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    152N10NS Price and Stock

    Rochester Electronics LLC BSC152N10NSFG

    N-CHANNEL POWER MOSFET
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    DigiKey BSC152N10NSFG Bulk 247
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    Infineon Technologies AG BSC152N10NSFGATMA1

    MOSFET N-CH 100V 9.4A/63A TDSON
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    DigiKey BSC152N10NSFGATMA1 Reel
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    Infineon Technologies AG BSC152N10NSFG

    BSC152N10 - Power Field-Effect Transistor, 9.4A, 100V, 0.0152ohm, N-Channel, MOSFET '
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    Rochester Electronics BSC152N10NSFG 17,576 1
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    152N10NS Datasheets Context Search

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    BSC152N10NSF

    Abstract: IEC61249-2-21 JESD22
    Text: 152N10NSF G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • Very low gate charge for high frequency applications R DS on ,max 15.2 mΩ • Optimized for dc-dc conversion ID • N-channel, normal level 63 A PG-TDSON-8 • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF BSC152N10NSF IEC61249-2-21 152N10NS IEC61249-2-21 JESD22

    BSC152N10NSF

    Abstract: JESD22
    Text: 152N10NSF G OptiMOS 2 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 15.2 mΩ ID 63 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF BSC152N10NSF 152N10NS JESD22

    Untitled

    Abstract: No abstract text available
    Text: 152N10NSF G OptiMOS 2 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 15.2 mΩ ID 63 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)


    Original     		PDF BSC152N10NSF 152N10NS