Text: HF75-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF75-12 is Designed for 12.5 Volt Class AB & C HF Power Amplifier Applications in the 2 to 32 MHz Band. FEATURES INCLUDE: • Replacement for MRF454 & SD1405 • PG = 13 dB Min. @ 30MHz & 75W • Withstands 20:1 Load VSWR	Original	HF75-12 HF75-12 MRF454 SD1405 30MHz transistors MRF454 MRF454 SD1405	PDF
DIODE BY 255 Abstract: C67078-S1406-A2 Text: BUZ 255 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 255 200 V 13 A 0.24 Ω TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol	Original	O-220 C67078-S1406-A2 DIODE BY 255 C67078-S1406-A2	PDF
C67078-S1316-A3 Abstract: No abstract text available Text: BUZ 71 A Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 71 A 50 V 13 A 0.12 Ω TO-220 AB C67078-S1316-A3 Maximum Ratings Parameter	Original	O-220 C67078-S1316-A3 C67078-S1316-A3	PDF
C67078-S1326-A3 Abstract: No abstract text available Text: BUZ 71 AL Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 71 AL 50 V 13 A 0.12 Ω TO-220 AB C67078-S1326-A3 Maximum Ratings	Original	O-220 C67078-S1326-A3 C67078-S1326-A3	PDF

IC CD4011B Abstract: CD4011B CD4011BMS CD4012B CD4012BMS CD4023B CD4023BMS Text: CD4011BMS, CD4012BMS CD4023BMS CMOS NAND Gates November 1994 Features Pinouts • High-Voltage Types 20V Rating CD4011BMS TOP VIEW • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V A 1 14 VDD B 2 13 H J = AB 3 12 G K = CD 4 11 M = GH • Buffered Inputs and Outputs	Original	CD4011BMS, CD4012BMS CD4023BMS CD4011BMS 100nA Require200 CD4011BMSH CD4012BMSH CD4023BMSH IC CD4011B CD4011B CD4011BMS CD4012B CD4012BMS CD4023B CD4023BMS	PDF
CD4012B Abstract: CD4011B CD4011BMS CD4012BMS CD4023B CD4023BMS Text: CD4011BMS, CD4012BMS CD4023BMS CMOS NAND Gates November 1994 Features Pinouts • High-Voltage Types 20V Rating CD4011BMS TOP VIEW • Propagation Delay Time = 60ns (typ.) at CL = 50pF, VDD = 10V A 1 14 VDD B 2 13 H J = AB 3 12 G K = CD 4 11 M = GH • Buffered Inputs and Outputs	Original	CD4011BMS, CD4012BMS CD4023BMS CD4011BMS 100nA CD4011BMSH CD4012BMSH CD4023BMSH CD4012B CD4011B CD4011BMS CD4012BMS CD4023B CD4023BMS	PDF
buz7l Abstract: BUZ 140 L DIODE BUZ BUZ71S2 C160 C67078-S1316-A2 C67078-S1316-A3 C67078-S1316-A9 71A50 BUZ71 Siemens Text: SIEMENS SIPMOS Power Transistors BUZ 71 BUZ 71 A, BUZ 71 S2 • N channel • Enhancement mode • Avalanche-rated Type V„ Tc ^DS on Package 1> Ordering Code BUZ 71 50 V 14 A 28 *C 0.10 Q TO-220 AB C67078-S1316-A2 BUZ 71 A 50 V 13 A 25 'C 0.12 Q TO-220 AB	OCR Scan	O-220 C67078-S1316-A2 C67078-S1316-A3 C67078-S1316-A9 71/BUZ SIL03U6 buz7l BUZ 140 L DIODE BUZ BUZ71S2 C160 C67078-S1316-A2 C67078-S1316-A3 C67078-S1316-A9 71A50 BUZ71 Siemens	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BUZ 255 Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 255 Vbs 200 V b 13 A ^bS on 0.24 Q Package Ordering Code TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol Continuous drain current	OCR Scan	O-220 C67078-S1406-A2 fi535bÃ Q064b51	PDF
DIODE BUZ 94 Abstract: No abstract text available Text: SIEMENS BUZ 255 N ot fo r new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 255 Vbs 200 V b 13 A RoSlon 0.24 Q Package Ordering Code TO-220 AB C67078-S1406-A2 Maximum Ratings Parameter Symbol Continuous drain current	OCR Scan	O-220 C67078-S1406-A2 40-------V DIODE BUZ 94	PDF
diode BFT 99 Abstract: ot 306 buz71a Transistor BFT 99 Transistor BFT 44 IR4060 Text: SIEMENS BUZ 71 A N ot fo r new design SiPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 71 A Vbs 50 V b 13 A ^DS on 0.12 ß Package Ordering Code TO-220 AB C67078-S1316-A3 Maximum Ratings Parameter Symbol Values Continuous drain current	OCR Scan	O-220 C67078-S1316-A3 GPT35I55 diode BFT 99 ot 306 buz71a Transistor BFT 99 Transistor BFT 44 IR4060	PDF
Untitled Abstract: No abstract text available Text: SIEMENS BUZ 71 A Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds b f f DS on Package Ordering Code BUZ 71 A 50 V 13 A 0.12 £2 TO-220 AB C67078-S1316-A3 Maxim um Ratings Parameter Symbol Continuous drain current	OCR Scan	O-220 C67078-S1316-A3 GPT05155 0235b05	PDF
sd 431 transistor Abstract: transistor buz 210 Text: SIEMENS BUZ 71 AL N o t fo r n e w rip a ig n SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type BUZ 71 AL Vbs 50 V 13 A flbs on 0.12 ß Package Ordering Code TO-220 AB C67078-S1326-A3 Maximum Ratings Parameter	OCR Scan	O-220 C67078-S1326-A3 GD-05155 sd 431 transistor transistor buz 210	PDF
VPT05381 Abstract: BUZ71 Text: SIEMENS SIPMOS Power Transistors BUZ 71 BUZ 71 A, BUZ 71 S2 • N channel • Enhancement mode • Avalanche-rated S t# VPT05381 Type VDS Id Tc ^DS on Package O rdering Code BUZ 71 50 V 14 A 28 "C 0.10 Q TO-220 AB C67078-S1316-A2 BUZ 71 A 50 V 13 A 25 "C	OCR Scan	VPT05381 O-220 C67078-S1316-A2 C67078-S1316-A3 C67078-S1316-A9 VPT05381 BUZ71	PDF
Untitled Abstract: No abstract text available Text: SGS-THOMSON SD2903 MMMIlLIlMMSiDÊS RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS P R E L IM IN A R Y D A T A 2 - 500 MHz 30 WATTS 28 VOLTS 13 dB MIN. AT 400 MHz CLASS A OR AB DESCRIPTION The SD2903 is a gold metallized N-channel MOS field effect RF power transistor. The SD2903 is	OCR Scan	SD2903 SD2903	PDF

13-AB TRANSISTOR Search Results

13-AB TRANSISTOR Result Highlights (5)

13-AB TRANSISTOR Datasheets Context Search

Untitled

MJD310

transistor marking z9

16l soic8

SD2903

Untitled

SD2903

variable capacitor

30pf variable capacitor

SD2903

HF75-12

DIODE BY 255

C67078-S1316-A3

C67078-S1326-A3

IC CD4011B

CD4012B

buz7l

Untitled

DIODE BUZ 94

diode BFT 99

Untitled

sd 431 transistor

VPT05381

Untitled