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    Glenair Inc 801-007-26Z113-7BA

    Circular MIL Spec Connector CIRC MGHTY MSE (80/60) - CIRCULAR MIGHTY MOUSE
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    Amphenol Corporation 2M80101002ZNU137BA

    Circular MIL Spec Connector M801 7C 7#16 SKT R ECP THRD
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    Amphenol Corporation 2M80100726NF137BA

    Circular MIL Spec Connector M801 7C 7#16 SKT P LUG OM
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    Glenair Inc 801-009-07ZNU13-7BA

    Circular MIL Spec Connector CIRC MGHTY MSE (80/60) - CIRCULAR MIGHTY MOUSE
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    Glenair Inc 801-007-16ZNU13-7BA

    Circular MIL Spec Connector CIRC MGHTY MSE (80/60) - CIRCULAR MIGHTY MOUSE
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    137BA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TRAY FBGA 11X13

    Abstract: S72MS512PE0HF94V MCP NAND sDR S72MS-P BGA 15X15 137-Ball MCP NAND DDR S30MS-P Spansion NAND Flash Spansion NAND Flash DIE
    Text: S72MS-P based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus NAND Interface ORNAND Flash on Bus 1 Mobile SDRAM on Bus 2 Data Sheet Advance Information S72MS-P based MCP/PoP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		S72MS-P TRAY FBGA 11X13 S72MS512PE0HF94V MCP NAND sDR BGA 15X15 137-Ball MCP NAND DDR S30MS-P Spansion NAND Flash Spansion NAND Flash DIE PDF

    K524G2GACB-A050

    Abstract: samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr
    Text: K524G2GACB-A050 MCP MEMORY MCP Specification 4Gb NAND Flash + 2Gb Mobile DDR INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K524G2GACB-A050 A10/AP K524G2GACB-A050 samsung "nand flash" derating K524G2GACB MCP 256M nand samsung mobile DDR nand flash DQS KF94 samsung MCP K5 transistor BA 92 samsung transistor 4gb nand flash SAMSUNG MCp nand ddr PDF

    WS512S

    Abstract: S29WS-S S29WS-P AMAX-16 WS512P WS128P 811-X SA-A11 8x116
    Text: Migrating From S29WS-P to S29WS-R and S29WS-S Application Note By: Jan Gatermann, Keith Luo, Rudy Sterner and James Escamilla 1. Introduction Spansion is always seeking to cost reduce its product line. The 65 nm product families, S29WS-R and S29WS-S, continue that tradition while adding improvements such as higher densities, simplified command


    Original     		S29WS-P S29WS-R S29WS-S S29WS-R S29WS-S, S29WS-S: WS512S S29WS-S AMAX-16 WS512P WS128P 811-X SA-A11 8x116 PDF

    Untitled

    Abstract: No abstract text available
    Text: S72WS-N Based MCPs 1.8 Volt-only Multi-Chip Product MCP x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Bus 2


    Original     		S72WS-N 16-bit PDF

    SAMSUNG MCP

    Abstract: KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm
    Text: Preliminary MCP MEMORY KAA00BB07M-DGUV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash / 64M Bit (4Mx16) Burst UtRAM / 256M Bit (4Mx16x4Banks) Mobile SDRAM Revision History Revision No. History 0.0 Draft Date Initial draft - 256Mb NAND C-Die_Ver 2.6


    Original     		KAA00BB07M-DGUV 16Mx16) 4Mx16) 4Mx16x4Banks) 256Mb 137-Ball 80x14 SAMSUNG MCP KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm PDF

    S29WS256P

    Abstract: S29WS-P S73WS-P
    Text: S73WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Mobile SDRAM on Shared Bus S73WS-P based MCP Products Cover Sheet Data Sheet Advance Information Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		S73WS-P S29WS256P S29WS-P PDF

    512MB NOR FLASH

    Abstract: BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE
    Text: S72WS-N Based MCP/PoP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus 256/512 Mb Simultaneous Read/Write, Burst Mode Flash Memory 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 512/256/128 Mb 8M/4M/2M x 16-bit x 4 Banks Mobile SDRAM on Bus 2


    Original     		S72WS-N 16-bit 512MB NOR FLASH BTA160 BGA 130 MCP NAND DDR S72WS512NFFKFWZ2 Flash MCp nand DRAM 137-ball ball 128 mcp NAND FLASH BGA S29WS256N S72WS256ND0 S72WS256NDE PDF

    F3F3

    Abstract: WS256 bus1
    Text: Design-In Scalable Wireless Solutions with Spansion Products Application Note Introduction This application note provides an overview of the standard package line-up for Spansion wireless Multi-Chip Products MCPs . It is intended to provide customers with a seamless package migration path from one product


    Original     		PDF

    MCP 67 MV- A2

    Abstract: K5D1G13ACD SAMSUNG MCP MCP MEMORY K5D1G K5D1G1 K5D1G13 SAMSUNG MCP Qualification Report 137FBGA k5d1g13a
    Text: Target K5D1G13ACD-D075 MCP MEMORY MCP Specification 1Gb NAND Flash + 512Mb Mobile SDRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K5D1G13ACD-D075 512Mb K5D1G13ACD-D075000 SG2002063-01 MCP 67 MV- A2 K5D1G13ACD SAMSUNG MCP MCP MEMORY K5D1G K5D1G1 K5D1G13 SAMSUNG MCP Qualification Report 137FBGA k5d1g13a PDF

    NAND FLASH DDP

    Abstract: SAMSUNG MCP MCP 256M nand 128M mobile sdram 137FBGA MCP 67 MV- A2 8188 KBE00F005A KBE00F005A-D411 MCP NOR FLASH SDRAM UtRAM Density
    Text: KBE00F005A-D411 MCP MEMORY MCP Specification 512Mb NAND*2 + 256Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		KBE00F005A-D411 512Mb 256Mb 137-Ball 80x14 NAND FLASH DDP SAMSUNG MCP MCP 256M nand 128M mobile sdram 137FBGA MCP 67 MV- A2 8188 KBE00F005A KBE00F005A-D411 MCP NOR FLASH SDRAM UtRAM Density PDF

    MT29C1G24MADLAJA-6

    Abstract: Micron 512MB nand FLASH MT29C2G24MAKLAJA-6 Micron 512MB nand FLASH mcp Flash MCp nand DRAM 137-ball JW190 137-Ball MCP NAND sDR mt29c 1g nand DDR mcp
    Text: Preliminary‡ Micron Confidential and Proprietary 137-Ball NAND Flash with LP-DRAM MCP Features NAND Flash with LP-DRAM 137-Ball Multiple-Chip Package MCP MT29CxGxxMAxxxJA Current Production Part Numbers: Table 1 on page 2 Features Figure 1: • All-Micron NAND Flash and LP-DRAM


    Original     		137-Ball MT29CxGxxMAxxxJA 09005aef82ff4431 09005aef82ff448c 137ball MT29C1G24MADLAJA-6 Micron 512MB nand FLASH MT29C2G24MAKLAJA-6 Micron 512MB nand FLASH mcp Flash MCp nand DRAM 137-ball JW190 MCP NAND sDR mt29c 1g nand DDR mcp PDF

    MT29F2G16AB

    Abstract: MT29C2G24MAKLAJG-6 MT29C4G48 JW256 MT29C2G48MAKLCJI-6 mt29f4g16ab MT29F4G16A MT29F2G16ABDHC mt29c MT29F2G16ABDHC-ET
    Text: Preliminary‡ 168-Ball NAND Flash and LPDRAM PoP TI OMAP MCP Features NAND Flash and Mobile LPDRAM 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29CxGxxMAxxxxx Features Figure 1: PoP Block Diagram Micron NAND Flash and LPDRAM components


    Original     		168-Ball MT29CxGxxMAxxxxx 09005aef83070ff3 168ball MT29F2G16AB MT29C2G24MAKLAJG-6 MT29C4G48 JW256 MT29C2G48MAKLCJI-6 mt29f4g16ab MT29F4G16A MT29F2G16ABDHC mt29c MT29F2G16ABDHC-ET PDF

    Flash MCp nand DRAM 137-ball

    Abstract: DA12A marking PP nand sdram mcp
    Text: S72WS-N Based MCPs 1.8 Volt-only Multi-Chip Product MCP x16 Flash Memory and SDRAM on Split Bus 256/512/768 Mb Simultaneous Read/Write, Burst Mode Flash Memory, 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 256/128 Mb (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Bus 2


    Original     		S72WS-N 16-bit Flash MCp nand DRAM 137-ball DA12A marking PP nand sdram mcp PDF

    qualcomm nand

    Abstract: KBE00500AM-D437 SAMSUNG MCP KBE00500AM NAND FLASH DDP MCP Specification UtRAM Density 2gb nand mcp 137FBGA SAMSUNG 256Mb NAND Flash Qualification Reliability
    Text: Target MCP MEMORY KBE00500AM-D437 MCP Specification 1Gb NAND Flash Memory * 2 + 512Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		KBE00500AM-D437 512Mb KBE00500AM-D437 SG2002063-01 qualcomm nand SAMSUNG MCP KBE00500AM NAND FLASH DDP MCP Specification UtRAM Density 2gb nand mcp 137FBGA SAMSUNG 256Mb NAND Flash Qualification Reliability PDF

    TCMS

    Abstract: S29WS-N S72WS256ND0 S72WS256NDE S72WS256NEE 225 J 250 AVA CL 20 JEP95
    Text: S72WS256N Based MCPs 256/512 Megabit 16M/32M x 16-bit CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Split Bus ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications


    Original     		S72WS256N 16M/32M 16-bit) 16-bit TCMS S29WS-N S72WS256ND0 S72WS256NDE S72WS256NEE 225 J 250 AVA CL 20 JEP95 PDF

    TCMS

    Abstract: TRANSISTOR BFW 11 pin diagram S73WS256N marking code qa1 148
    Text: S73WS256N Based MCPs Stacked Multi-Chip Product MCP 512/256 Megabit (32M/16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Shared Data Bus ADVANCE INFORMATION


    Original     		S73WS256N 32M/16M 16-bit) 16-bit S72WS256N TCMS TRANSISTOR BFW 11 pin diagram marking code qa1 148 PDF

    S73WS256N

    Abstract: WS128N SA173
    Text: S73WS256N based MCPs Stacked Multi-Chip Product MCP 256 Megabit (32M/16M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with 256/128 Megabit (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Shared Address/Data Bus ADVANCE Distinctive Characteristics


    Original     		S73WS256N 32M/16M 16-bit) 16-bit S73WS WS128N SA173 PDF

    SAMSUNG MCP

    Abstract: F407 KBE00D002M-F407 samsung "nor flash" sensing UtRAM Density 137FBGA
    Text: Advance Preliminary MCP MEMORY KBE00D002M-F407 Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash*2 / 128M Bit (2Mx16x4Banks) Mobile SDRAM*2 Revision No. History Draft Date Remark Preliminary 0.0 Initial issue. - 512M NAND DDP C-Die_ ver 1.0


    Original     		KBE00D002M-F407 16Mx16) 2Mx16x4Banks) 128Mb 137-Ball 80x14 SAMSUNG MCP F407 KBE00D002M-F407 samsung "nor flash" sensing UtRAM Density 137FBGA PDF

    N1056

    Abstract: 2g nand mcp bsc nm 1st year S30MS-P 3g hsdpa signal Schematic Diagram S30MS01GP spansion ms nand flash format h.264
    Text: S30MS-P ORNANDTM Flash Family S30MS01GP, S30MS512P 1 Gb/512 Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology Data Sheet Preliminary S30MS-P ORNANDTM Flash Family Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		S30MS-P S30MS01GP, S30MS512P Gb/512 x8/x16, N1056 2g nand mcp bsc nm 1st year 3g hsdpa signal Schematic Diagram S30MS01GP spansion ms nand flash format h.264 PDF

    137-Ball

    Abstract: S30MS-P N1056 MS512P
    Text: S30MS-P ORNANDTMFlash Family S30MS01GP, S30MS512P 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology S30MS-P ORNANDTMFlash Family Cover Sheet Data Sheet Preliminary Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		S30MS-P S30MS01GP, S30MS512P 1Gb/512Mb, x8/x16, 137-Ball N1056 MS512P PDF

    Dba1 battery

    Abstract: Spansion NAND Flash DIE 137-Ball nand flash pcb layout design Flash MCp nand DRAM 137-ball NOR Flash XIP ws512P Satellite A25 NWP date code
    Text: Design-In Scalable Wireless Solutions with Spansion Products Application Note Introduction This application note provides an overview of the standard package line-up for Spansion wireless Multi-Chip Products MCPs . It is intended to provide customers with a seamless package migration path from one product


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: S72WS-R based MCP Products 1.8 Volt-only x16 Flash Memory and SDRAM on Split Bus Simultaneous Read/Write, Burst Mode MirrorBit NOR Flash on Bus 1 Mobile SDRAM on Bus 2 S72WS-R based MCP Products Cover Sheet Data Sheet Advance Information Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		S72WS-R PDF

    numonyx 106 ball

    Abstract: strataflash 512mbit strataflash 512 p33 512mbit numonyx 107-ball 512-Gbit Numonyx StrataFlash M18
    Text: Numonyx StrataFlash Wireless Memory L18/L30 SCSP 512-Mbit LX Family with LPSDRAM (x32) Datasheet Product Features „ „ „ Device Architecture — Flash die density: 128-, 256-Mbit — Top or Bottom flash parameter configuration — 32-bit bus width


    Original     		L18/L30 512-Mbit 256-Mbit 32-bit 16-Mbit x32SH x16SB x16/x32 numonyx 106 ball strataflash 512mbit strataflash 512 p33 512mbit numonyx 107-ball 512-Gbit Numonyx StrataFlash M18 PDF

    DA12A

    Abstract: No abstract text available
    Text: S72WS-N Based MCPs 1.8 Volt-only Multi-Chip Product MCP x16 Flash Memory and SDRAM on Split Bus 256/512/768 Mb Simultaneous Read/Write, Burst Mode Flash Memory, 512 Mb NAND Flash 1024 Mb NAND Interface ORNAND Flash Memory on Bus 1 256/128 Mb (4M/2M x 16-bit x 4 Banks) Mobile SDRAM on Bus 2


    Original     		S72WS-N 16-bit DA12A PDF