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Fluke Corporation P3115-MPA OIL DEADWEIGHT TESTER 110 MPA
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Fluke Corporation P3015-MPA GAS DEADWEIGHT TESTER 3.5 MPA NO
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TestEquity LLC	P3015-MPA					1 $14795.21 10 $14795.21 100 $14795.21 1000 $14795.21 10000 $14795.21	Buy Now
Fluke Corporation CWS3115-MPA CONVERSION WEIGHT SET P3115 MPA
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DigiKey	CWS3115-MPA	Bulk			1	1 $7787.45 10 $7787.45 100 $7787.45 1000 $7787.45 10000 $7787.45	Buy Now
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Newark	CWS3115-MPA	Bulk			1	1 $7787.4 10 $7787.4 100 $7787.4 1000 $7787.4 10000 $7787.4	Buy Now
TestEquity LLC	CWS3115-MPA					1 $7399.93 10 $7399.93 100 $7399.93 1000 $7399.93 10000 $7399.93	Buy Now
Fluke Corporation P3015-MPA-P GAS DEADWEIGHT TESTER 3.5 MPA W/
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DigiKey	P3015-MPA-P	Bulk			1	1 $15708.5 10 $15708.5 100 $15708.5 1000 $15708.5 10000 $15708.5	Buy Now
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TestEquity LLC	P3015-MPA-P					1 $15351.7 10 $15351.7 100 $15351.7 1000 $15351.7 10000 $15351.7	Buy Now
Fluke Corporation CWS3015-MPA CONVERSION WEIGHT SET P3015 MPA
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Mouser Electronics	CWS3015-MPA					1 $5242.42 10 $5242.42 100 $5242.42 1000 $5242.42 10000 $5242.42	Get Quote
TestEquity LLC	CWS3015-MPA					1 $5085.15 10 $5085.15 100 $5085.15 1000 $5085.15 10000 $5085.15	Buy Now

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15MPA Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
15MPA0566		Mimix Broadband	11.0-19.0 GHz GaAs MMIC Power Amplifier		Original	PDF

15MPA Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
15MPA0566 Abstract: 84-1LMI Text: 11.0-19.0 GHz GaAs MMIC Power Amplifier 15MPA0566 September 2005 - Rev 01-Sep-05 Features Chip Device Layout tio n Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883	Original	PDF	15MPA0566 01-Sep-05 MIL-STD-883 15MPA0566 84-1LMI
transistor smd qe Abstract: 15MPA0566-QE Text: 11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN 15MPA0566-QE August 2006 - Rev 22-Aug-06 Features 17.0 dB Small Signal Gain +27.0 dBm Saturated Output Power SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing Chip Device Layout General Description	Original	PDF	22-Aug-06 15MPA0566-QE Millim66-QE-EV1 transistor smd qe
OC 74 germanium transistor Abstract: P1020 15MPA0566 DM6030HK TS3332LD XP1020-BD XP1020-BD-000V power transistor gaas Text: 11.0-19.0 GHz GaAs MMIC Power Amplifier P1020-BD January 2007 - Rev 30-Jan-07 Features Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010	Original	PDF	P1020-BD 30-Jan-07 MIL-STD-883 XP1020-BD XP1020-BD-000V XP1020-BD-EV1 XP1020-BD OC 74 germanium transistor P1020 15MPA0566 DM6030HK TS3332LD XP1020-BD-000V power transistor gaas
transistor smd qe Abstract: P1020 15MPA0566 CMM1118-QT XP1020-QE XP1020-QE-0N00 XP1020-QE-EV1 XU1005-QD Text: 11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN P1020-QE January 2007 - Rev 26-Jan-07 Features 17.0 dB Small Signal Gain +27.0 dBm Saturated Output Power SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband’s two stage 11.0-19.0 GHz GaAs	Original	PDF	P1020-QE 26-Jan-07 XP1020-QE-0N00 XP1020-QE-EV1 XP1020-QE transistor smd qe P1020 15MPA0566 CMM1118-QT XP1020-QE-0N00 XP1020-QE-EV1 XU1005-QD
Untitled Abstract: No abstract text available Text: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD January 2009 - Rev 29-Jan-09 Features 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power +48.0 dBm Output Third Order Intercept	Original	PDF	29-Jan-09 P1057-BD MIL-STD-883 anD-000V XP1057-BD-EV1 XP1057-BD
ISE70-F02-65 Abstract: ZSE40F-01-22L str 12006 ISE40-01-62 ZSE30-01-65-L ISE40-01-62L ISE40-01-22L ISE30-01-65-L ISE30-01-28 ISE70-F02-43 Text: EMC-L1-Sensor A -UK Advanced Sensors For Accurate Effective Control SMC Pressure & & Flow sensors SMC Pressure Flow sensors ZSE/ISE Series -Pressure Switch PSE Series -Pressure Sensors PF2 Series -Flow Sensors Why use Digital Pressure and Flow Sensors? Digital Sensors have excellent visibility even	Original	PDF	32MPa 325MPa ISE70-F02-65 ZSE40F-01-22L str 12006 ISE40-01-62 ZSE30-01-65-L ISE40-01-62L ISE40-01-22L ISE30-01-65-L ISE30-01-28 ISE70-F02-43
BD 669 Abstract: transistor BD 140 BD 149 transistor XB1008-BD XB1008-BD-000V XB1008-BD-EV1 DM6030HK TS3332LD Text: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD September 2007 - Rev 17-Sep-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 18.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 5.5 dB Noise Figure Variable Gain with Adjustable Bias	Original	PDF	B1008-BD 17-Sep-07 MIL-STD-883 XB1008-BD-000V XB1008-BD-EV1 XB1008 BD 669 transistor BD 140 BD 149 transistor XB1008-BD XB1008-BD-000V XB1008-BD-EV1 DM6030HK TS3332LD
"4-20mA" ic Abstract: ZL102 4-20ma hart ic Text: BFP01 压力变送器概述：概述压力变送器采用了具有世界先进水平的硅传感器技术，微细加工成的硅膜片技术以及不锈钢膜片技术，激光微调的温度补尝电阻技术，电路采用了专用集成电路，变送器的体积小，结构简单，可	Original	PDF	BFP01 420mADC 02100KPa 035KPa -4012502100KPa -4010002100KPa ZL102 1Cr18Ni9Ti 420mA "4-20mA" ic ZL102 4-20ma hart ic
SCL 8018 Abstract: DM6030HK TS3332LD XB1008-BD XB1008-BD-000V XB1008-BD-EV1 transistor 7809 Text: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD March 2007 - Rev 06-Mar-07 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 18.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 5.5 dB Noise Figure 100% On-Wafer RF, DC and Output Power Testing	Original	PDF	B1008-BD 06-Mar-07 MIL-STD-883 XB1008-BD-000V XB1008-BD-EV1 XB1008 SCL 8018 DM6030HK TS3332LD XB1008-BD XB1008-BD-000V XB1008-BD-EV1 transistor 7809
XP1057-BD Abstract: DM6030HK XP1057 Text: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD January 2010 - Rev 04-Jan-10 Features Chip Device Layout 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power +48.0 dBm Output Third Order Intercept	Original	PDF	P1057-BD 04-Jan-10 MIL-STD-883 XP1057-BD unifor057-BD-EV1 XP1057-BD DM6030HK XP1057
DM6030HK Abstract: TS3332LD XB1008-BD XB1008-BD-000V XB1008-BD-EV1 Text: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD October 2009 - Rev 10-Oct-09 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 18.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 5.5 dB Noise Figure Variable Gain with Adjustable Bias	Original	PDF	B1008-BD 10-Oct-09 Mil-Std-883 XB1008 DM6030HK TS3332LD XB1008-BD XB1008-BD-000V XB1008-BD-EV1
CY-YD-200A Abstract: No abstract text available Text: SINOCERA CY-YD-200A 水冷式石英压力传感器特点：水冷型汽缸管道压力测量可静态标定 M14x1.25 标准安装螺纹示意图 OUT 技术指标：～20PC/105Pa 0～15MPa 150% ＜1%FS ＜1%FS ＜1%FS ＞1013Ω 7Pf 37	Original	PDF	CY-YD-200A 20PC/105Pa 015MPa 1000Hz /105Pa CY-YD-200A
Untitled Abstract: No abstract text available Text: TECHNICAL DATA SHEET Document number: TTDS-017 D-SCE heat-shrinkable sleeves Issue: 5 Date: November 2011 MATERIAL DESCRIPTION: Thin wall, thermally-stabilised radiation cross-linked polyolefin heat-shrinkable tubing, assembled as organized cut sleeves in a “ladder” configuration.	Original	PDF	TTDS-017
14522 Abstract: DM6030HK Text: 14.5-16.0 GHz GaAs MMIC Power Amplifier P1058-BD August 2010 - Rev 26-Aug-10 Features Chip Device Layout 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +38.0 dBm Pulsed Saturated Output Power +46.0 dBm Output Third Order Intercept	Original	PDF	P1058-BD 26-Aug-10 MIL-STD-883 surf058-BD-EV1 XP1058-BD 14522 DM6030HK

Untitled Abstract: No abstract text available Text: 14.5-16.0 GHz GaAs MMIC Power Amplifier P1058-BD February 2009 - Rev 02-Feb-09 Features 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power +38.0 dBm Pulsed Saturated Output Power	Original	PDF	02-Feb-09 P1058-BD MIL-STD-883 aD-000V XP1058-BD-EV1 XP1058-BD
XP1070-BD Abstract: P1070-BD MMIC 5043 DM6030HK 10W Power Amplifier XP1070 OC 140 germanium transistor Text: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1070-BD January 2010 - Rev 04-Jan-10 Features Chip Device Layout 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +38.5 dBm P1dB Compression Point +40.0 dBm Pulsed Saturated Output Power +46.0 dBm Output Third Order Intercept	Original	PDF	P1070-BD 04-Jan-10 MIL-STD-883 XP1070-BD 070-BD-EV1 XP1070-BD P1070-BD MMIC 5043 DM6030HK 10W Power Amplifier XP1070 OC 140 germanium transistor
Untitled Abstract: No abstract text available Text: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1070-BD March 2009 - Rev 07-Mar-09 Features Chip Device Layout 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power +48.0 dBm Output Third Order Intercept	Original	PDF	P1070-BD 07-Mar-09 MIL-STD-883 rP1070-BD-EV1 XP1070-BD
tanaka TS3332LD Abstract: DM6030HK TS3332LD XB1008-BD XB1008-BD-000V XB1008-BD-EV1 Text: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier B1008-BD November 2010 - Rev 11-Nov-10 Features Chip Device Layout Excellent Transmit LO/Output Buffer Stage Compact Size 18.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 5.5 dB Noise Figure Variable Gain with Adjustable Bias	Original	PDF	B1008-BD 11-Nov-10 Mil-Std-883 XB1008 tanaka TS3332LD DM6030HK TS3332LD XB1008-BD XB1008-BD-000V XB1008-BD-EV1
ISO1179 Abstract: ISO1179-1 ISE75H ISE75 ISE70 axion Text: CAT.ES100-52 A -UK 2-colour Display Type Digital Pressure Switch Rated Pressure For General Fluids Series ISE70/75/75H Die-cast aluminum 10MPa •15MPa 1MPa 2-colour (ISE75) For Air Metal Body Type (ISE75H) (ISE70) IP67 digital 2-colour Display (green and red)	Original	PDF	ES100-52 ISE70/75/75H 10MPa 15MPa ISE75) ISE75H) ISE70) ISO1179 ISO1179-1 ISE75H ISE75 ISE70 axion
XB1008-BD Abstract: XB1008-BD-000V XB1008-BD-EV1 Text: XB1008-BD Buffer Amplifier 10.0-21.0 GHz Rev. V1 Features Chip Device Layout •        Excellent Transmit LO/Output Buffer Stage Compact Size 18.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 5.5 dB Noise Figure Variable Gain with Adjustable Bias	Original	PDF	XB1008-BD Mil-Std-883 XB1008-BD XB1008-BD-000V XB1008-BD-EV1
Untitled Abstract: No abstract text available Text: 13.5-16.0 GHz GaAs MMIC Power Amplifier P1057-BD April 2009 - Rev 18-Apr-09 Features 10W Power Amplifier Dual Sided Bias Architecture 17 dB Small Signal Gain +39.0 dBm P1dB Compression Point +41.0 dBm Pulsed Saturated Output Power +48.0 dBm Output Third Order Intercept	Original	PDF	P1057-BD 18-Apr-09 MIL-STD-883 XP1057-BD-EV1 XP1057-BD
GB3836 Abstract: 15Mpa cd266 Text: LUGB 型涡街流量传感器变送器类型：流量传感器、变送器工作原理利用柱状阻力体在流体下游方向交替产生的旋涡，在柱体两侧产生旋涡时，传感器受到与流向垂直的交变升力的作用感生信号，升力的变化频率就是旋涡频率，传感器将信号	Original	PDF	420mA GB3836 10Mpa 15Mpa 25Mpa 42Mpa 2300Hz 24VDC cd266
Untitled Abstract: No abstract text available Text: 11.0-19.0 GHz GaAs MMIC Power Amplifier P1020-BD January 2007 - Rev 30-Jan-07 Features Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010	Original	PDF	P1020-BD 30-Jan-07 MIL-STD-883 XP1020-BD XP1020-BD-000V XP1020-BD-EV1 XP1020-BD
XP1071-BD-EV1 Abstract: No abstract text available Text: 14.5-17.0 GHz GaAs MMIC Power Amplifier P1071-BD March 2009 - Rev 06-Mar-09 Features Chip Device Layout 5W Power Amplifier Dual Sided Bias Architecture 27.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +37.0 dBm Saturated Output Power +38.0 dBm Pulsed Saturated Output Power	Original	PDF	P1071-BD 06-Mar-09 MIL-STD-883 XP1071-BD-EV1 XP1071-BD XP1071-BD-EV1

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15MPA Datasheets (1)

15MPA Datasheets Context Search

15MPA0566

transistor smd qe

OC 74 germanium transistor

transistor smd qe

Untitled

ISE70-F02-65

BD 669

"4-20mA" ic

SCL 8018

XP1057-BD

DM6030HK

CY-YD-200A

Untitled

14522

Untitled

XP1070-BD

Untitled

tanaka TS3332LD

ISO1179

XB1008-BD

Untitled

GB3836

Untitled

XP1071-BD-EV1