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    RF MOSFET

    Abstract: MRF173 MRF173CQ FML C16
    Text: ^s.mi'Con.dacto'i ^P , One, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 The RF MOSFET Line RF Power Field Effect Transistors MRF173 MRF173CQ N-Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz


    Original     		PDF MRF173 MRF173CQ 13dBTyp) 50Vdc 16AWG, VK200-19/4B 1N5925A pC13q RF MOSFET MRF173 MRF173CQ FML C16

    2SC5772

    Abstract: No abstract text available
    Text: <~*£.mi- ,onau.ctoi L/^roaueti, line. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SC5772 Silicon NPN RF Transistor utd^Kir i IUIN ^H^. • High Gain Bandwidth Product S OT- 2 3- 3 L package


    Original     		PDF 2SC5772 13dBTYP, 900MHz 2SC5772

    FSC11LF

    Abstract: FSX52WF FSC10LF FT6022D FSX51WF FT6012D FT6110D FT6046 FT6021D ft6021
    Text: - 140 - :1 f m g FSCIOLF it S ± ii FSCIOX FSC11FA/LG Ä ±ü§ ffl € fr & m ¡s 4 % 1 V* K V * fg "Æ Vg s * X * * (V) 1* (A) % m [ P d /P c h (max) * * m (A) Vg s (V) tt n (Ta=25'C) V g s (c ff) (min) (max) Vd s (V) (V) (V) I ds s (min) (max) V d s


    OCR Scan     		PDF FSC10LF 250ii FSC10X FSC11FA/LG FSC11LF 95nstyp FT6021 FT6021D 160nstyp FSX52WF FT6022D FSX51WF FT6012D FT6110D FT6046 FT6021D ft6021

    2SK653

    Abstract: 2SK652 2SK671 Gv-80dB 2SK674 2SK650 2SK669 150ni 2SK677 2SK649
    Text: - 60 - M £ ft ffl € & flt £ f •ç !• 4 1 H 2S K 6 4 8 m X [H# * * V æ fê ft £ * (V) * P d/Pch I gss (W) (max) (A) Vg s (V) ^ (min) (A) (max) (A) Vd s (V) W fî tt ( T a = 2 5 <C ) (min) (V) (max) V d s (V) (V) (min) (S) Id (A) (typ) V d s


    OCR Scan     		PDF 2SK648 2SK649 2SK650 2SK651 150ni 2SK652 2SK665 50MHz 2SK666 2SK765 2SK653 2SK671 Gv-80dB 2SK674 2SK669 2SK677

    3SK35

    Abstract: 3SK48 3SK51 3SK40 3SK73 3sk74 3SK41 3SK45 3SK78 3SK59
    Text: - 174 - f € sa s tt £ m & ft £ £ ± S fë P d /P c h K T j. 7 H % ft/ V * fr fr (V) (A) * m Ig s s (max) (A) Vg s (V) (min) (A) & tö tt f t (Ta=25<C ) Vpi VP2 (max) V g 2S (max) V g z s (max) (A) (V) (V) (V) (V) (min) (typ) V d s (S) (S) (V) Vg i s


    OCR Scan     		PDF 3SK35 100ll 3SK37 3SK39, 3SK40 3SK61 20dBtyp 200MHz 3KS101 3SK63 3SK35 3SK48 3SK51 3SK73 3sk74 3SK41 3SK45 3SK78 3SK59

    2SK565

    Abstract: 2SK541 2SK566 2SK569 2SK561 2SK564 2SK549 2SK572 2SK538 2SK544
    Text: - 54 - m e tt ÌÈ. £ m & f y * 1 % K ft X £ P d/ Pc h E ft * V MOS N E 900 DSX ±20 2SK539 SW Reg MOS N 900 DSX ±20 IF J ND 12 D S X -15 S ±20 s a 2SK542 NEC i 2SK543 2SK544 2SK545 - f t 2SK546 LN A , t ' f *i*7 SW MOS N E F M Tuner, V H F RF MOS


    OCR Scan     		PDF 2SK538 2SK539 ZSK541 2SK542 2SK543 2SK556 2SK557 2SK559 2SK560 2SK622 2SK565 2SK541 2SK566 2SK569 2SK561 2SK564 2SK549 2SK572 2SK538 2SK544

    chw marking sot23

    Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
    Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu


    OCR Scan     		PDF

    FLR024FH

    Abstract: FLX102MH-12 flx202mh-12 FLS09ME FLS09 FLR016XP FLR014XP FLR014FH FSC10FA FLR056XV
    Text: - 138 - S £ tt € m & i* » f t ; ht * * m £ V P d /P c h 1 * * m K V * (V) (A) * * (W> Ig s s (max) (A) Vg s (V) (min) (A) % (max) V d s (A) (V) ft ¡8 fé (min) (V) (max) V d s (V) (V) (Ta=25°C) (min) (S) Id (A) Vd s (V) Id (A) .2.2 FLM7785-8C/D


    OCR Scan     		PDF FLM7785-8C/D FLM8596-4C FLM8596-8C FLR014FH FLR014XP FLC311MG-4 FLS31ME 36dBm, FLS50 FLR024FH FLX102MH-12 flx202mh-12 FLS09ME FLS09 FLR016XP FLR014FH FSC10FA FLR056XV

    FLL101ME

    Abstract: FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLK202MH-14 PA FLM1011-4C FLK202MH-14 FLM0910-4C
    Text: - 134 - f =£ m % tt % s & m % ±m FLK202MH-14 FLK202XV ıiS FLLIOME ^ 2Ê! fë S P d/P c h % K FIK102XV I K ti !í 13=25*0 t st (V) * ft (A) (V) ft * Ig s s (max) (A) m Vg s (V) (min) (max) Vps (A) (A) (V) (min) (max) Vd s (V) (V) (V) Id (A) (min)


    OCR Scan     		PDF FLK202MH-14 FLK202XV FLL10ME FLL17MB FLL35ME GaLM1011-8D FLM1112-4C FLM1213-4C FLM1213-4D FLM1213-8C FLL101ME FLL100MK FLL171ME FLM1414-4C fll171 FLM0910-8C FLK202MH-14 PA FLM1011-4C FLK202MH-14 FLM0910-4C

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NES1821P-30 30 W L-S BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1821P-30 is a 30 W push-pull type GaAs MESFET designed for high power transmitter applications for PCS, DCS and PHS base station systems. It


    OCR Scan     		PDF NES1821P-30 NES1821P-30

    Untitled

    Abstract: No abstract text available
    Text: Audio ICs High-definition sound processor BA3888S The BA3888S is a sound processor 1C that perform s phase and harm onic com pensation on audio signals to accu­ rately reproduce the “rise” section of audio signals that determ ines the characteristics of the sound, and thus reproduce the original recording as naturally as possible.


    OCR Scan     		PDF BA3888S BA3888S PIN16 PIN17

    Untitled

    Abstract: No abstract text available
    Text: Audio ICs High-definition sound processor BA3888S The BA3888S is a sound processor 1C that performs phase and harmonic compensation on audio signals to accu­ rately reproduce the “rise” section of audio signals that determines the characteristics of the sound, and thus repro­


    OCR Scan     		PDF BA3888S BA3888S PIN16 FIN17