BFG67
Abstract: No abstract text available
Text: BFG67 Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 2 Small feedback capacitance Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 1 4
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BFG67
2002/95/EC
2002/96/EC
OT-143
08-Apr-05
BFG67
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SFH6711-X007
Abstract: SFH6712 SFH6700 SFH6701 SFH6705
Text: SFH6700/ 01/ 02/ 05/ 11/ 12/ 19 Vishay Semiconductors High Speed Optocoupler, 5 MBd, 1 kV/µs dV/dt Features • Data Rate 5.0 MBits/s 2.5 MBit/s over Temperature • Buffer e3 • Isolation Test Voltage, 5300 V RMS for 1.0 s • TTL, LSTTL and CMOS Compatible
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SFH6700/
SFH6701/
SFH6705)
2002/95/EC
2002/96/EC
SFH6700/6719
SFH6701/6711
08-Apr-05
SFH6711-X007
SFH6712
SFH6700
SFH6701
SFH6705
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Untitled
Abstract: No abstract text available
Text: BF995 Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance
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BF995
2002/95/EC
2002/96/EC
OT-143
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: BF996S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance Low input capacitance
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BF996S
2002/95/EC
2002/96/EC
OT-143
08-Apr-05
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85555
Abstract: No abstract text available
Text: BB814 Vishay Semiconductors Dual Varicap Diode Features • • • • Silicon Epitaxial Planar Diode Common cathode Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 e3 1 2 18108 Applications Tuning of separate resonant circuits,
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BB814
2002/95/EC
2002/96/EC
OT-23
BB814
BB814-1
BB814-2
BB814-GS18
BB814-GS08
BB814-1-GS18
85555
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Si7868ADP
Abstract: Si7868ADP-T1-E3 Si7868DP Si7868DP-T1 Si7868DP-T1-E3
Text: Specification Comparison Vishay Siliconix Si7868ADP vs. Si7868DP Description: Package: Pin Out: N-Channel, 20-V D-S MOSFET PowerPAK SO-8 Identical Part Number Replacements: Si7868ADP-T1-E3 Replaces Si7868DP-T1-E3 Si7868ADP-T1-E3 Replaces Si7868DP-T1 Summary of Performance:
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Si7868ADP
Si7868DP
Si7868ADP-T1-E3
Si7868DP-T1-E3
Si7868DP-T1
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BAR63V-03
Abstract: BAR63V-03-GS08 BAR63V-03-GS18
Text: BAR63V-03 Vishay Semiconductors RF PIN Diode - Single in SOT-23 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03 was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-03
OT-23
BAR63V-03
2002/95/EC
2002/96/EC
18-Jul-08
BAR63V-03-GS08
BAR63V-03-GS18
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BAR64V-04W
Abstract: BAR64V-04W-GS08 BAR64V-04W-GS18 BYT41A BYT41M
Text: BAR64V-04W Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-04W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be
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BAR64V-04W
OT-323
BAR64V-04W
OT-323
18-Jul-08
BAR64V-04W-GS08
BAR64V-04W-GS18
BYT41A
BYT41M
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Untitled
Abstract: No abstract text available
Text: BAR64V-04W Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-04W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be
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BAR64V-04W
OT-323
BAR64V-04W
2002/95/EC
2002/96/EC
D-74025
15-Apr-05
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BFP92
Abstract: No abstract text available
Text: BFP92A / BFP92AW Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 2 High power gain Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 1 SOT-143
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BFP92A
BFP92AW
2002/95/EC
2002/96/EC
OT-143
OT-343
OT-143
BFP92AW
OT-343
BFP92
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Untitled
Abstract: No abstract text available
Text: BAR63V-03W Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-03W
OT-323
BAR63V-03W
2002/95/EC
2002/96/EC
OT-323
D-74025
15-Apr-05
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18342
Abstract: No abstract text available
Text: BAR64V-06W Vishay Semiconductors RF PIN Diodes - Dual, Common Anode in SOT-323 Description 2 Characterized by low reverse Capacitance the PIN Diodes BAR64V-06W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be
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BAR64V-06W
OT-323
BAR64V-06W
2002/95/EC
2002/96/EC
D-74025
15-Apr-05
18342
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Untitled
Abstract: No abstract text available
Text: BAR63V-04W Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-04W
OT-323
BAR63V-04W
2002/95/EC
2002/96/EC
OT-323
D-74025
15-Apr-05
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BAT54S-HT3
Abstract: No abstract text available
Text: BAT54-HT3 to BAT54S-HT3 Vishay Semiconductors Small Signal Schottky Diodes, Single & Dual Features Top view • These diodes feature very low turn-on voltage and fast switching. e3 • These devices are protected by a PN junction guard ring against excessive
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BAT54-HT3
BAT54S-HT3
2002/95/EC
2002/96/EC
BAT54-HT3
BAT54A-HT3
BAT54C-HT3
LLP75-3B
D-74025
BAT54S-HT3
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TO50 package
Abstract: BF966 BF966S
Text: BF966S Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 3 Features • • • • • • • • 4 Integrated gate protection diodes High cross modulation performance e3 Low noise figure High AGC-range Low feedback capacitance
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BF966S
2002/95/EC
2002/96/EC
BF966S
BF966SA
BF966SB
BF966d
D-74025
TO50 package
BF966
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Untitled
Abstract: No abstract text available
Text: BAR63V-06W Vishay Semiconductors RF PIN Diodes - Dual, Common Anode in SOT-323 Description 2 Characterized by a very low reverse Capacitance the PIN Diode BAR63V-06W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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BAR63V-06W
OT-323
BAR63V-06W
2002/95/EC
2002/96/EC
OT-323
D-74025
15-Apr-05
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marking v3
Abstract: No abstract text available
Text: BFG67 Vishay Semiconductors Silicon NPN Planar RF Transistor Features • • • • • 2 Small feedback capacitance Low noise figure e3 High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 1 4
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BFG67
2002/95/EC
2002/96/EC
OT-143
D-74025
15-Apr-05
marking v3
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BF998B-GS08
Abstract: NATIONAL SEMICONDUCTOR MARKING CODE sot-143 sot143 code marking MS BF998A BF998A-GS08 BF998 VISHAY application BF998 BF998RAW-GS08
Text: BF998 / BF998R / BF998RW Vishay Semiconductors N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode 2 1 Features • • • • • • • • • SOT-143 Integrated gate protection diodes Low noise figure e3 Low feedback capacitance High cross modulation performance
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BF998
BF998R
BF998RW
2002/95/EC
2002/96/EC
OT-143
OT-143R
OT-343R
OT-143
BF998B-GS08
NATIONAL SEMICONDUCTOR MARKING CODE sot-143
sot143 code marking MS
BF998A
BF998A-GS08
BF998 VISHAY
application BF998
BF998RAW-GS08
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Honeywell v3
Abstract: FAA-PMA panel toggle switch honeywell NTS 10 7AT41
Text: F O - 5 5 1 1 1 -A HONEYWELL PART NUMBER REV 10 DOCUMENT 0012581 CHANGED SPK BY CHECK 15APR05 AK 7AT41 • 4 7 P I A . HOLE IN C U S T O M E R 'S MTG. P A N E L R E C O M M E N D E D FOR F L U S H P A N E L M O UNTING. re f 4 - 4 0 NC X .125 ±.OÇO 1.50 B
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15APR05
7AT41
FORCE-------------------------16
HP-125
1/2A-125
1/4A-250
47dia.
7AT41
05AUG58
Honeywell v3
FAA-PMA panel
toggle switch honeywell
NTS 10
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. G DIST R E V IS IO N S 02 LTR DESCRIPTION REV PER 0G3A— 0 2 1 0 — 05 DATE DWN APVD 15APR05 JR TM D WIRE 19 .8 MAX 6.3 RANGE INSULATION
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15APR05
1G55GG
15APR05
15WEIGHT
31MAR2000
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. G DIST R E V IS IO N S 02 LTR H DESCRIPTION REV PER 0 G 3 A — 0 2 1 0 — 0 5 DATE DWN APVD 15APR05 JR TM D WIRE RANGE 19.8 MAX 6.3
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15APR05
g-165563-g
1655G3
15APR05
31MAR20Q0
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PLC 6
Abstract: 165565-2
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOG ALL RIGHTS RESERVED. G DIST R E V IS IO N S 02 LTR M DESCRIPTION REV PER 0 G 3 A — 0 2 1 0 — 0 5 DATE OWN APVD 15APR05 JR TM D WIRE RANGE INSULATION
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15APR05
165ZE
15APR05
31MAR2000
PLC 6
165565-2
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Untitled
Abstract: No abstract text available
Text: T H IS D R A W IN G S U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - .- REVISIO N S RESERVED. G - o: LTR M2 D E S C R IP T IO N R EVISED PER DATE ECO-11-004820 WIRE 0 .3 - 1 .5 NSULATION AWG .1 4 0 mm2 3.5 A PVD
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IMAR11
15APR05
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. COPYRIGHT LOC ALL RIGHTS RESERVED. DIST R E V IS IO N S GP 00 LTR B DESCRIPTION REV PER ECO—06—01 901 0 DATE DWN APVD 17AUG06 TK DO 7 MDDULE INFDRMATIDN NDTESi 1, U N L E S S OTHERWISE SPEC IF IE D.
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17AUG06
15APR05
31MAR2000
03MAY05
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