diode 1500V
Abstract: diode marking H2 mark h2 diode fast recovery diode 1500V diode marking e41 diode 3A 1500V
Text: ERE41-15 3A (1500V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. 25 MIN. Features Damper diode for high definition T.V. and high resolution display Marking High voltage by mesa design Color code : White High reliability Applications
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ERE41-15
diode 1500V
diode marking H2
mark h2 diode
fast recovery diode 1500V
diode marking e41
diode 3A 1500V
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diode marking e41
Abstract: E41-15 diode 3A 1500V 1500V 3A diode
Text: ERE41-15 3A (1500V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. 25 MIN. Features Damper diode for high definition T.V. and high resolution display Marking High voltage by mesa design Color code : White High reliability Applications
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ERE41-15
diode marking e41
E41-15
diode 3A 1500V
1500V 3A diode
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diode marking e41
Abstract: diode 3A 1500V e41.15 ERE41-15 1500V 3A diode
Text: ERE41-15 3A (1500V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. 25 MIN. Features Damper diode for high definition T.V. and high resolution display Marking High voltage by mesa design Color code : White High reliability Applications
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ERE41-15
diode marking e41
diode 3A 1500V
e41.15
ERE41-15
1500V 3A diode
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXTJ6N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 3A 3.85Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings
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IXTJ6N150
O-247TM
E153432
100ms
6N150
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IXTJ6N150
Abstract: No abstract text available
Text: IXTJ6N150 High Voltage Power MOSFET VDSS ID25 = = 1500V 3A 3.85Ω RDS on ≤ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode ISO TO-247TM E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXTJ6N150
O-247TM
E153432
100ms
6N150
IXTJ6N150
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Untitled
Abstract: No abstract text available
Text: TO-220F 3A Thyristor with built-in Avalanche diode TFD312S series • Features External Dimensions Unit: mm ●Gate trigger current: IGT=10mA max 13.0 min ●Isolation voltage: VISO=1500V(50Hz AC, RMS, 1min.) ±0.2 4.2 C 0.5 2.8 ±0.2 φ ±0.2 3.3 A 0.2
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O-220F
TFD312S
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IXTH3N150
Abstract: No abstract text available
Text: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on 1500V 3A 7.3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M
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IXTH3N150
O-247
100ms
3N150
0-26-10-A
IXTH3N150
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IXTH3N150
Abstract: No abstract text available
Text: High Voltage Power MOSFET VDSS ID25 IXTH3N150 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTH3N150
O-247
100ms
3N150
0-26-10-A
IXTH3N150
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IXTH3N150
Abstract: No abstract text available
Text: IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTH3N150
O-247
100ms
3N150
0-26-10-A
IXTH3N150
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IXTH3N150
Abstract: 3N150 T3N1 Vdss 1500V
Text: Advance Technical Information IXTH3N150 High Voltage Power MOSFET VDSS ID25 = = RDS on ≤ 1500V 3A 7.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTH3N150
O-247
100ms
3N150
0-26-10-A
IXTH3N150
T3N1
Vdss 1500V
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Untitled
Abstract: No abstract text available
Text: NTE2679 Silicon NPN Transistor Power, High Voltage w/Built−In Damper Diode TO220F Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D Wide Area of Safe Operation D Built−In Damper Diode Applications: D Horizontal Deflection Output for TV or CRT Monitor
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NTE2679
O220F
100mA,
750mA,
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diode 3A 1500V
Abstract: bu2506dx using of damper in Horizontal Output Transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU2506DX DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 700V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of
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BU2506DX
diode 3A 1500V
bu2506dx
using of damper in Horizontal Output Transistor
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TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2N109
2N1304
2N1305
2N1307
2N1613
2N1711
2N1893
2N2102
2N2148
2N2165
TRANSISTOR DATASHEET D1555
d1555 transistor
TRANSISTOR D1651
D1555
D1557
D1554
d1651
transistor s1854
transistor d1555
transistor d1878
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BUh315d
Abstract: NPN Transistor 1A 400V npn transistors 400V 1A NPN Transistor 1.5A 400V Transistor buh315d
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUH315D DESCRIPTION •High Switching Speed ·High Voltage ·Built-in Integrated Diode APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s and monitors.
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BUH315D
100mA
BUh315d
NPN Transistor 1A 400V
npn transistors 400V 1A
NPN Transistor 1.5A 400V
Transistor buh315d
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2SD1441
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SD1441 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications
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2SD1441
500mA;
2SD1441
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2SD1441
Abstract: No abstract text available
Text: Product Specification www.jmnic.com 2SD1441 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Built-in damper diode ・High voltage ,high reliability ・High speed switching ・Wide area of safe operation APPLICATIONS ・For horizontal deflection output applications
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2SD1441
500mA;
2SD1441
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2SD1846
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SD1846 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High voltage,high speed ·Built-in damper diode ·Wide area of safe operation APPLICATIONS ·Horizontal deflection output applications PINNING
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2SD1846
2SD1846
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2SD1632
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SD1632 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・High voltage ,high speed ・Built-in damper diode ・Wide area of safe operation APPLICATIONS ・For horizontal deflection output applications
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2SD1632
2SD1632
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2SD1729
Abstract: diode 3A 1500V
Text: SavantIC Semiconductor Product Specification 2SD1729 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Built-in damper diode ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications
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2SD1729
2SD1729
diode 3A 1500V
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2SD1729
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SD1729 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·Built-in damper diode ·High voltage ,high speed ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications
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2SD1729
2SD1729
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2SD1554
Abstract: 2sd1554 equivalent TOSHIBA DIODE GLASS MOLD 00l3
Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1554 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. Unit in mm FEATURES: . High Voltage l&5±0t5 >3.6±aS : VCBO=1500V S.0±0l3 . Low Saturation Voltage: VcE sat =5V(Typ.)(Ic=3A,Ib =0.8A) . High Speed : tf = 1. 0|is(Max.) (I(;p=3A, lBl(end)=0.8A)
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2SD1554
200mA,
2SD1554
2sd1554 equivalent
TOSHIBA DIODE GLASS MOLD
00l3
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2SD1426
Abstract: le-200mA
Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1426 _ Unit in mm 1 & 5 ± 0 .5 COLOR TV HORIZONTAL OUTPUT APPLICATIONS. 0 3 .6 ± a z 1.5 FEATURES: . High Voltage : Vcgo=1500V . Low Saturation Voltage : VcE sat =5V(Typ.) (Ic=3A, IB=0.8A) . High Speed : tf=l.0.as (Max. ) (Icp=3A, Ifll(end)=0.8A)
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2SD1426
2S01426
2SD1426
le-200mA
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2SD869 TOSHIBA
Abstract: 2SD869
Text: 2SD869 SILICON NPN TRIPLE DIFFUSED MESA TYPE INDUSTRIAL APPLICATIONS Unit in mm COLOR TV HORIZONTAL OUTPUT APPLICATIONS. 0Z5.OW.X. FEATURES: 021.OUAX • High Voltage : VCBq =1500V • Low Saturation Voltage : VCE sat =5v (TyP-) +0.09 jZL0— 0.03 (Ic=3A, Ib =0.8A)
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2SD869
2SD869 TOSHIBA
2SD869
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2SD904
Abstract: tv ic equivalent TV horizontal ic voltage
Text: SANYO SEMICONDUCTOR 2SD904 NPN Triple Diffused Mesa For Horizontal Deflection With Damper Diode Silicon Transistor of 20" Color TV Absolute Maximum Eatings at Ta=25°C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current
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2SD904
Tc-25Â
-4CWKL50
200mA
100mA
2SD904
tv ic equivalent
TV horizontal ic voltage
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