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    Si2304DS

    Abstract: 70901
    Text: SPICE Device Model Si2304DS Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


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    PDF Si2304DS 13-Jul-98 70901

    KD 609

    Abstract: No abstract text available
    Text: 4 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 ,19 LOC ALL RIGHTS RESERVED. REVISIONS DIST FT 4 LTR D B C 1 1 .38[. 448] INTERFACIAL MATING DESCRIPTION DATE RLSE -1 PER NPR 5374, WAS 95-7970-25 REV PER EC 0020-463-96


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    PDF 1C-96-98 09MAV94 13-JUL-98 amp06568 /ssrv026d/dsk04/dept4023/amp06568/edminod KD 609

    M R029

    Abstract: R029
    Text: THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 19 RELEASED FOR PUBLICATION BY AMP INCORPORATED. .19 ALL RIGHTS RESERVED. DIST AA 53 REVISIONS LTR .154 [3.91] .160 [4.06] TYP .069 [1.75] 2 PLCS —•(£) (j) -(j) j? ' BUS □ -s a ­ RECEPTACLE c 1 / S 1 1 /


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    PDF 26JUL99 13JUL98 23FEB95 13JUL98 amp34754 M R029 R029

    Untitled

    Abstract: No abstract text available
    Text: 4 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 ,19 LOC ALL RIGHTS RESERVED. DIST FT R EVISIONS 4 LTR D B C 1 1 .38[. 448] INTERFACIAL MATING DESCRIPTION DATE RLSE -1 PER NPR 5 3 74 , WAS 9 5 - 7 9 7 0 - 2 5 REV PER EC 0 0 2 0 - 4 6 3 - 9 6


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