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    Kyocera AVX Components VC040205X150WP

    VARISTOR 8.5V 20A 0402
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    DigiKey VC040205X150WP Digi-Reel 243,268 1
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    VC040205X150WP Cut Tape 243,268 1
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    VC040205X150WP Reel 240,000 10,000
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    Kyocera AVX Components VC020105T150WP

    VARISTOR 12.8V 2A 0201
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    DigiKey VC020105T150WP Cut Tape 24,806 1
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    VC020105T150WP Digi-Reel 24,806 1
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    VC020105T150WP Reel 20,000 10,000
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    Mouser Electronics VC020105T150WP 19,980
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    TTI VC020105T150WP Reel 10,000
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    Kyocera AVX Components VCAS040205X150WP

    VARISTOR 8.5V 20A 0402
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    DigiKey VCAS040205X150WP Cut Tape 18,463 1
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    VCAS040205X150WP Digi-Reel 18,463 1
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    Mouser Electronics VCAS040205X150WP 12,299
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    Newark VCAS040205X150WP Cut Tape 10
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    TTI VCAS040205X150WP Reel 10,000 10,000
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    Adam Technologies Inc CA-FMFM-ZZ00150WP

    COAX CBL FAKRA TO FAKRA
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    DigiKey CA-FMFM-ZZ00150WP Bag 90 1
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    Mouser Electronics CA-FMFM-ZZ00150WP
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    PUI Audio ASE04508MR-LW150-WP-R

    SPEAKER 8OHM 2W TOP PORT 80DB
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    DigiKey ASE04508MR-LW150-WP-R Tray 64 1
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    Mouser Electronics ASE04508MR-LW150-WP-R 50
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    Newark ASE04508MR-LW150-WP-R Bulk 20 1
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    TME ASE04508MR-LW150-WP-R 36 1
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    Avnet Abacus ASE04508MR-LW150-WP-R 21 Weeks 25
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    Master Electronics ASE04508MR-LW150-WP-R 75
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    Sager ASE04508MR-LW150-WP-R 25
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    150WP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC2510

    Abstract: No abstract text available
    Text: 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm l Specified 28V, 28MHz Characteristics l Output Power : Po = 150WPEP (Min.) l Power Gain : Gp = 12.2dB (Min.)


    Original
    2SC2510 30MHz 28MHz 150WPEP -30dB 001MHz, 000MHz, 001MHz 2SC2510 PDF

    2SC2510

    Abstract: 2SC2510A
    Text: 2SC2510A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm z Specified 28V, 28MHz Characteristics z Output Power : Po = 150WPEP (Min.) z Power Gain : Gp = 12.2dB (Min.)


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    2SC2510A 30MHz 28MHz 150WPEP -30dB 2SC2510 2SC2510A PDF

    2SC2510

    Abstract: 2sc2510 transistor application
    Text: 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm Specified 28V, 28MHz Characteristics Output Power : Po = 150WPEP (Min.) Power Gain : Gp = 12.2dB (Min.)


    Original
    2SC2510 30MHz 28MHz 150WPEP -30dB 001MHz, 000MHz, 001MHz 2SC2510 2sc2510 transistor application PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC2510A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm Specified 28V, 28MHz Characteristics Output Power : Po = 150WPEP (Min.) Power Gain : Gp = 12.2dB (Min.)


    Original
    2SC2510A 30MHz 28MHz 150WPEP -30dB 2-13B1A PDF

    2SC2510A

    Abstract: 2sc2510 transistor application 2SC2510
    Text: 2SC2510A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm z Specified 28V, 28MHz Characteristics z Output Power : Po = 150WPEP (Min.) z Power Gain : Gp = 12.2dB (Min.)


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    2SC2510A 30MHz 28MHz 150WPEP -30dB 2SC2510A 2sc2510 transistor application 2SC2510 PDF

    transformer 0-12v

    Abstract: J101 0-12V 2204B MRF151 VRF151 Transistor C2 Unelco J101
    Text: VRF151 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original
    VRF151 175MHz VRF151 30MHz, 175MHz, MRF151 transformer 0-12v J101 0-12V 2204B MRF151 Transistor C2 Unelco J101 PDF

    VRF141

    Abstract: 28v 30MHZ MRF141 2204B
    Text: VRF141 28V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF141 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original
    VRF141 175MHz VRF141 30MHz, 175MHz, MRF141 28v 30MHZ MRF141 2204B PDF

    blf177

    Abstract: 2204B MRF151 VRF152
    Text: VRF152 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original
    VRF152 175MHz VRF152 30MHz, 175MHz, MRF151/ BLF177/ SD2941 blf177 2204B MRF151 PDF

    MS1007

    Abstract: MONTGOMERYVILLE
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1007 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • 30 MHz 50 VOLTS POUT = 150 WATTS GP = 14 dB MINIMUM COMMON EMITTER CONFIGURATION


    Original
    MS1007 MS1007 100mA 150WPEP 000MHz MONTGOMERYVILLE PDF

    Untitled

    Abstract: No abstract text available
    Text: MS1007 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features 30 MHz 50 VOLTS POUT = 150 WATTS GP = 14 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1007 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device


    Original
    MS1007 MS1007 150WPEP 000MHz 001MHz 100mA PDF

    Untitled

    Abstract: No abstract text available
    Text: MS1008 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • 30 MHz 50 VOLTS IMD = –30 dB POUT = 150 WATTS GP = 14 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1007 is a 50V epitaxial silicon NPN planar transistor


    Original
    MS1008 MS1007 150WPEP 000MHz 001MHz 100mA PDF

    M208

    Abstract: SD4590
    Text: SD4590 RF & MICROWAVE TRANSISTORS 800-960 MHz CELLULAR BASE STATION . . . . . GOLD METALLIZATION DIFFUSED EMITTER BALLASTING INTERNAL INPUT/OUTPUT MATCHING COMMON EMITTER CONFIGURATION DESIGNED FOR LINEAR OPERATION HIGH SATURATED POWER CAPABILITY 26 VOLT, 900 MHz PERFORMANCE


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    SD4590 -28dB SD4590 M208 PDF

    VK200-4B

    Abstract: diode 4937 J101 VRF151 0-12V 2204B MRF151
    Text: VRF151 PRELIMINARY 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original
    VRF151 175MHz VRF151 30MHz, 175MHz, MRF151 VK200-4B diode 4937 J101 0-12V 2204B MRF151 PDF

    VRF2933

    Abstract: 300WPEP 2204b ATC100B LM3905 SD2933 M177
    Text: VRF2933 PRELIMINARY 50V, 300W, 150MHz RF POWER VERTICAL MOSFET The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original
    VRF2933 150MHz VRF2933 30MHz, SD2933 300WPEP 2204b ATC100B LM3905 SD2933 M177 PDF

    Untitled

    Abstract: No abstract text available
    Text: VRF152E VRF152EMP 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152E is a thermally-enhanced version of the VRF152. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without


    Original
    VRF152E VRF152EMP 175MHz VRF152E VRF152. M174A 30MHz, 175MHz, SD2941-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: VRF141 VRF141MP 28V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF141 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original
    VRF141 VRF141MP 175MHz VRF141 30MHz, 175MHz, MRF141 PDF

    SD2941-10

    Abstract: 2204B VRF152 VRF152E BR 3050 VRF152EMP
    Text: VRF152E VRF152EMP 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF152E is a thermally-enhanced version of the VRF152. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without


    Original
    VRF152E VRF152EMP 175MHz VRF152E VRF152. M174A 30MHz, 175MHz, SD2941-10 SD2941-10 2204B VRF152 BR 3050 VRF152EMP PDF

    mrf 510

    Abstract: VK200-4B VRF150 60WV MRF 283 J101 0-12V 2204B Unelco j101
    Text: VRF150 PRELIMINARY 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation


    Original
    VRF150 150MHz VRF150 150MHz, 30MHz, mrf 510 VK200-4B 60WV MRF 283 J101 0-12V 2204B Unelco j101 PDF

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1008 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • • • • • • 30 MHz 50 VOLTS IMD = –30 dB POUT = 150 WATTS GP = 14 dB MINIMUM COMMON EMITTER CONFIGURATION


    Original
    MS1008 MS1007 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC2510 TO SHIBA 2 S C2 5 1 0 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm 2~30MHz SSB LINEAR PO W ER AM PLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Specified 28V, 28MHz Characteristics Output Power Po = 150WpEP (Min.) Power Gain Gp = 12.2dB (Min.)


    OCR Scan
    2SC2510 30MHz 28MHz 150WpEP 2-13B1A 100mA, 1S1555 961001EAA2' PDF

    E5OU

    Abstract: 2-13B1A Ferrite core TDK 2SC2510 50wv 10ID 1S1555
    Text: TOSHIBA 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS 28V SUPPLY VOLTAGE USE Unit in mm Specified 28V, 28MHz Characteristics Output Power Po = 150WpEP (Min.) Power Gain Gp = 12.2dB (Min.)


    OCR Scan
    2SC2510 30MHz 28MHz 150Wpep 000MHz 001MHz 100mA 961001EAA2' E5OU 2-13B1A Ferrite core TDK 2SC2510 50wv 10ID 1S1555 PDF

    2SC2510

    Abstract: Ferrite core TDK
    Text: TOSHIBA 2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE <;r i R1 n i 2-30M Hz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 28V SUPPLY VOLTAGE USE U nit in mm Specified 28V, 28MHz Characteristics Po = 150WpEp O utput Power Power Gain. G p= 12.2dB (Min.)


    OCR Scan
    2SC2510 2-30M 28MHz 150WpEp --30dB 1S1555 961001EAA2' 2SC2510 Ferrite core TDK PDF

    Ferrite core TDK

    Abstract: 2sc2510
    Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2 '30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. 28V SUPPLY VOLTAGE USE Unit in mm FEATURES: . Specified 28V, 28MHz Characteristics : Output Power : P o =150Wp e P : Minimum Gain : Gpe=12.2dB : Efficiency : ^c=35%(Min.)


    OCR Scan
    2SC2510 30MHz 28MHz 150Wp -30dB Tc-25 Po-150WpEp 2SC2510----------------- 150pF 1S1555 Ferrite core TDK 2sc2510 PDF

    80703

    Abstract: 80502
    Text: May 1992 Edition 1.1 FUJITSU DATA SHEET / MB98A8040X- / 8050x- 8060x- / 8070x-30 EEPROM MEMORY CARD ELECTRICALLY ERASABLE PROGRAMMABLE READ ONLY MEMORY CARD 16K /3 2 K /6 4 K /1 2 8 K -B Y T E The Fujitsu MB98A8040x, MB98A8050x, MB98A8060x and MB98A8070x are


    OCR Scan
    MB98A8040X- 8050x- 8060x- 8070x-30 MB98A8040x, MB98A8050x, MB98A8060x MB98A8070x 68-pin 16-bit 80703 80502 PDF