Untitled
Abstract: No abstract text available
Text: P200 -18/Ud STP210 - 18/Ud STP190 - 18/Ud 210 Watt Maximum Power SOLAR PANEL Features • High conversion efficiency based on leading innovative photovoltaic technologies • High reliability with guaranteed +/-3% power output tolerance, ensuring return on investment
|
Original
|
-18/Ud
STP210
18/Ud
STP190
18/Ud
25-year
IEC61215,
IEC61730,
000W/m2
00W/m2
|
PDF
|
LH 1560
Abstract: st 0560 032X0 MSM10R
Text: ClkSkew0_5.ANcov Page 1 Tuesday, October 10, 1995 5:43 PM APPLICATION NOTE O K I A S I C P R O D U C T S 0.5µm Technology Clock Skew Management October 1994 ClkSkew0_5.ANbod Page 1 Tuesday, October 10, 1995 5:43 PM –––––––––––––––––––––––––––––––––––––––––––––––––– • 0.5µ m Technology Clock Skew Management ■
|
Original
|
tpLH-WDR2140
LH 1560
st 0560
032X0
MSM10R
|
PDF
|
BUZ32
Abstract: T-39
Text: 30E » 7=55^37 0030124 T • S w # S G S -T H O M S O N S-THOMSON G BUZ32 CHIP k 7 # [iD [S o [i[L[i(giriE(Q)iio(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Al Back A u /C r/N i/A u BACKSIDE THICKNESS:
|
OCR Scan
|
Q03Q12M
BUZ32
156x156
15x19
MC-0074
19TERISTICS
T-39
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3QE D • 7^5^537 SCS-THOMSON 00301SM EILKgMMtgS T ■ s 6 s-fHonioN BUZ32 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Al Back A u /C r/N i/A u BACKSIDE THICKNESS: 6100 A DIETHICKNESS: 16 ± 2 mils
|
OCR Scan
|
00301SM
BUZ32
156x156
15x19
|
PDF
|
PVAPOX
Abstract: No abstract text available
Text: /=T SGS-THOMSON ^7#» ÄMILtKgTOOMlgi BUZ11A CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source Gate
|
OCR Scan
|
BUZ11A
156x156
MC-0074
PVAPOX
|
PDF
|
buz21
Abstract: transistor 643
Text: I • 71S1237 7 7 SG S-1H 0M S0N _ 3 0 E V # I , I QQ3D12S fa _ 6 S^THOMSON S BUZ21 CHIP [^D g^(Q [i[Lll ir^©iOgl _ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils
|
OCR Scan
|
BUZ21
156x156
15x19
MC-0074
transistor 643
|
PDF
|
Untitled
Abstract: No abstract text available
Text: /= T SGS-THOMSON MD g[s] [ilLI(gre©iD(gi IRF730 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE: Source
|
OCR Scan
|
IRF730
156x156
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SGS-THOMSON ilLiraMOIgi BUZ32 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:
|
OCR Scan
|
BUZ32
156x156
15x19
|
PDF
|
Untitled
Abstract: No abstract text available
Text: /= T SGS-THOMSON * 7 # . iMnaoiiLiCTisiMnei_ BUZ11A c h ip N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al A u /C r/N i/A u BACKSIDE THICKNESS: DIE THICKNESS: PASSIVATION: BONDING PAD SIZE:
|
OCR Scan
|
BUZ11A
156x156
C-0071.
19source
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3 GE » _ _ • 7 = 1 2 ^ 2 3 7 Ü03D120 2 ■ [ Z J S GS-THOMSON 'T '-3 ,C M > 6 s-thomson/ [^D(g^(Q)g[Lg(g¥^(Q)^D S_ BUZ11A CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Back Al
|
OCR Scan
|
03D120
BUZ11A
156x156
|
PDF
|
ic 74151
Abstract: 82C54 oki oki 82c54 oki cross MSM92RB01 msm 32X32 oki msm32
Text: O K I Semiconductor MSM30R0000/MSM32R0000/MSM92R000 Second-Generation 0.5|xm Sea of Gates and Customer Structured Arrays D E SC R IP TIO N Oki's second-generation 0.5|am ASIC products are available in b oth Sea Of Gates SOG and Custom er Structured Array (CSA) architectures. The M SM 30R Series, M SM 32R Series, and M SM 92R Series all offer
|
OCR Scan
|
MSM30R0000/MSM32R0000/MSM92R000
MSM30R
MSM32R
MSM92R
semiconduc104x104
92R108X108
ic 74151
82C54 oki
oki 82c54
oki cross
MSM92RB01
msm 32X32
oki msm32
|
PDF
|
30r0080
Abstract: PQFP 32X32 MSM ARRAY
Text: O K I Semiconductor MSM30R0000/MSM32R0000/MSM92R000 Second-Generation 0.5|im Sea of Gates and Customer Structured Arrays DESCRIPTION Oki's second-generation 0.5|im ASIC products are available in b oth Sea Of Gates SOG and Custom er Structured Array (CSA) architectures. The M SM 30R Series, M SM 32R Series, and M SM 92R Series all offer
|
OCR Scan
|
MSM30R0000/MSM32R0000/MSM92R000
28x28
32x32
40x40
30r0080
PQFP 32X32
MSM ARRAY
|
PDF
|
